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Silicon Epitaxial Planar Transistor 2SC2412

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34 views4 pages

Silicon Epitaxial Planar Transistor 2SC2412

Uploaded by

yugewui lin
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC2412

FEATURES
Pb
z Low Cob,Cob=2.0Pf Lead-free
z Complementary to 2SA1037

APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

2SC2412 BQ,BR,BS SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage 60 V

VCEO Collector-Emitter Voltage 50 V

VEBO Emitter-Base Voltage 7 V

IC Collector Current -Continuous 150 mA

PC Collector Dissipation 200 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

Document number: BL/SSSTC020 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC2412

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=1μA,IB=0


B 50 V

Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V

Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA

Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA

DC current gain hFE VCE=6V,IC=1mA 120 560

Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA


B

0.4 V

VCB=12V,IC=-2mA,
Collector output capacitance Cob 2.0 pF
f=100MHz

VCE=12V, IC= 2mA


Transition frequency fT 180 MHz
f=100MHZONGz

CLASSIFICATION OF hFE(1)
Rank Q R S

Range 120-270 180-390 270-560

Marking BQ BR BS

Document number: BL/SSSTC020 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC2412

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC020 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC2412

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

A SOT-23
E Dim Min Max
A 2.85 2.95
K B B 1.25 1.35
C 1.0Typical
D 0.37 0.43
D J
E 0.35 0.48
G G 1.85 1.95
H 0.02 0.1
H
C J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

2SC2412 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC020 www.galaxycn.com


Rev.A 4

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