Field Effect Transistor(FET)
By
k. Sreevidya
Asst .professor
Dept of ECE
Difference between BJT & FET
BJT FET
Three terminal semiconductor Three terminal semiconductor
device. device
Emitter, base, collector Source, gate,drain
Current controlled device Voltage controlled device
Bipolar device Unipolar device
Two types- npn & pnp Two types – JFET & MOS FET
Classification of FET
Construction of N-channel JFET
Major part of the structure is n- type
meterial.
Top of the n-type channel Is connected
through an ohmic contact to a terminal
Reffered to as drain(D).
As lower end Connected through an
ohmic contact to a terminal Reffered as
source (S).
P-type meterials connected together and
taken as terminal gate(G).
JFET has two pn junctions under no bias
condition.
JFET operating characteristics:VGS=0V
Three things happen when Vgs=0v and Vds
Is increased from 0v to more positive
Voltage
A depletion region between p-gate and N-
channel increases as electrons from N-
channel Combine with holes From p-gate.
Increasing the depletion region decreasing
the size of N-channel Which increases the
resistance of the N-channel.
Even through the N-channel resistance
increasing the current (ID) from source to
drain through the N-channel is
increasing.This is because Vds is increasing.
JFET operating characteristics: pinch off
If Vgs =0v and Vds is further
increased to a more positive
Voltage , that the depletion region
gets increases and pinchoff the N-
channel.
This suggests that the current in N-
channel (ID) would be dropped to
SaturatIon.
JFET drain characteristics
Plot between Vds Vs Id for
different values of vgs.
When Vgs=0v & Vds is
positive ,Id increases linearly.
When Vds is more positive Voltage
id gets saturated as Idss.
When Vgs=-ve ,& Vds positive
Voltage Id current reduces from
the previous value of Id.
JFET TRANSFER CHARACTERISTICS
Plot between vgs and id for
fixed value of vds
When vgs = 0v id is idss and
as vgs more negative ,the
drain current Id reduces.
THANK YOU