D313 Transistor Data Sheet Summary
General Description
Type: NPN Bipolar Junction Power Transistor
Applications: Used in low-to-medium power switching, amplifier
applications, and audio circuits.
Package: TO-220
Absolute Maximum Ratings
Collector-Emitter Voltage (Vce): 40V
Collector-Base Voltage (Vcb): 60V
Emitter-Base Voltage (Veb): 5V
Collector Current (Ic): 3A (3000mA)
Total Power Dissipation (Pc): 30W (with proper heat sinking)
Junction Temperature (Tj): 150°C
Electrical Characteristics (at 25°C, unless otherwise specified)
Test
Parameter Symbol Value
Conditions
Ic = 1A, Vce = 40 to
DC Current Gain hFEh_{FE}hFE
4V 320
Collector-Emitter Saturation VCE(sat)V_{CE(sat)}VC Ic = 3A, Ib = 1.5V
Voltage E(sat) 0.3A max
Base-Emitter Saturation VBE(sat)V_{BE(sat)}VB Ic = 3A, Ib = 1.2V
Voltage E(sat) 0.3A max
Vce = 10V, Ic =
Transition Frequency fTf_TfT 4 MHz
0.5A
Vcb = 10V, f =
Collector Capacitance CobC_{ob}Cob 30 pF
1MHz
Typical Usage Notes
Biasing: Suitable for applications requiring higher collector current. Ensure
adequate base drive for switching applications.
Thermal Management: Proper heat sinking is essential due to high power
dissipation capability.
Operating Frequency: Effective for low-to-medium frequency power
applications, including audio amplifiers.
Package Information
Pin Configuration (TO-220):
o Pin 1: Base
o Pin 2: Collector
o Pin 3: Emitter
Note: Always verify the exact specifications from the specific manufacturer’s
datasheet, as there may be slight variations in values based on production.
