POWER ELECTRONICS (ECE 523)

Assignment

Submitted by:
JAFAR OLALEKAN ANDULGANIY
20/67EC/00961
Serial Number: 47

Lecturer:
Prof. Ajenikoko

Department of Electrical and Computer Engineering

Faculty of Engineering and Technology
Kwara state University, Malete.
 SUMMARY OF POWER ELECTRONICS AND SEMICONDUCTOR DEVICES

Power Electronics

Introduction to Power Electronics

 Combines Power Engineering (generation, transmission, distribution) and

Electronics (control and conversion of power).
 Applications: Industrial drives, lighting control, motor drives, HVDC systems,
and alternative energy sources.

Power Electronic Systems

 Functions:
o Convert electrical energy efficiently and reliably.
o Ensure minimal cost, size, and weight.
 Components: Includes power converters, control circuits, and energy storage.

Applications of Power Electronics

 Static Applications: Welding, heating, electroplating, etc.

 Drive Applications: Motor controls for pumps, compressors, and conveyor
systems.
 Specific Fields:
o Domestic: Refrigerators, lighting, and personal electronics.
o Industrial: Arc furnaces, lasers, and machine tools.
o Aerospace: Spacecraft power systems.
o Transportation: Electric vehicles and locomotives.
o Utilities: HVDC, renewable energy systems.

Types of Power Converters

1. Rectifiers (AC to DC): Convert AC voltage to DC.

2. Choppers (DC to DC): Adjust DC voltage levels.
3. Inverters (DC to AC): Convert DC to variable AC.
4. AC Voltage Controllers: Adjust AC voltage at a constant frequency.
5. Cycloconverters: Change frequency of AC power.
Power Semiconductor Devices

 Power Diodes: Reliable, compact, low voltage drop.

 Power Transistors (BJTs): Fast switching, medium power applications.
o Advantages: High speed, low losses.
o Disadvantages: Complex drive circuit, parallel operation issues.
 Power MOSFETs: High speed, high efficiency, voltage-controlled devices.
 IGBTs: Combines MOSFET and BJT benefits; high voltage, low loss, fast
switching.
 Thyristors (SCRs): For high power control; three operation states (blocking,
conducting, reverse blocking).

Thyristor Operation and Characteristics

 Modes of Operation:
1. Reverse Blocking: Acts as an open circuit.
2. Forward Blocking: High impedance; does not conduct.
3. Forward Conduction: Conducts when triggered.
 Triggering Methods:
o Forward voltage, temperature, light, dv/dt, or gate signal.
 Turn-off (Commutation):
o Forced (external circuit) or Natural (AC source zero crossing).
 Introduction to SCRs

 Definition: A silicon controlled rectifier (SCR) is a four-layer, three-junction, p-n-

p-n semiconductor device used to control high voltage and power.
 Structure: Composed of layers NPNP or PNPN with three junctions (J1, J2, J3)
and terminals (Anode, Cathode, Gate).
 Material: Silicon is the intrinsic semiconductor, with doping tailored for specific
applications.

Modes of Operation

1. Off-State (Forward Blocking Mode):

o Anode: Positive; Gate: Zero voltage; Cathode: Negative.
o J1 and J3 are forward-biased, J2 is reverse-biased.
o High resistance in off-state, conducts only after breakdown.
2. On-State (Conducting Mode):
o Triggered by gate pulse or exceeding breakover voltage.
o Current flows from anode to cathode.
o Maintains conduction even after gate signal is removed.
3. Reverse Blocking Mode:
o Anode: Negative; Cathode: Positive.
o J1 and J3 are reverse-biased; J2 is forward-biased.
o Acts like an open circuit, allows minimal leakage current.
o Exceeding breakdown voltage (V_BR) leads to rapid current increase,
risking damage.

Thyristor Characteristics

 Operation: Functions as an electrical switch for high power.

 Terminals: Anode, Cathode, Gate.
 Key Modes: Reverse blocking, forward blocking (off), and forward conduction
(on).
Two-Transistor Analogy

 Structure: Analogous to two interconnected transistors.

 Behavior: Helps in understanding SCR’s switching mechanism.

Triggering Methods

1. Forward Voltage Triggering:

o Increases anode-cathode voltage until J2 breaks down.
2. Thermal Triggering:
o Junction temperature increase reduces depletion layer width, triggering
SCR.
3. Radiation (Light) Triggering:
o Light exposure generates carriers, triggering conduction (used in
LASCRs).
4. dv/dt Triggering:
o Rapid voltage change across SCR causes it to turn on.
5. Gate Triggering:
o Most common method, applies positive voltage to gate.
o Variants:
 DC Gate Triggering: Continuous DC signal required.
 AC Gate Triggering: Uses AC source; includes resistance (R) and
resistance-capacitance (RC) methods.
 Pulse Gate Triggering: Periodic pulses reduce gate power loss.
Advantages of SCR Triggering

 Pulse Train Triggering:

o Low gate dissipation, isolation, and reduced gate losses.
o Successive pulses ensure reliable triggering in inductive circuits.

SCR Turn-Off Methods (Commutation)

 Definition: Commutation is the process of turning off an SCR by reducing the

anode or forward current below the holding current and applying a reverse
voltage.
 Conditions for Turn-Off:
o Anode or forward current must be reduced to zero or below the holding
current.
o Sufficient reverse voltage is needed to reset the SCR to the forward
blocking state.
 Excess charge carriers: Must be recombined using reverse voltage for effective
turn-off.

Types of Commutation

1. Forced Commutation:
o Used in DC circuits where no natural current zero exists.
o External components like inductors and capacitors create a reverse voltage
to bring the current to zero.
o Classifications: A, B, C, D, and E based on the commutation method.
2. Natural Commutation:
o Utilizes the natural current zero in AC circuits to turn off the SCR.

Forced Commutation Types

1. Class A Commutation (Self/Resonant/Load Commutation):

o Load: Underdamped RLC circuit with DC supply.
o The capacitor charges and discharges, creating a natural zero to reverse
bias the SCR.
o Used in high-frequency operations (above 1000 Hz).
2. Class B Commutation (Self-Commutation):
o LC resonant circuit across SCR.
o Capacitor discharges and recharges, applying reverse voltage to turn off
SCR.
 o Commonly used in chopper circuits.
3. Class C Commutation (Complementary Commutation):
o Two SCRs: Main SCR and complementary SCR.
o Capacitor provides reverse voltage to turn off the main SCR.
o Used in single-phase inverters (e.g., McMurray Bedford inverter).
4. Class D Commutation (Auxiliary Commutation):
o Uses an auxiliary SCR to commutate the main SCR.
o Capacitor discharges through the auxiliary SCR to create reverse voltage.
o Applied in inverters and Jones chopper circuits.
5. Class E Commutation (External Pulse Commutation):
o External pulse source, typically via a pulse transformer, creates reverse
voltage.
o Pulse duration matches the SCR turn-off time.
o Commonly used where tight control of commutation timing is needed.

Natural Commutation

 Definition: The AC supply itself provides the commutation voltage. SCR turns
off when the anode current reaches zero and a reverse voltage is applied.

 Applications: Used in AC systems like line-commutated inverters, controlled

rectifiers, cycloconverters, and AC voltage regulators.
 Process: Transition from forward conduction to blocking state involves two
stages:
o Reverse Recovery Time (trr): Removes excess carriers from outer layers.
o Gate Recovery Time (tgr): Removes carriers from inner layers.
 Turn-Off Time (tq): Total time needed for SCR to regain blocking capability,
usually 10 to 100 microseconds.
Resistance Firing Circuit

 Function: Uses a resistance to control the gate current, triggering the SCR.
 Operation: SCR turns on when gate current exceeds the minimum required level.
 Limitations: Triggering angle limited to 90 degrees, suitable for simple
applications.

Resistance-Capacitance (RC) Firing Circuit

 Improvement over Resistance Circuit: Allows firing angle control from 0 to 180
degrees.
 Operation: Capacitor charges and discharges to provide controlled gate current.
 Advantages: More precise control of firing angle, triggering even after 90 degrees
of the input waveform.

UJT Firing Circuit

 Overview: Uses Uni-Junction Transistor (UJT) to produce a train of pulses for

efficient SCR triggering.
 Operation: Capacitor charges through variable resistance, triggering UJT and
producing pulses.
 Advantages: Reduces gate power loss, provides precise and repeatable pulses.

Series and Parallel Connections of SCRs

Series Connection

 Purpose: Used when required voltage exceeds a single SCR's rating.

 Challenges:
o Unequal voltage sharing due to different recovery characteristics.
 o Voltage sharing achieved using resistors, Zener diodes, and R-C circuits.
 Efficiency: Reduces utilization of individual SCRs; measured by string efficiency
and derating factor.

Parallel Connection

 Purpose: Used when load current exceeds a single SCR's current rating.

 Challenges:
o Unequal current sharing due to differences in dynamic resistance and
other characteristics.
o Proper design with common heat sinks, resistance or inductive
compensation ensures equal current distribution.
 Derating: Usually 10-15% to account for heat dissipation and ensure reliability.

Snubber Circuit Overview

 Purpose: Protects switching devices from overvoltage, overcurrent, and

excessive di/dt or dv/dt during turn-on and turn-off.
 Functions:
o Shape load line for safe transistor operation.
o Reduce transient voltages and currents.
o Dissipate energy in resistors to reduce junction temperature.
o Limit voltage/current change rates to prevent damage.
o Reduce ringing and peak voltage.
Necessity of Snubber Circuits

 Transition Protection: Prevents overheating and overvoltage during ON-OFF

transitions.
 Auxiliary Path: Provides alternate current path to reduce induced voltage and
overheating.

Design of RC Snubber Circuits

 Components:
o Capacitor (C): Stores energy, reduces peak voltage, and limits dv/dt.
o Resistor (R): Limits current, reduces ringing, and dissipates energy.
 Key Considerations:
o Capacitor Selection: Must handle high peak/RMS currents and dv/dt;
energy stored must exceed circuit inductance.
o Resistor Selection: Low inductance to minimize peak voltage; typically
carbon composition or metal film resistors.

Types of Snubber Circuits

 RC Snubber: Common type, useful for both dv/dt and di/dt control.
 Polarized/Non-Polarized RC Snubbers: Reduce peak voltage and control
current during switching.
 Power Bipolar Junction Transistor (BJT)

 Usage: Traditionally used, now replaced by IGBT and MOSFET in most

applications.
 Advantages: Lower saturation voltage over operating temperature range
compared to IGBT/MOSFET.
 Challenges: IGBT and MOSFET require drive circuits to handle higher input
capacitance.

Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)

 Type: Voltage-controlled, majority carrier (unipolar), three-terminal device.

 Structure: Vertical channel structure with source and drain on opposite sides of
the silicon wafer, enhancing power handling capability.
 N-channel Enhancement MOSFET:
o VGS = 0: Device is reverse biased, no current flows.
o VGS > 0: Electrons form a conductive path, allowing current flow from
drain to source.
o Current Control: Increasing gate-to-source voltage (VGS) increases the
drain current.

Insulated-Gate Bipolar Transistor (IGBT)

 Combination of BJT and MOSFET:

o High Input Impedance: Like a MOSFET.
o Low On-State Power Loss: Similar to a BJT.
o Advantages:
 No secondary breakdown.
 Short switching times.
 Better conduction due to bipolar characteristics.
 o No Body Diode: Allows use of external fast recovery diodes for specific
applications.
 Structure:
o Punch-through IGBT: Heavily doped n buffer layer for shorter switching
time.
o Non-Punch-through IGBT: Lightly doped n buffer layer for higher carrier
lifetime and reduced on-state voltage drop.
 Applications: Commonly used in high-voltage applications with lower
conduction losses.

Gate Turn-Off Thyristor (GTO)

 Turn-On/Off Control:
o Turn-On: Positive gate current pulse.
o Turn-Off: Negative gate current pulse diverts PNP collector current,
breaking regenerative feedback.
 Design:
o Reduced PNP current gain via highly doped n spot in the anode p layer.
o Reduced reverse voltage blocking capability, which can be improved by
diffusing gold (reduces carrier lifetime).
 Special Protection: Requires additional protection mechanisms due to its design
features.