Assignment Solutions: Power Electronics (WEE-802)
Class/Course: [Link]/EE
University: Mangalayatan University, Aligarh
Section A: Multiple Choice Questions (MCQs)
1. An SCR behaves as a:
Answer: (a) Unidirectional
Explanation: SCR (Silicon Controlled Rectifier) allows current to flow only in one direction when triggered. It
acts as a controlled switch that is turned on with a gate pulse and remains on as long as current flows
above a certain threshold.
2. The normal way to turn on a SCR is by:
Answer: (a) Appropriate gate current
Explanation: Applying a gate current when the SCR is forward biased causes it to conduct. This is the
standard triggering method in practical circuits.
3. The TRIAC can be represented by:
Answer: (a) Two SCRs in anti-parallel
Explanation: A TRIAC can conduct in both directions and is structurally equivalent to two SCRs connected in
opposite directions (anti-parallel) with a common gate.
4. Which device is most suited for high frequency applications?
Answer: (a) MOSFET
Explanation: MOSFETs offer fast switching capabilities due to low gate drive power and high input
impedance, making them suitable for high-frequency applications.
5. The minimum value of anode current below which it must fall to turn-off the device is called:
Answer: (a) Holding current value
Explanation: If the current through the SCR falls below the holding current, it stops conducting and returns
to its OFF state.
6. During the rise time of SCR turn-on:
Answer: (b) Anode current rises from zero to very high value
Explanation: After gate triggering, the anode current rapidly increases from zero to its full conducting value
during the rise time.
7. The latching current is ______ than the holding current:
Answer: (b) Higher
Explanation: Latching current is the minimum current required immediately after the SCR turns on to
maintain conduction, and it is higher than the holding current.
8. di/dt protection is provided by:
Answer: (b) Connecting an inductor in series with the load
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Explanation: An inductor in series limits the rate of rise of current (di/dt), preventing localized heating or
damage to the SCR.
9. dv/dt protection is provided in order to:
Answer: (c) Avoid accidental turn-on of the device
Explanation: A rapid rise in voltage (dv/dt) across the SCR may cause unintended triggering. dv/dt
protection is typically achieved using snubber circuits.
10. Over-voltages on SCR are minimized by using:
Answer: (c) Varistors
Explanation: Varistors clamp excessive voltages and protect SCRs from transient over-voltage conditions.
Section B: Short Descriptive Answers
Q11. Define power electronics and give the applications.
Power electronics is the application of solid-state electronics to the control and conversion of electric power.
It deals with the processing and controlling of electrical energy using electronic switches. Devices such as
SCR, IGBT, MOSFET, and diodes are employed to convert electrical energy from one form to another with
minimal energy loss.
Applications include: - Industrial motor drives - Electric vehicle power systems - Uninterruptible power
supplies (UPS) - Renewable energy systems (solar/wind converters) - Power supplies for consumer
electronics
Q12. Define holding current of SCR.
Holding current is the minimum anode current required to keep the SCR in the conducting state. If the
anode current drops below this level, the SCR reverts to the OFF (blocking) state. It is essential for ensuring
that the SCR remains latched in conduction.
Q13. Define latching current of SCR.
Latching current is the minimum current that must flow through the SCR immediately after it is turned on
to ensure that it stays ON after the gate signal is removed. This current establishes the internal
regenerative feedback required for sustained conduction.
Q14. Applications of TRIAC:
TRIACs are widely used in AC power control applications due to their bidirectional conducting ability. - Light
dimmers - Fan speed controls - Heater control circuits - AC motor speed regulators - Electronic switches in
domestic appliances
Q15. Methods to turn on thyristors:
- Gate triggering: Applying a gate current pulse while forward biased. - dv/dt triggering: Rapid voltage
rise across the device. - Breakover voltage triggering: Exceeding the breakdown voltage. - Thermal
triggering: Heat generation causing breakdown. - Light triggering: Using photons in LASCRs.
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Q16. Define commutation of SCR and its types:
Commutation is the process of turning off the conducting SCR by reducing its anode current below the
holding value.
Types: - Natural Commutation: Occurs naturally in AC circuits. - Forced Commutation: External circuits
force the current to zero in DC systems (Classes A-E).
Section C: Long Descriptive Answers
Q17. Over-current and Over-voltage Protection in SCR:
SCRs are vulnerable to damage from over-current and over-voltage conditions.
Over-current protection methods: - Fuses: Protect by melting under excessive current. - Circuit Breakers:
Disconnect circuit upon fault detection. - Current Limiting Inductors: Reduce the rate of current rise. -
Electronic Sensing Circuits: Monitor current and shut down upon over-current.
Over-voltage protection methods: - Snubber Circuits (RC): Suppress voltage transients. - Varistors:
Provide voltage clamping. - Zener Diodes: Protect gate circuits. - Metal Oxide Varistors (MOV): Divert
surge voltages.
Q18. Modes of Operation of Thyristor and VI Characteristics:
SCR operates in three primary modes: 1. Forward Blocking Mode: Anode is positive, no gate pulse; SCR
blocks current. 2. Forward Conduction Mode: Gate pulse applied; SCR conducts. 3. Reverse Blocking
Mode: Anode is negative; reverse bias blocks current.
VI Characteristics: - X-axis: Anode to Cathode Voltage (V) - Y-axis: Anode Current (I) - Shows transition
from blocking to conducting upon triggering. - Curve has distinct regions showing behavior under forward
and reverse conditions.
Q19. Construction of SCR with Sketch:
SCR is a four-layer (PNPN) device with three terminals: Anode (A), Cathode (K), and Gate (G).
Structure: - Layers: P1-N1-P2-N2 - Junctions: J1, J2, J3 - Gate connected to inner P-layer (P2) - Controlled
conduction initiated by gate pulse.
Sketch Description: - Draw 4 layers, label A, K, G. - Mark junctions J1 (P1-N1), J2 (N1-P2), J3 (P2-N2).
Q20. Switching Characteristics of IGBT with Waveforms:
IGBT exhibits controlled switching behavior:
Turn-On: - td(on): Delay between gate voltage rise and collector current rise. - tr: Rise time for collector
current to reach peak. - Vce drops during turn-on.
Turn-Off: - td(off): Delay between gate signal removal and current drop. - tf: Fall time of collector current. -
Vce rises as current falls.
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Waveforms: - Show Gate Voltage (Vg), Collector Current (Ic), and Collector-Emitter Voltage (Vce) vs. time. -
Illustrate switching delays and slopes.
End of Assignment Solution.
