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PNP Silicon Epitaxial Planar Transistor 2SA1611

This document provides specifications for the BL Galaxy Electrical 2SA1611 PNP silicon epitaxial planar transistor. It is a high voltage transistor with excellent HFE linearity and a high DC current gain of typically 200. It is intended for audio frequency general purpose amplifier applications. Key specifications include a collector-emitter breakdown voltage of -50V maximum and a collector current rating of -100mA continuous. It comes in a SOT-323 surface mount package.

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50 views5 pages

PNP Silicon Epitaxial Planar Transistor 2SA1611

This document provides specifications for the BL Galaxy Electrical 2SA1611 PNP silicon epitaxial planar transistor. It is a high voltage transistor with excellent HFE linearity and a high DC current gain of typically 200. It is intended for audio frequency general purpose amplifier applications. Key specifications include a collector-emitter breakdown voltage of -50V maximum and a collector current rating of -100mA continuous. It comes in a SOT-323 surface mount package.

Uploaded by

khan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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BL Galaxy Electrical Production specification

PNP Silicon Epitaxial Planar Transistor 2SA1611

FEATURES
z High voltage VCEO=-50V.
Pb
Lead-free
z Excellent HFE Linearity.
z High DC current gain : hFE=200 typ.
z Complementary to 2SC4177.

APPLICATIONS
z Audio frequency general purpose amplifier applications. SOT-323

ORDERING INFORMATION
Type No. Marking Package Code

2SA1611 M4/M5/M6/M7 SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage -60 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -Continuous -100 mA

PC Collector Dissipation 150 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

Document number: BL/SSSTF033 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

PNP Silicon Epitaxial Planar Transistor 2SA1611

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -60 V

Collector-emitter breakdown
V(BR)CEO IC=-1mA,IB=0 -50 V
voltage

Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V

Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA

DC current gain hFE VCE=-6V,IC=-1mA 90 200 600

Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.18 -0.3 V

Transition frequency fT VCE=-6V, IC= -10mA 180 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4.5 pF

CLASSIFICANTION OF hFE
Range 90-180 135-270 200-400 300-600

marking M4 M5 M6 M7

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTF033 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

PNP Silicon Epitaxial Planar Transistor 2SA1611

Document number: BL/SSSTF033 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

PNP Silicon Epitaxial Planar Transistor 2SA1611

PACKAGE OUTLINE
Plastic surface mounted package SOT-323

SOT-323
Dim Min Max
A 1.8 2.2
B 1.15 1.35
C 1.0Typical
D 0.15 0.35
E 0.25 0.40
G 1.2 1.4
H 0.02 0.1
J 0.1Typical
K 2.1 2.3
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm

PACKAGE INFORMATION
Device Package Shipping

2SA1611 SOT-323 3000/Tape&Reel

Document number: BL/SSSTF033 www.galaxycn.com


Rev.A 4
www.s-manuals.com

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