SE4625
Complementary Enhancement-Mode MOSFET
Revision: A
General Description Features
Advanced trench technology to provide For N-Channel MOSFET
excellent RDS(ON), low gate charge and low VDS = 12V
operation voltage. This device is suitable for using RDS(ON) = 28mΩ@VGS=4.5V
as a load switch or in PWM applications.
Low RDS(on) For P-Channel MOSFET
Small Package Outline VDS = -12V
ESD protected RDS(ON) =57mΩ @ VGS=-4.5V
Pin configurations
See Diagram below
DFN2*2-6
Absolute Maximum Ratings
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 12 -12 V
Gate-Source Voltage VGS ±8 ±8 V
Continuous 5.1 -4.0
Drain Current ID A
Pulsed 17.6 -13.6
Total Power Dissipation @TA=25℃ PD 1.8 W
Operating Junction Temperature Range TJ -55 to 150 ℃
Thermal Resistance
Parameter Symbol Value Units
Thermal Resistance from Junction to Ambient RθJA 85 ℃/W
ShangHai Sino-IC Microelectronic Co., Ltd. 1.
SE4625
N-Channel Electrical Characteristics (TJ=25℃ unless otherwise noted)
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS (Note 2)
BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V 12 V
IDSS Drain to Source Leakage Current VDS=10V, VGS=0V 1 μA
IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V ±1 μA
VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 0.7 1.2 V
VGS=4.5V, ID=5.0A 28 46
RDS(ON) Static Drain-Source On-Resistance mΩ
VGS=2.5V, ID=4.6A 35 66
DYNAMIC PARAMETERS
Ciss Input Capacitance 469 pF
VGS=0V, VDS=6V,
Coss Output Capacitance 125 pF
f=1MHz
Crss Reverse Transfer Capacitance 95 pF
SWITCHING PARAMETERS
Qg Total Gate Charge 2
5.38 nC
VGS=4.5V, VDS=10V,
Qgs Gate Source Charge 1.3 nC
ID=6.5A
Qgd Gate Drain Charge 0.76 nC
td(on) Turn-On Delay Time VGS=4.5V, VDS=6V, 20 ns
td(off) Turn-Off Delay Time RGEN=1Ω 48 ns
ID=5.2A
td(r) Turn-On Rise Time 22 ns
td(f) Turn-Off Fall Time 15 ns
ShangHai Sino-IC Microelectronic Co., Ltd. 2.
SE4625
P-Channel Electrical Characteristics (TJ=25℃ unless otherwise noted)
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS (Note 2)
BVDSS Drain-Source Breakdown Voltage ID=-250μA, VGS=0 V -12 V
IDSS Drain to Source Leakage Current VDS=10V, VGS=0V -1 μA
IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V ±1 μA
VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA -0.8 -1.2 V
VGS=-4.5V, ID=-3.6A 57 75
RDS(ON) Static Drain-Source On-Resistance mΩ
VGS=-2.5V, ID=-3.2A 87 110
DYNAMIC PARAMETERS
Ciss Input Capacitance 673 pF
VGS=0V, VDS=-6V,
Coss Output Capacitance 175 pF
f=1MHz
Crss Reverse Transfer Capacitance 162 pF
SWITCHING PARAMETERS
Qg Total Gate Charge 2
6.56 nC
VGS=-4.5V, VDS=-10V,
Qgs Gate Source Charge 1.2 nC
ID=-4.3A
Qgd Gate Drain Charge 2.1 nC
td(on) Turn-On Delay Time VGS=-4.5V, VDS=-6V, 30 ns
td(off) Turn-Off Delay Time RGEN=1Ω 62 ns
ID=-3.8A
td(r) Turn-On Rise Time 32 ns
td(f) Turn-Off Fall Time 18 ns
ShangHai Sino-IC Microelectronic Co., Ltd. 3.
SE4625
Typical Characteristics(N-Channel)
ShangHai Sino-IC Microelectronic Co., Ltd. 4.
SE4625
Typical Characteristics(N-Channel)
ShangHai Sino-IC Microelectronic Co., Ltd. 5.
SE4625
Typical Characteristics(P-Channel)
ShangHai Sino-IC Microelectronic Co., Ltd. 6.
SE4625
Typical Characteristics(P-Channel)
ShangHai Sino-IC Microelectronic Co., Ltd. 7.
SE4625
Package Outline Dimension
DFN2x2-6
ShangHai Sino-IC Microelectronic Co., Ltd. 8.
