Scribd
Upload
118 views5 pages

2SA1179 Transistor Specifications

This document provides specifications for the 2SA1179 silicon epitaxial planar transistor from BL Galaxy Electrical, including: - It is a high-speed switching transistor complementary to the 2SD1749, with high forward current transfer ratio for power applications. - Maximum ratings including collector-base voltage of -55V, collector-emitter voltage of -50V, and continuous collector current of -150mA. - Electrical characteristics including DC current gain of 200-400, collector-emitter saturation voltage below -0.5V, and transition frequency of up to 180MHz. - It comes in a SOT-23 surface mount package and is available in 3000-piece reels.

Uploaded by

sacral
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
118 views5 pages

2SA1179 Transistor Specifications

This document provides specifications for the 2SA1179 silicon epitaxial planar transistor from BL Galaxy Electrical, including: - It is a high-speed switching transistor complementary to the 2SD1749, with high forward current transfer ratio for power applications. - Maximum ratings including collector-base voltage of -55V, collector-emitter voltage of -50V, and continuous collector current of -150mA. - Electrical characteristics including DC current gain of 200-400, collector-emitter saturation voltage below -0.5V, and transition frequency of up to 180MHz. - It comes in a SOT-23 surface mount package and is available in 3000-piece reels.

Uploaded by

sacral
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1179

FEATURES
Pb
z High forward current transfer ratio hFE
Lead-free
which has satisfactory linearity.
z High speed switching.
z Complementary to 2SD1749.

APPLICATIONS
z For power application and switching. SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

2SA1179 M SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage -55 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -Continuous -150 mA

PC Collector Dissipation 200 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

Document number: BL/SSSTC093 [Link]


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1179

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -55 V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V

Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA

DC current gain hFE VCE=-6V,IC=-1mA 200 400

Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V


Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1.0 V
Transition frequency fT VCE=-6V, IC=-10mA 180 MHz

Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC093 [Link]


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1179

Document number: BL/SSSTC093 [Link]


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1179

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

2SA1179 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC093 [Link]


Rev.A 4
[Link]

You might also like