SEMICONDUCTOR

TECHNICAL DATA
KGF60N65KDF

General Description

KEC Field Stop Trench IGBTs offer low switching losses, high energy O
A B
S K
efficiency and short circuit ruggedness.
It is designed for applications such as Power Factor Correction(PFC),
Inverterized MWO, Welder, Uninterrupted Power Supplies(UPS) and General DIM MILLIMETERS

C
_ 0.30
15.90 +
Converters. A

J
B _ 0.20
5.00 +
C _ 0.30
20.85 +
D _ 0.20
3.00 +
E _ 0.20
2.00 +

G
F _ 0.20
1.20 +
D M G Max. 4.50
H _ 0.70
FEATURES 20.10 +

H
E _ 0.02
I 0.60 +
・High speed switching F
I J _ 0.20
14.70 +
K _ 0.10
2.00 +
・High ruggedness, temperature stable behavior M _ 0.20
2.40 +
O _ 0.30
3.60 +
・Extremely enhanced avalanche capability P _ 0.30
5.45 +
P P
Q _ 0.20
3.60 +
R _ 0.10
7.19 +
1 2 3
S

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC SYMBOL RATING UNIT

TO-247
Collector-Emitter Voltage VCES 650 V
Gate-Emitter Voltage VGES ±20 V

@Tc=25℃ 120 A
Collector Current IC
@Tc=100℃ 60 A C
Pulsed Collector Current ICM* 180 A
Diode Continuous Forward Current @Tc=100℃ IF 60 A
Diode Maximum Forward Current IFM 120 A G
@Tc=25℃ 340 W
Maximum Power Dissipation PD
@Tc=100℃ 170 W E
Maximum Junction Temperature Tj 175 ℃
Storage Temperature Range Tstg -55 to + 175 ℃
*Repetitive rating : Pulse width limited by max. junction temperature

THERMAL CHARACTERISTIC E
C
CHARACTERISTIC SYMBOL MAX. UNIT G

Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.44 ℃/W

Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.3 ℃/W
Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W

2019. 09. 23 Revision No : 0 1/8

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 KGF60N65KDF

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250μA 650 - - V
Collector Cut-off Current ICES VGE=0V, VCE=650V - - 250 μA
Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=1mA 4.3 5.4 6.5 V
VGE=15V, IC=60A - 1.77 2.2 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=120A - 2.47 - V
VGE=15V, IC=60A, TC = 150℃ - 2.12 - V
Dynamic
Total Gate Charge Qg - 105 - nC
Gate-Emitter Charge Qge VCC=400V, VGE=15V, IC= 60A - 20 - nC
Gate-Collector Charge Qgc - 52 - nC
Turn-On Delay Time td(on) - 56 - ns
Rise Time tr - 101 - ns
Turn-Off Delay Time td(off) - 173 - ns
VCC=400V, VGE=15V, IC=60A, RG=10Ω
Fall Time tf - 34 - ns
Inductive Load, TC = 25℃ (Note 1)
Turn-On Switching Loss Eon - 3.1 - mJ
Turn-Off Switching Loss Eoff - 1.1 - mJ
Total Switching Loss Ets - 4.2 - mJ
Turn-On Delay Time td(on) - 56 - ns
Rise Time tr - 100 - ns
Turn-Off Delay Time td(off) - 216 - ns
VCC=400V, VGE=15V, IC=60A, RG=10Ω
Fall Time tf - 42 - ns
Inductive Load, TC = 150℃ (Note 1)
Turn-On Switching Loss Eon - 3.2 - mJ
Turn-Off Switching Loss Eoff - 1.7 - mJ
Total Switching Loss Ets - 4.9 - mJ
Input Capacitance Cies - 2981 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 158 - pF
Reverse Transfer Capacitance Cres - 34 - pF
Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100℃ 5 - - μs
Note 1 : Energy loss include tail current and diode reverse recovery.

Marking

KGF
60N65KDF
025

1 Device Mark 1

2 Device Mark 2

3 Lot No

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 KGF60N65KDF

ELECTRICAL CHARACTERISTIC OF DIODE

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25℃ - 2.16 -
Diode Forward Voltage VF IF = 60A V
TC=150℃ - 2.2 -
TC=25℃ - 116 -
Diode Reverse Recovery Time trr ns
TC=150℃ - 148.5 -
VCC = 400V
TC=25℃ - 9.7 -
Diode Peak Reverse Recovery Current Irr IF = 60A A
TC=150℃ - 12.7 -
di/dt = 300A/μs
TC=25℃ - 0.6 -
Diode Reverse Recovery Charge Qrr μC
TC=150℃ - 1.3 -

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 KGF60N65KDF

Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics

180 180
Common Emitter 15V Common Emitter
160 TC=25 C 12V 160 VGE = 15V
Collector Current IC (A)

Collector Current IC (A)

VGE=20V TC = 25 C
140 11V 140 TC = 150 C
120 120
100 10V 100
80 80
9V
60 60
40 40
8V
20 20
7V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)

Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE

4 20
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)

Common Emitter Common Emitter

VGE = 15V TC = 25 C
16
3
120A
12
60A
2 IC =30A
IC = 60A 8

1 120A
4

0 0
25 50 75 100 125 150 0 4 8 12 16 20

Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V)

Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics

20 10000
Collector - Emitter Voltage VCE (V)

Common Emitter
TC = 150 C Cies
16
Capacitance (pF)

1000
12 60A
IC =30A
Coes

8
120A
100 Cres

4 Common Emitter
VGE = 0V, f = 1MHz
TC = 25 C
0 10
0 4 8 12 16 20 0 10 20 30 40

Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V)

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 KGF60N65KDF

Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance

1000 10000 Common Emitter

VCC = 400V, VGE = 15V
IC = 60A
Switching Time (ns)

Switching Time (ns)

TC = 25 C
TC = 150 C
1000

100 tr
td(off)
td(on) 100
Common Emitter tf
VCC = 400V, VGE = 15V
IC = 60A
TC = 25 C
TC = 150 C
10 10
0 10 20 30 40 50 60 0 10 20 30 40 50 60

Gate Resistance RG (Ω) Gate Resistance RG (Ω)

Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current
10000 1000

Eon
Switching Time (ns)
Switching Loss (uJ)

Eoff
100 tr

td(on)
1000

Common Emitter 10 Common Emitter

VCC = 400V, VGE = 15V VCC = 400V, VGE = 15V
IC = 60A Rg = 10 Ω
TC = 25 C TC = 25 C
TC = 150 C TC = 150 C
100 1
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70

Gate Resistance RG (Ω) Collector Current IC (Α)

Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current
1000 10000 Common Emitter
VCC = 400V, VGE = 15V
td(off)
Rg = 10 Ω
Switching Time (ns)

Switching Loss (uJ)

100 TC = 25 C Eon
TC = 150 C
tf
Eoff
10 1000

Common Emitter
1 VCC = 400V, VGE = 15V
Rg = 10 Ω
TC = 25 C
TC = 150 C
0.1 100
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

Collector Current IC (Α) Collector Current IC (Α)

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 KGF60N65KDF

Fig 14. SOA Characteristics

18 1000
IC = 60A

Collector Current IC (A)

100

10
50μs
200μs
1ms
1 10ms
DC
0.1

D=0, TC=25 C , Tj < 175 C, VGE=15V

0.01
0 20 40 60 80 100 120 140 1 10 100 1000

Collector-Emitter Voltage VCE (V)

Fig 15. Transient Thermal Impedance of IGBT

1.000
Thermal Resistance (Zthjc)

0.5

0.2

0.100 0.1
0.05 PDM
0.02 t1
0.01
t2
Single Pluse
1. Duty factor D=t1/t2
2. Peak Tj = Pdm Zthjc + TC
0.010
0.00001 0.0001 0.001 0.01 0.1 1 10

Rectagular Pulse Duration (sec)

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Fig 16. Forward Characteristics Fig 17. Reverse Recovery Current

Reverse Recovery Current IRRM (A)

180 11
TC = 25 C
160 10
Forward Current IF (A)

140 TC = 25 C 9
120 TC = 150 C di/dt=300A/μs
8
100 7
80 6
60 5
di/dt=100A/μs
40 4
20 3
0 2
0 1 2 3 4 5 0 10 20 30 40 50 60 70

Forward Voltage VF (V) Forward Current IF (A)

Fig 18. Reverse Recovery Time

700
TC = 25 C
Reverse Recovery Time trr (ns)

600

500

400 di/dt=100A/μs

300

200
di/dt=300A/μs

100

0
0 10 20 30 40 50 60 70

Forward Current IF (A)

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 KGF60N65KDF

19.

400V

20.

21.
㎤

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