Transistors
2SC3311A
Silicon NPN epitaxial planar type
For low-frequency amplification Complementary to 2SA1309A Features
Optimum for high-density mounting Allowing supply with the radial taping
15.60.5
Unit: mm
4.00.2 2.00.2 (0.8) 3.00.2
[Link] Absolute
Maximum Ratings Ta = 25C
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 100 200 300 150 55 to +150 Unit V V V mA mA mW C C
1 2 3 0.45+0.20 0.10 (2.5) (2.5) 0.45+0.20 0.10 0.70.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
(0.8)
0.75 max.
7.6
1: Emitter 2: Collector 3: Base NS-B1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio
*
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob
Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = 2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 60 50 7
Typ
Max
Unit V V V A A V MHz pF
0.1 1 160 0.1 150 3.5 460 0.3
Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460
Product of no-rank is not classified and have no indication for rank.
Publication date: March 2003
SJC00127BED
2SC3311A
PC Ta
500
60
IC VCE
Ta = 25C
IC VBE
200 VCE = 10 V
Collector power dissipation PC (mW)
50
Collector current IC (mA)
400
160
40 IB = 160 A 140 A 30 120 A 100 A 20 80 A 60 A 10 40 A 20 A
Collector current IC (mA)
300
120 25C 80
200
Ta = 75C
25C
100
40
40
80
120
160
10
12
0.4
0.8
1.2
1.6
2.0
[Link] Ambient temperature Ta (C)
Collector-emitter voltage VCE
(V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
600 VCE = 10 V
300 VCE = 10 V f = 100 MHz Ta = 25C
fT I E
Forward current transfer ratio hFE
10
400
Ta = 75C 25C
Transition frequency fT (MHz)
500
250
200
300
25C
150
200
100
0.1
25C
Ta = 75C 25C
100
50
0.01 0.1
10
100
0 0.1
10
100
0 0.1
10
100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 IE = 0 f = 1 MHz Ta = 25C
240
NV IC
VCE = 10 V Function = FLAT Ta = 25C
200
Noise voltage NV (mV)
160
120
Rg = 100 k
80 20 k 40 4.7 k
10
100
0 10
100
1 000
Collector-base voltage VCB (V)
Collector current IC (A)
SJC00127BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. [Link] (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
