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3DD15D Datasheet

The isc Silicon NPN Power Transistor 3DD15D features a collector-emitter breakdown voltage of 200V, a DC current gain ranging from 30 to 250, and is suitable for applications such as B&W TV horizontal output and power amplifiers. It has absolute maximum ratings including a collector current of 5A and a collector power dissipation of 50W. ISC disclaims any liability for the use of its products in specialized applications and reserves the right to change the datasheet content without notice.

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188 views2 pages

3DD15D Datasheet

The isc Silicon NPN Power Transistor 3DD15D features a collector-emitter breakdown voltage of 200V, a DC current gain ranging from 30 to 250, and is suitable for applications such as B&W TV horizontal output and power amplifiers. It has absolute maximum ratings including a collector current of 5A and a collector power dissipation of 50W. ISC disclaims any liability for the use of its products in specialized applications and reserves the right to change the datasheet content without notice.

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clubfreccia
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© © All Rights Reserved
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isc Silicon NPN Power Transistor 3DD15D

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS

·Designed for B&W TV horizontal output , regulated power


supply and power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 300 V

VCEO Collector-Emitter Voltage 200 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 5 A

PC Collector Power Dissipation@TC=75℃ 50 W

TJ Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 3DD15D

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 200 V

V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.5 V

ICEO Collector Cutoff Current VCE= 200V; IB=0 1.0 mA

ICBO Collector Cutoff Current VCB= 200V; IE=0 0.1 mA

hFE DC Current Gain IC= 2A; VCE= 10V 50 160

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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