QUAID-|-AZAM UNIVERSITY
(DEPARIMENT OF PHYSICS)
LABORATORY
TRANSISTOR CHARACIERISTICS AND PARAMETERS
HINTS ON SOLLDERING
General:
1.
Keep the point, of [Link] iron
clean and wel1 [Link].
2. Before making the joint., tin the
ends of any wires that are
t.o be soldered.
3.
Apply the point of the iron to the
ioint and allow enough time
for the joint. to warm un
before app1ying the solder, So that.
on contact. wit.h the joint.
the solder runs free1y.
4. Do not. use [Link] iron for
carrying the so1der to the joint.
SOLDERING TRANSISTORS:
[Link] devices can be damaged by the heat from the iron
which is conducted up their leads, so that use of a
heat sink
is advisable. This is easily provided by
holding the lead wire
between the transistor and the point. being soldered with a
pair of longnosed pliers.
Note: The [Link] asked in [Link] instruction sheet are t.o be
answered in your lab report, using the data you have [Link].
INTRODUCTION:
The ability of a [Link] to conduct. electrical charae depends on
the number of carriers that. are present in the materia1. In a good
[Link] such as copper, a very large number of 'free? [Link]
are present. and act. as carriers, but in an insulator, the number of
free eiectrons is very smal. Pure semiconductor materials are
[Link] conductors of electrical charge than [Link], but. they
are poorer conductors than materials such as copper and aluminium.
The solid [Link].e diodes and transistor are devices constructed from
semiconductor [Link] such as germanuim Or silicon. [Link]
are added to [Link] [Link] material ("doping",) to increase
the number of carriers of a given sign. If the [Link] provide
negative electrons t.o act. as majority carriers, the [Link] is
called N-type. If the impurity that is added produces a deficíency
charge of
of an electron in the crystal structure, the effective
called
the carrier is equivalent to a positive charge (+e), and 1s
ahole. The material is called p-type. When a P-type materia1 forms
potent.ía1
a junction with an N-type material, as shown in Fig.1, a
barrier is formed at the junction. The device acts diode,
offering an easy passage to current in one dírection, and having
very high resistance in the other.
The transistor shown in Fig.2. consists of two PN junctions and has
the base and
three terminals that are designated as the emitter,
the collector. When the AVO meter, on the resistance (Rx 100) range
is connected between the base and emitter terminais, a high or Jow
of Current flow.
resistance is found, according to the direction
Similariy, diode action is present between collector and basSe.
Easy Current flowW
Fig.1
EXPERIMENT
Take transistor, and measure the forward and reverse
any
resistances between its terminals on the R x 100 range. Do not Use
LOwer Range.
PNP Transístor
N P
Emitter lao1iector
Base
N
Emitter’
Base
Holes .(Majority carríers ]electrons
QUESTION 1:
Does the transistor show diode action between all three leads?
Question 2:
Couid the AVO meter be Used to locate the emitter and
base,
collector of a transistor?
Fig.2. also shows the transistor symbo Ts used in circuit diagrams.
Each transistor has an identification number such as 2N40. wnich
enables it. to be located in manuals or catalogues.
Identification:
The type of transistor and its rating i.e. the CUrrent and
frequency range for which it is suitable Can be found from the
transistor [Link] or from data sheet.s, provided the identifi
cation number is known. Sometimes the numbers are not visible, or
data is unavai lable; in Such cases, Some infornat ion can be
ohtained using the resistance range of the AVO meter Viz:
3
Arough
a)
classificati on can be made according to the forward
[Link] of the base-emitter diode.
For smal]
transistors which handle Currents of the order of
milliamps, this may be expected to be of the order of 10 ohms. For
nower [Link], which handie up to
few amps, values below 100
ohm may be found.
b) The resistance (R x 100) range of the AVO Can be used to
distinguish between PNP and NPN transistors. Resistance measure
ment with an AVO depends on an internal [Link]. If the bat:terY is
connected across a PN junction, a low resistance value wil1 be
indicated if the p0sitive pole is connected to the P-type mat.er1al.
Experiment.:
1.
Determine the polarity of the internal battery of the AVO
meter. Fig. (a bel ow).
2. Take any five tranistors. and for each one measure the
forward
and reverse resistance between al1 the Teads,
using the R X 100,
range.
3. Select the PNP transistors for further measurements.
4. Check your [Link] from the catalogue.
Question:
Why is the RX 100 range specified for the resistance measurements?
Fig. (a)
[Link] or another AVO [Link] on the
voltage range
AVO meter
To determine the polarity of the internal [Link] of the AVO meter
on a given resistance range
Fig f:
circuit. Connections:
made un of two fP [Link]
The [Link] has heen seen t.o be
in a
these diodes are biased
diodes. In [Link] the [Link], them in a
established across
specific manner i.e. [Link] is
partiGular sense.
and. base is forward biaSed 1.e.
Formaly, the diode between emitter
dioa
current. flOW. and the hase collector
in the [Link] of easy
against. the [Link] of easy
urrent. flow.
is reverse biased i.e. ofbase to
emitter to + and
In PNP [Link], [Link] the the
while [Link]
[Link], forward biases the e-b [Link];
base, biases
respect to
co1lector to a [Link] voltage with
reverse sense.
base [Link] junction in a t.O that.
opposite
sense of voltages is
For an NPN transistor, the
for the PNP transistor.
e.g. amplifiers,
transistors are used in varioUs applications,
Wnen
at "grond" or zero [Link]. ial. This
terminals is fixed
one of the
the vol tagas
input and [Link]. sides, and
terminal is common to both
common terminal
are compared to this
ofinput. and [Link]. terminas
w.r.t.. base.
is emitter [Link]
e.g. VEa junction is the
Common-base arrangement., e.g. the [Link]-base
In a
[Link] base is the Output..
input. side, while the col
"Common Base" confiau
Fig.3, the transistor is connected in the
In
[Link]. is the CoMmon
used [Link] [Link]
The Ost [Link]
shown in Fig.4.
emitter configuration as
[Link]:
transistor.
to Fig.4 for an NPN
Draw the circuit. corresponding
[Link] 5:
[Link] so ca1led?
Why is the Common [Link]
5
Ve constea
PNP NPN
Ve
Common base [Link] (Fig.3)
Vee
Fig.4. Common Emitter connection PNP transistor.
Collector Curvent
base curent
50
33kn
tqv
VBE Potentio
-mete
Potentio
meter f (m)
Circuit. ground
Fig.5:
Circuit. diagram for drawing the characterist. ic CUrves of PNP
[Link]. The ground termina of the VTVM should always be
connected to the circuit. greund, i.e. the Gommon terminai.
Current. Gain:
The useFulness of the trans istor as a device stems 1argeiy from the
fact that the amount. of current I, in the colinct.o"ireuit (output.
current.) is contro1led by the amount of Curtent 'R i the base
6
circuit. (input. current).
the bas resistor
Thus when I, is increased by changing the si ze of
Raiasi Wi11 also increase.
Current Gain ß is defined as the ratio:
Change in Output. Current. /1,
3=Change in Input. Current
because
The parameter B is called the "short circuit current gain
base does not. contain a resistor.
the output circuit, viz col [Link]
an alternat. ive symbol for B is he
Experiment:
Fig.5 using the PNP transistor.
1. Wire the circuit. as shown in
for the
2. : plot I, against
[Link] I, by means of R,
will be the slope of the 1ine, so
range I, 0-50 Ma and deduce B. (B
[Link])
this range?
Question 6: Is B roughly constant over a finite
cirucit), does I have
[Link] 7: When I,=0 (base open
value?
in
Compare the values of B (he) [Link] with those quoted
3
transistor type-used.
the catalogue for the
Leakage Current:
the transistor when ( no
The current fiowing through
and is due
leakage current Ico
Connection to base). is called the
minority carriers.
to the movement. of
Experiment:
transistor.
Current for each PNP:
Determine the leakage
Question 8: Does Ioco depend on V, transistor is faulty. A
current. is excessive the
If the leakage
[Link] collector to
this is to measure
quick test to determine
transistor is
range of the AVO). The
emitter resistance (R x 100
[Link]. For
z is not. high in both
leaky if the resistance
"good" [Link],
7> 5 K-2 for low power transistors,
Z > 50-2 for high power transistors.
7
Transistor Characterist.i cs:
To obtain an [Link] of the behaviour of the transistor as
circuit. device, one needs to know the inter relationships of the
input parameters (Vor ) and the Output parameters
These are given by the characteristics Curves. For [Link]+
purposes, three sets of characteristics for the Common [Link]
[Link] are of partiCular interest. These are the input
characteristio's which relates base-emitter voltage to base Current,
the transfer characteristics. 1inking co1lector Current to base
Current; and the output. characteristic showing the relationship
between collector current and coilector emitter voltage.
1. Input. Characteristic:
nis is the piot of V against I at fixed V and is essentially
of the base emitter
the forward currentvoltage characteristic
diode.
Experiment.:
1. Using the PNP transistor, connect up the circuit as in Fig.5.
With 6 volts, (use the voltmeter which has reso ution
2.
of 0.1N to me asure Voc as a [Link] of I in the range 0-50 A
3. Repeat 2 for Vo= 172 volt and for V.
Plot the input characteristics, taking both and as
4. BE
[Link]. (i.e. plot I, versus Vor: for each value of Vr
[Link] 11:
resistance of the base
Does the (absolute va+ue of ) the forward
[Link] diode increase or decrease with base Current?
[Link] 12:
How does the value of V affect the [Link] of [Link] base emitter
diode.
, Transfer Characteristics:
A piot. of against. at. fixed V is the simplest way of 1 inking
that the transistor is most
input and output parameters. This shows
operated device.
simp+y thought. of as a current
Fxperiment.:
function of for
1. With the circuit of Fig.5 measure I, s a
Volt (b) CE
Y, 6 vo t.s.
the range 0-50 A, with (a) Vr = 1
8
([Link] 13: How does V
CE affect B?
[Link] 14:
At a given o iS I, anything ike a 1inear funct.i on of Vac?
Collector [Link]:
This is the fami ly of plots of I fixed.
against Vog: R being In
making the required measurenents, it. must. be remembered that. the
power dissiplated in the transistor.
P =VcE 'C
must not exCeed a recommended value P [Link] overheating w111
cause the [Link] to destroy itself in a "therma1
[Link]
can be found in the [Link]; in fact., it vould be prudent not te
a typteal trensistor
exceed 1/3 ProT: (PrOT TOr = 150 mw.)
[In general, do not exceed 50 mw, i.e. if = 5V, r
should not. exceed 10 ma]
Experi ment:
1. With I, as ordinate and Vr as abscissa, Piot the maximum
pOwe curve.
cE = 1/3 ProT 50 mw
for the transistor type used. (It wi11 be a curve of the type
G/x)
2.. Piot le against. VoE for Ia =0, 10, 20, 30, 40, 50, HA.
DO NOT EXCEED MAXIMUM POWER
[Link] 15:
Which of I, and Vr plays the dominant role in determining I?
Does I, saturate or continue to increase with V
Reference:
1. Gibbons, Semiconductor Electronics
2. Milton [Link] Transistors
3. Angelo Flectronic Circuit.s
4. [Link]/C. M. Thomson "Electronic circuits nd Systems
Evaiuate thne fol Towing
parameters (known as hybrid
+he characteristic Curves: parameters from
1.
AI
B (input impedance parameter)
2. BE
n2 CE (reverse voltage transfer parameter)
3.
4.
ng2 V
cE) TB (output conductance parameter)
e.g- n1 WOuTd be obtained from the
input
in Fig.6. characteristics, as shown
J ( at Constant Vee
Fig 6
Vee
Do similarly for other
parameters. Tabuiate the
obtain, specifying the bias value parameters you
where they are obtained.
