Si2303CDS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

MOSFET PRODUCT SUMMARY FEATURES

• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
Available
0.190 at VGS = - 10 V - 2.7 • TrenchFET® Power MOSFET
- 30 2 nC
0.330 at VGS = - 4.5 V - 2.1 • 100 % Rg Tested
• 100 % UIS Tested

APPLICATIONS
• Load Switch

TO-236
(SOT-23)

G 1

3 D

S 2

Top View
Si2303CDS (N3)*
* Marking Code
Ordering Information: Si2303CDS-T1-E3 (Lead (Pb)-free)
Si2303CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 2.7
TC = 70 °C - 2.2
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C - 1.9b, c
TA = 70 °C - 1.5b, c A
Pulsed Drain Current IDM - 10
TC = 25 °C - 1.75
Continuous Source-Drain Diode Current IS
TA = 25 °C - 0.83b, c
Avalanche Current IAS -5
L = 0.1 mH
Single Pulse Avalanche Energy EAS 1.25 mJ
TC = 25 °C 2.3
TC = 70 °C 1.5
Maximum Power Dissipation PD W
TA = 25 °C 1.0b, c
TA = 70 °C 0.7b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d ≤5s RthJA 80 120
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 35 55
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 160 °C/W.

Document Number: 69991 [Link]

S-83053-Rev. B, 29-Dec-08 1
Si2303CDS
Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient ΔVDS/TJ - 27
ID = - 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 3.8
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 -3 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 10 A
VGS = - 10 V, ID = - 1.9 A 0.158 0.190
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 1.4 A 0.275 0.330
Forward Transconductancea gfs VDS = - 5 V, ID = - 1.9 A 2 S
Dynamicb
Input Capacitance Ciss 155
Output Capacitance Coss VDS = - 15 V, VGS = 0 V, f = 1 MHz 35 pF
Reverse Transfer Capacitance Crss 25
VDS = - 15 V, VGS = - 10 V, ID = - 1.9 A 4 8
Total Gate Charge Qg
2 4
nC
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 1.9 A 0.6
Gate-Drain Charge Qgd 1
Gate Resistance Rg f = 1 MHz 1.7 8.5 17 Ω
Turn-On Delay Time td(on) 4 8
Rise Time tr VDD = - 15 V, RL = 10 Ω 11 18
Turn-Off Delay Time td(off) ID = - 1.5 A, VGEN = - 10 V, RG = 1 Ω 11 18
Fall Time tf 8 16
ns
Turn-On Delay Time td(on) 36 44
Rise Time tr VDD = - 15 V, RL = 10 Ω 37 45
Turn-Off Delay Time td(off) ID ≅ - 1.5 A, VGEN = - 4.5 V, RG = 1 Ω 12 18
Fall Time tf 9 14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 1.75
A
Pulse Diode Forward Currenta ISM - 10
Body Diode Voltage VSD IS = - 1.5 A - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr 17 26 ns
Body Diode Reverse Recovery Charge Qrr 9 14 nC
IF = - 1.5 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 12
ns
Reverse Recovery Rise Time tb 5
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

[Link] Document Number: 69991

2 S-83053-Rev. B, 29-Dec-08
 Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 1.0

8 VGS = 10 thru 5 V 0.8

I D - Drain Current (A)

I D - Drain Current (A)

6 0.6

4 VGS = 4 V 0.4
TC = 125 °C

2 0.2
TC = 25 °C
VGS = 3 V
TC = - 55 °C
0 0.0
0 1 2 3 4 5 0 1 2 3 4

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.5 300

0.4 VGS = 4.5 V 240

R DS(on) - On-Resistance (Ω)

C - Capacitance (pF)

0.3 180 Ciss

0.2 VGS = 10 V 120

0.1 60 Coss

Crss

0 0
0 2 4 6 8 10 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.6

ID = 1.9 A
VGS - Gate-to-Source Voltage (V)

8 1.4 VGS = 10 V, ID = 1.9 A

VDS = 15 V
R DS(on) - On-Resistance
(Normalized)

6 1.2

VDS = 24 V VGS = 4.5 V, ID = 1.4 A

4 1.0

2 0.8

0 0.6
0 1 2 3 4 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 69991 [Link]

S-83053-Rev. B, 29-Dec-08 3
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.5

ID = 1.9 A
0.4

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C 0.3
TJ = 25 °C TJ = 125 °C
1

0.2

0.1 TJ = 25 °C

0.1 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 8 12 16 20

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.2 6

5
2.0
ID = 250 µA 4
Power (W)
V GS(th) (V)

1.8 3

2
1.6
1

1.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000

TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power

10
Limited by RDS(on)*

100 µs
I D - Drain Current (A)

1 ms

10 ms
0.1
100 ms

1 s, 10 s
DC
TA = 25 °C
BVDSS Limited
Single Pulse
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area

[Link] Document Number: 69991

4 S-83053-Rev. B, 29-Dec-08
 Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0

2.4

I D - Drain Current (A)

1.8

1.2

0.6

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

3.0 1.0

2.4 0.8

1.8 0.6
Power (W)
Power (W)

1.2 0.4

0.6 0.2

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 69991 [Link]

S-83053-Rev. B, 29-Dec-08 5
Si2303CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05 t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 104 °C/W

Single Pulse 3. TJM - T A = PDMZthJA(t)

4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1

0.05
0.02

Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see [Link]/ppg?69991.

[Link] Document Number: 69991

6 S-83053-Rev. B, 29-Dec-08
 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 [Link]

09-Jul-01 1
 AN807
Vishay Siliconix

Mounting LITTLE FOOTR SOT-23 Power MOSFETs

Wharton McDaniel

Surface-mounted LITTLE FOOT power MOSFETs use integrated ambient air. This pattern uses all the available area underneath the
circuit and small-signal packages which have been been modified body for this purpose.
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same. 0.114
2.9

0.081
2.05
See Application Note 826, Recommended Minimum Pad
0.150
Patterns With Outline Drawing Access for Vishay Siliconix 3.8
MOSFETs, ([Link] for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET 0.059
footprint . In converting this footprint to the pad set for a power 1.5

device, designers must make two connections: an electrical

connection and a thermal connection, to draw heat away from the
0.0394 0.037
package. 1.0 0.95

FIGURE 1. Footprint With Copper Spreading

The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional Since surface-mounted packages are small, and reflow soldering
function of providing the thermal connection from the package to is the most common way in which these are affixed to the PC
the PC board. The total cross section of a copper trace connected board, “thermal” connections from the planar copper to the pads
to the drain may be adequate to carry the current required for the have not been used. Even if additional planar copper area is used,
application, but it may be inadequate thermally. Also, heat spreads there should be no problems in the soldering process. The actual
in a circular fashion from the heat source. In this case the drain pin solder connections are defined by the solder mask openings. By
is the heat source when looking at heat spread on the PC board. combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.

Figure 1 shows the footprint with copper spreading for the SOT-23 A final item to keep in mind is the width of the power traces. The
package. This pattern shows the starting point for utilizing the absolute minimum power trace width must be determined by the
board area available for the heat spreading copper. To create this amount of current it has to carry. For thermal reasons, this
pattern, a plane of copper overlies the drain pin and provides minimum width should be at least 0.020 inches. The use of wide
planar copper to draw heat from the drain lead and start the traces connected to the drain plane provides a low-impedance
process of spreading the heat so it can be dissipated into the path for heat to move away from the device.

Document Number: 70739 [Link]

26-Nov-03 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 [Link]

Revision: 21-Jan-08 25
 Legal Disclaimer Notice
[Link]
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 08-Feb-17 1 Document Number: 91000