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2SD1555 Inchange Semiconductor Datasheet 15979543 PDF

The 2SD1555 is a high breakdown voltage, high switching speed silicon NPN power transistor from INCHANGE Semiconductor. It is designed for color TV horizontal output applications. Key specifications include a minimum collector-base breakdown voltage of 1500V, low saturation voltage, and a built-in damper diode. It has maximum ratings of 600V for collector-emitter voltage and 5A for continuous collector current.

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335 views3 pages

2SD1555 Inchange Semiconductor Datasheet 15979543 PDF

The 2SD1555 is a high breakdown voltage, high switching speed silicon NPN power transistor from INCHANGE Semiconductor. It is designed for color TV horizontal output applications. Key specifications include a minimum collector-base breakdown voltage of 1500V, low saturation voltage, and a built-in damper diode. It has maximum ratings of 600V for collector-emitter voltage and 5A for continuous collector current.

Uploaded by

muhsyafa muhsyafa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1555

DESCRIPTION
·High Breakdown Voltage-
：VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode

APPLICATIONS
·Designed for color TV horizontal output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 600 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current- Continuous 5 A

IB Base Current- Continuous 2.5 A

Collector Power Dissipation


PC 50 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.cn 1
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1555

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V

ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA

hFE DC Current Gain IC= 1A ; VCE= 5V 8

VECF C-E Diode Forward Voltage IF= 5A 2.0 V

fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 3 MHz

COB Output Capacitance IE= 0 ; VCB= 10V;ftest=1.0MHz 165 pF

tf Fall Time ICP= 4A , IB1(end)= 0.8A 0.5 1.0 μs

isc website：www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1555

isc website：www.iscsemi.cn 3

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