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Fundamentals of Power Electronics: Week 11 Assignment

This document contains 10 questions regarding fundamentals of power electronics. Question 1 asks about the minimum collector-emitter voltage rating of a transistor in a gate driver circuit. Question 2 asks about increasing the duty ratio in the same circuit by changing the value of a resistor. The remaining questions involve calculating component values for various power electronics circuits, including a speed up base drive circuit, inductive turn-off base drive circuit, MOSFET gate driver with overcurrent protection, and an RCD snubber circuit for a coupled inductor.

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Deep Gandhi
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484 views5 pages

Fundamentals of Power Electronics: Week 11 Assignment

This document contains 10 questions regarding fundamentals of power electronics. Question 1 asks about the minimum collector-emitter voltage rating of a transistor in a gate driver circuit. Question 2 asks about increasing the duty ratio in the same circuit by changing the value of a resistor. The remaining questions involve calculating component values for various power electronics circuits, including a speed up base drive circuit, inductive turn-off base drive circuit, MOSFET gate driver with overcurrent protection, and an RCD snubber circuit for a coupled inductor.

Uploaded by

Deep Gandhi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Fundamentals of Power Electronics: Week 11 Assignment

Q1.

The Gate Driver circuit has following parameters: Vcc=20V, peak magnetizing current of 5A, forward
voltage drop of Df= 0.7 V. What can be the minimum collector emitter voltage(volt) rating of Q1 if Rf=50
ohm?
Ans:- 275.7V (270-280)
Sol:- Vceo(Q1) > 20+5*50+0.7 = 275.7

Q2. Refer to Q1, the maximum duty ratio that can be achieved is 0.6 for 100kHz operation. To increase
duty ratio till 0.8 for same 100kHz operation, what should be the approximate new value of Rf(ohm)?
(Consider the diode drop and leakage inductance to be zero.)

Ans:- 200 ohm (195 to 205)


Sol:- Approx. RMS value of core resetting current = Ipk*sqrt(t_off/(3*t_sw))
Irms^2*Rf*t_off= (1/2)*L*I_p^2 = constant
Now, (t_off1/t_off2)^2 = Rf2/Rf1,
For 100 kHz operation t_off1 = 4us, hence for t_off2 = 2us. Rf2=200 ohm.
Q3. The speed up base drive circuit has following details:
1. Vbe_Q1 = 0.7 V, Vbe_Q2 =0.7V, Vcesat_Q2= Vcesat_Q3=0.2V.
2. Ic1 through Q1 transistor is 1A,Vcc = 15 V, Vs = 20 V.
3. hfesat_Q1 = 10, hfesat_Q2 = hfesat_Q3 = hfesat_Q4 = 100.
4. Turn-Off time of Q1 is 100 us, which is 5 times of the R2*C time constant.

What is the value of R1 (Ω) ________ ?

Ans: [65 to 75]


Solution:
R1= (Vcc - Vbe_Q1 - Vcesat_Q2) / ib_on_Q1
ib_on_Q1 =2*( Ic1/ hfesat_Q1 ) = 2*1 /10 =0.2A
R1= (15 – 0.7 - 0.2) /0.2 = 70.5 Ω

Q4. Referring to Q3, the value of C in ________ uF.


Note: Enter value up to 2 decimal places.

Ans: [1.2 to 1.7]

Solution:

Time constant (t1)=R2*C = T_off_Q1/5 = 20 us

R2= R1/5 = 70.5/5 = 14.1 Ω

C= 20 *10^-6 /R2 =1.42uF


Q5. The inductive turn off base drive circuit details are given below as:
1. Vcc = 15 V, ic =5 A, Vbe_Qp =0.7 V, hfesat_Qp = 20.
2. diL/dt is taken here as (0.5*ic) A/us, R2 = 7 Ω, R1 =35 Ω.

The value of the L required in this circuit is ________ uH.

Ans: [0.35 to 0.45]


Solution:
L* diL/dt = (R2 * ib_ ) – Vbe_Qp =R2* 0.5 * (2* ic/hfesat_Qp) - Vbe_Qp
= (7*1*5 / 20) - 0.7 = 1.05
L= 1.05/(diL/dt) = 1.05/ (5*0.5) = 0.42uH
Q6: A MOSFET gate driver circuit with overcurrent protection is used where Vref=1.5V. At what current
Id in A will the protection gets activated to switch off the gate-drive circuit.(Vdiode=0.6V)

NOTE: Please refer this datasheet(Link to be given here, irf840) and use the value provided in the
specification Table at Tj=25degC
Ans: 1.0588A (1.045 to 1.07)
Solu:
Id*Rd+Vdiode = Vref = 1.5V
Id = (1.5-0.6)/0.85 A = 1.0588A

Q7: Referring to the above Q6, Rb-Cb circuit is used between A and B point for providing blanking time
during starting of each cycle of gate pulse. What value of capacitance Cb in ______pF is used to provide
blanking time of 1µs when Rb=1kΩ.
NOTE: Considering at one time constant(T) of Rb-Cb circuit, voltage across Cb is detected as high for all
AND gates used in the circuit.
Ans: 1000pF (999 to 1001)
Solu: 1 time constant = T = RC = 1usec
C = 1µs/1kΩ = 1nF
Q8. A coupled inductor in series with a MOSFET operating at 80kHz with duty ratio varying from 0.3 to
0.7. An RCD turn-off snubber is connected in parallel to the switch. The input supply to the converter is
48V and average inductor current is 65A. Snubber capacitance (C) required if the maximum turn-off time
60ns is ____nF.

Ans: 40.625 (39.8 to 41.5)


Solution:
C = iL*tf/(2*Vcc) = 40.625nF

Q9. Referring to question 8, the maximum value of resistance (R) is ______ohm.


Ans: 18.46 (17.5 to 18.9)
Solution:
R < Ton-min/5C
Ton-min = 0.3*(1/80k) = 3.75 us
R < 18.46

Q10. Referring to question 8, the power rating of the resistance is ___W


Ans: 3.74 (Range: 3.6 to 3.8)
Solution:
Power rating = 0.5*C*Vcc2*fs = 3.74 W

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