U18ECI6203 -
VLSI & HDL Programming
Module 2 – MOS Circuit Design Process
Second Order Effects
UMA MAHESWARI V
Assistant Professor,
Department of Electronics & Communication Engineering,
Kumaraguru College of Technology.
Second Order Effects
• These equations have significant effects on modeling MOS device.
Vds2
Ids = β[(Vgs – Vt)Vds – 2
] : 0 < Vds < (Vgs – Vt)
(Vgs – Vt)2
Ids = β[ ] : 0 < (Vgs – Vt) < Vds
2
β = (με/tox)(W/L) Process Gain Factor
• LEVEL 1 SPICE Models Second order effects
• In Spice it is referred to as KP.
Second Order Effects
Following are the list of second order
effects of MOSFET.
• Threshold voltage – Body effect
• Subthreshold region
• Channel length modulation
• Mobility variation
• Fowler_Nordheim Tunneling
• Drain Punchthrough
• Impact Ionization – Hot Electrons
Threshold voltage – Body
effect
• In digital circuits, the substrate is usually held at zero. But the source-to-substrate (V ) may increase
sb
in case of series connections, and it adds to the channel-substrate potential.
• The change in the threshold voltage of a MOSFET, because of the voltage difference between body
and source is called body effect or substrate-bias effect.
Substrate bias effect constant
Subthreshold region (Subthreshold current)
• The cutoff region described by Ids = 0, Vgs ≤ Vt is also reffered to as
subthreshold region, Where Ids increases exponentially with Vds
& Vgs.
• Ids ≈ 0 , but finite value of Ids to construct very low power
circuits.
• Level 1 SPICE Models set the subthreshold current to 0.
• Sub-threshold current gets larger for smaller gates (L)
Channel length modulation
• When MOS device is in Saturation, the effective channel length
actually decreased such that,
• The reduction in channel length increases the (W/L) ratio, so
Increasing β as the drain voltage increases.
με
• k—process gain factor and
𝑡𝑜𝑥
• λ = emprical channel length modulation factor ranging from
0.02𝑉 −1 to 0.005𝑉 −1
SPICE PARAMETER : λ – Parameter LAMBA
Channel-Length Modulation (Contd)
Channel-length modulation causes iD to increase with vDS in saturation region
Mobility variation
Mobility varies in a number of ways:
1. According to the type of charge carriers : n-devices have higher current-
producing capability than the p-devices.
1. Mobility decreases with increasing doping-concentration and increasing
temperature.
SPICE PARAMETER : μ – Parameter UO
Fowler_Nordheim Tunneling
• When the gate oxide is very thin a current can flow from gate to source or gate to
drain by electron tunnelling through the gate oxide. This called Fowler‐Nordheim
tunnelling.
• This current is proportional to the area of the gate of the transistor as follows,
• Eox = electric field across the gate oxide, E0 & C1 are constants.
• This effect limits the thickness of the gate oxide as processes are scaled. However,
it is great use in electrically alterable programmable logic devices.
Drain Punchthrough
• When the drain voltage is very high w.r.t source, depletion region
around drain may extend to the source causing current to flow
irrespective of the gate voltage (even if it is zero).
• This is known as Punch through condition.
• The field underneath the gate becomes strongly dependent.
• Punch through causes a rapidly increasing current with increasing
drain-source voltage undesirable.
Impact Ionization – Hot
Electrons
• As gate length of MOS is reduced, electric field at drain in saturation increases.
• For submicron gate length , field can become so high that electrons are imparted
with enough energy to become HOT.
• These hot electrons impact the drain, dislodging holes that are then swept toward
the negatively charged substrate and appear as substrate current.
• This effect is known as impact ionization.
• These electrons can penetrate the gate oxide causing gate current degradation
and leads to failure of circuits.
THANK YOU
