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Silicon Epitaxial Planar Transistor 2SA1235A: Galaxy Electrical

This document provides specifications for the 2SA1235A silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of excellent saturation voltage and linear DC gain - Applications for low frequency voltage amplification - Maximum ratings and package information for the SOT-23 package - Electrical characteristics including gain, voltage, and capacitance - Packaging outline and soldering footprint dimensions

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GABRIEL ALFONSO
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53 views

Silicon Epitaxial Planar Transistor 2SA1235A: Galaxy Electrical

This document provides specifications for the 2SA1235A silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of excellent saturation voltage and linear DC gain - Applications for low frequency voltage amplification - Maximum ratings and package information for the SOT-23 package - Electrical characteristics including gain, voltage, and capacitance - Packaging outline and soldering footprint dimensions

Uploaded by

GABRIEL ALFONSO
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1235A

FEATURES
Pb
z Small collector to emitter saturation voltage
Lead-free
VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA).
z Excellent lineary DC forward current gain.
z Super mini package for easy mounting.

APPLICATIONS
z PNP epitaxial type transistor designed for low frequency. SOT-23
z Voltage amplify application.

ORDERING INFORMATION
Type No. Marking Package Code

2SA1235A ME/MF/MG SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage -50 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -6 V

IC Collector Current -Continuous -200 mA

PC Collector Dissipation 150 mW

Tj,Tstg Junction and Storage Temperature -55~125 ℃

Document number: BL/SSSTC094 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1235A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V

Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA

VCE=-6V,IC=-1mA 150 800


DC current gain hFE
VCE=-6V,IC=-0.1mA 90

Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V

Transition frequency fT VCE=-6V, IC=-10mA 200 MHz


Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz 4 pF
VCE=-6V,IE=0.3mA,
Noise figure NF 20 dB
f=100MHz,RG=10kΩ

CLASSIFICATION OF hFE(1)
Rank E F G

Range 150-300 250-500 400-800

Marking ME MF MG

Document number: BL/SSSTC094 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SA1235A

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm

PACKAGE INFORMATION
Device Package Shipping

2SA1235A SOT-23 3000/Tape&Reel

Document number: BL/SSSTC094 www.galaxycn.com


Rev.A 3
www.s-manuals.com

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