STGF30M65DF2

Trench gate field-stop IGBT, M series 650 V, 30 A

low-loss in a TO-220FP package
Datasheet - production data

Features
 6 µs of short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 30 A
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode

Applications
 Motor control
TO-220FP  UPS
 PFC
Figure 1: Internal schematic diagram
Description
C (2) This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
G (1) functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.

Sc12850_no_tab
E (3)

Table 1: Device summary

Order code Marking Package Packing
STGF30M65DF2 G30M65DF2 TO-220FP Tube

April 2017 DocID027430 Rev 5 1/16

This is information on a product in full production. www.st.com
Contents STGF30M65DF2

Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 11
4 Package information ..................................................................... 12
4.1 TO-220FP package information ...................................................... 13
5 Revision history ............................................................................ 15

2/16 DocID027430 Rev 5

STGF30M65DF2 Electrical ratings

1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V
IC(1) Continuous collector current at TC = 25 °C 60 A
IC(1) Continuous collector current at TC = 100 °C 30 A
ICP(2) Pulsed collector current 120 A
VGE Gate-emitter voltage ±20 V
(1)
IF Continuous forward current at TC = 25 °C 60 A
(1)
IF Continuous forward current at TC = 100 °C 30 A
IFP(2) Pulsed forward current 120 A
Insulation withstand voltage (RMS) from all three leads to external
VISO 2.5 kV
heat sink (t = 1 s, TC = 25 °C)
PTOT Total dissipation at TC = 25 °C 38 W
TSTG Storage temperature range -55 to 150 °C
TJ Operating junction temperature range -55 to 175 °C

Notes:
(1)Limited by maximum junction temperature.
(2)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol Parameter Value Unit
RthJC Thermal resistance junction-case IGBT 4 °C/W
RthJC Thermal resistance junction-case diode 5 °C/W
RthJA Thermal resistance junction-ambient 62.5 °C/W

DocID027430 Rev 5 3/16

Electrical characteristics STGF30M65DF2

2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter breakdown
V(BR)CES VGE = 0 V, IC = 250 µA 650 V
voltage
VGE = 15 V, IC = 30 A 1.55 2.0
VGE = 15 V, IC = 30 A,
Collector-emitter saturation 1.95
VCE(sat) TJ = 125 °C V
voltage
VGE = 15 V, IC = 30 A,
2.1
TJ = 175 °C
IF = 30 A 1.85 2.65
VF Forward on-voltage IF = 30 A, TJ = 125 °C 1.6 V
IF = 30 A, TJ = 175 °C 1.5
VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 µA

Table 5: Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitance - 2490 -
VCE = 25 V, f = 1 MHz,
Coes Output capacitance - 143 - pF
VGE = 0 V
Cres Reverse transfer capacitance - 46 -
Qg Total gate charge VCC = 520 V, IC = 30 A, - 80 -
VGE = 0 to 15 V
Qge Gate-emitter charge - 18 - nC
(see Figure 30: " Gate
Qgc Gate-collector charge charge test circuit") - 32 -

4/16 DocID027430 Rev 5

STGF30M65DF2 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time 31.6 - ns
tr Current rise time 13.4 - ns
(di/dt)on Turn-on current slope 1791 - A/µs
VCE = 400 V, IC = 30 A,
td(off) Turn-off-delay time VGE = 15 V, RG = 10 Ω 115 - ns
tf Current fall time (see Figure 29: " Test circuit 110 - ns
for inductive load switching" )
Eon(1) Turn-on switching energy 0.3 - mJ
(2)
Eoff Turn-off switching energy 0.96 - mJ
Ets Total switching energy 1.26 - mJ
td(on) Turn-on delay time 30 - ns
tr Current rise time 17 - ns
(di/dt)on Turn-on current slope VCE = 400 V, IC = 30 A, 1435 - A/µs
td(off) Turn-off-delay time VGE = 15 V, RG = 10 Ω, 116 - ns
TJ = 175 °C
tf Current fall time (see Figure 29: " Test circuit 194 - ns
Eon(1) Turn-on switching energy for inductive load switching" ) 0.67 - mJ
(2)
Eoff Turn-off switching energy 1.36 - mJ
Ets Total switching energy 2.03 - mJ
VCC ≤ 400 V, VGE = 13 V,
10 -
Short-circuit withstand TJstart = 150 °C
tsc µs
time VCC ≤ 400 V, VGE = 15 V,
6 -
TJstart = 150 °C

Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time - 140 - ns
Qrr Reverse recovery charge - 880 - nC
IF = 30 A, VR = 400 V,
Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 17 - A
(see Figure 29: " Test circuit
Peak rate of fall of reverse
dIrr/dt for inductive load switching") - 650 - A/µs
recovery current during tb
Err Reverse recovery energy - 115 - µJ
trr Reverse recovery time - 244 - ns
Qrr Reverse recovery charge IF = 30 A, VR = 400 V, - 2743 - nC
VGE = 15 V, di/dt = 1000 A/µs,
Irrm Reverse recovery current - 25 - A
TJ = 175 °C
Peak rate of fall of reverse (see Figure 29: " Test circuit
dIrr/dt - 220 - A/µs
recovery current during tb for inductive load switching")
Err Reverse recovery energy - 320 - µJ

DocID027430 Rev 5 5/16

Electrical characteristics STGF30M65DF2
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature
GIPD170420151008FSR GIPD170420151016FSR
Ptot IC
(W) (A)

32 20

24 15

16 10

8 5
VGE ≥ 15V, TJ ≤ 175 °C VGE ≥ 15V, TJ ≤ 175 °C

0 0
-50 0 50 100 150 TC(°C) -50 0 50 100 150 TC(°C)

Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C)
GIPD100420151008FSR GIPD100420151025FSR
IC IC
(A) (A) VGE=15V
VGE=15V
13V
100 100
13V
11V
80 80

60 60 11V

40 40
9V 9V

20 20
7V
0 0
0 1 2 3 4 5 VCE(V) 0 1 2 3 4 5 VCE(V)

Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current
GIPD281020131418FSR GIPD281020131116FSR
VCE(sat) VCE(sat)
(V) IC= 60A (V)
TJ= 175°C
VGE= 15V VGE= 15V
3 5

2.6 4
TJ= 25°C
IC= 30A
2.2 3

1.8 2
IC= 15A TJ= -40°C
1.4 1

1 0
-50 0 50 100 150 TJ(°C) 0 20 40 60 80 100 IC(A)

6/16 DocID027430 Rev 5

STGF30M65DF2 Electrical characteristics
Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area
GIPD170420151024FSR GIPD170420151029FSR
Ic [A] IC
(A)

20

16 100
Tc=80°C
Tc=100 °C 1 µs
12

10 µs
8 10

rectangular current shape, Single pulse 100 µs

4 (duty cycle=0.5, VCC = 400V, RG=10 Ω, Tc= 25°C, TJ ≤ 175°C
VGE = 0/15 V, TJ =175°C)
VGE= 15V
1 1 ms
0
1 10 f [kHz] 1 10 100 VCE(V)

Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current
GIPD100420151152FSR GIPD100420151209FSR
IC VF (V)
(A)
VCE= 5V 3
100 TJ= 25 °C TJ= -40°C

2.5
80
2 TJ= 175°C
60
1.5
40
1 TJ= 25°C
TJ= 175 °C
20
0.5

0 0
5 6 7 8 9 10 11 VGE(V) 0 20 40 60 80 100 IF(A)

Figure 12: Normalized VGE(th) vs. junction Figure 13: Normalized V(BR)CES vs. junction
temperature temperature
GIPD100420151232FSR GIPD100420151240FSR
VGE(th) V(BR)ces
(norm) (norm)
IC= 500µA IC= 250µA
VCE= VGE
1.1 1.1

1.0 1.05

0.9 1.0

0.8 0.95

0.7 0.9
-50 0 50 100 150 TJ(°C) -50 0 50 100 150 TJ(°C)

DocID027430 Rev 5 7/16

Electrical characteristics STGF30M65DF2
Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage
GIPD100420151249FSR GIPD100420151257FSR
C VGE
(pF) (V)
f= 1MHz

16 IC= 30A
Cies
IG= 1mA
1000 VCC= 520V
12

8
100

Coes 4

Cres 0
10
0.1 1 10 100 VCE(V) 0 20 40 60 80 Qg(nC)

Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance
GIPD100420151322FSR GIPD100420151328FSR
E E
(mJ) (mJ)
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C VCC = 400 V, VGE = 15 V,
4 4 IC = 30 A, TJ = 175 °C

3 Etot 3
Etot

Eoff
2 2
Eoff

1 1
Eon
Eon

0 0
0 10 20 30 40 50 60 IC(A) 0 20 40 60 80 100 RG(Ω)

Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter
voltage
GIPD100420151336FSR GIPD100420151340FSR
E E
(mJ) (mJ)
VCC= 400V, VGE= 15V, TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 30A RG= 10Ω, IC= 30A
2.5
2

2
Etot Etot Eoff
1.5
Eoff
1.5

1
1

0.5 Eon
0.5
Eon
0 0
0 50 100 150 TJ(°C) 150 250 350 450 VCE(V)

8/16 DocID027430 Rev 5

STGF30M65DF2 Electrical characteristics
Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current
GIPD100420151351FSR GIPD100420151403FSR
tsc t
ISC(A) (ns)
(µs) VCC ≤ 400V, TJ ≤ 150°C TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
ISC
20 150 tf
tSC
100
td(off)
15 120
td(on)

10 90
10 tr

5 60

0 30 1
9 10 11 12 13 14 15 VGE(V) 0 10 20 30 40 50 IC(A)

Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode
current slope
GIPD100420151412FSR GIPD100420151417FSR
t Irm
(ns) (A)
TJ= 175°C, VGE= 15V, IF = 30A, VCC = 400V
IC= 30A, VCC= 400V VGE = 15V
40

tf 35

100 td(off) 30
TJ =175°C

td(on) 25

20
tr
10 15
0 20 40 60 80 RG(Ω) 200 600 1000 1400 1800 di/dt(A/µs)

Figure 24: Reverse recovery time vs. diode current Figure 25: Reverse recovery charge vs. diode
slope current slope
GIPD100420151434FSR GIPD100420151442FSR
trr Qrr
(ns) IF = 30A, VCC = 400V, (µC)
IF = 30A, VCC = 400V,
VGE = 15V VGE = 15V
280
2.9

260
2.8

240
TJ =175°C
2.7
220

2.6
200 TJ =175°C

180 2.5
200 600 1000 1400 1800 di/dt(A/µs) 200 600 1000 1400 1800 di/dt(A/µs)

DocID027430 Rev 5 9/16

Electrical characteristics STGF30M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
GIPD100420151455FSR
Err
(mJ)
IF = 30A, VCC = 400V,
VGE = 15V
0.38

0.34

0.3

TJ =175°C
0.26

0.22

0.18
200 600 1000 1400 1800 di/dt(A/µs)

Figure 27: Thermal impedance for IGBT

Figure 28: Thermal impedance for diode

10/16 DocID027430 Rev 5

STGF30M65DF2 Test circuits

3 Test circuits
Figure 29: Test circuit for inductive load Figure 30: Gate charge test circuit
switching

A A
C

G L=100 µH

E B
B
C 3.3 1000 VCC
µF µF
G D.U.T

RG E
+
-

AM01504v 1

Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform

di/dt Qrr
trr
IF
ts tf

IRRM t
10%
IRRM

VRRM

dv/dt

AM01507v1

DocID027430 Rev 5 11/16

Package information STGF30M65DF2

4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

12/16 DocID027430 Rev 5

STGF30M65DF2 Package information
4.1 TO-220FP package information
Figure 33: TO-220FP package outline

7012510_Rev_12_B

DocID027430 Rev 5 13/16

Package information STGF30M65DF2
Table 8: TO-220FP package mechanical data
mm
Dim.
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

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STGF30M65DF2 Revision history

5 Revision history
Table 9: Document revision history
Date Revision Changes
28-Jan-2015 1 First release.
04-May-2015 2 Added STGF30M65DF2 electrical characteristics curves.
19-Oct-2015 3 Changed Figure 27: "Thermal impedance for IGBT".
Datasheet promoted from preliminary data to production data
08-Feb-2016 4
Minor text changes
Updated document title.
Updated Table 4: "Static characteristics", Table 6: "IGBT switching
characteristics (inductive load)" and Table 7: "Diode switching
11-Apr-2017 5 characteristics (inductive load)".
Updated Figure 13: "Normalized V(BR)CES vs. junction temperature ".
Updated Section 4.1: "TO-220FP package information".
Minor text changes

DocID027430 Rev 5 15/16

 STGF30M65DF2

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