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UJT

The Unijunction Transistor (UJT) is a three-terminal switching device used primarily as a trigger for SCRs and triacs, and is effective in industrial applications such as timers and oscillators. It operates in the break-over mode, where an applied trigger voltage at the emitter allows current to surge briefly before reverting to an OFF state. The UJT exhibits unique characteristics, including negative resistance, and is distinct from BJTs due to its two base contacts.

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20 views

UJT

The Unijunction Transistor (UJT) is a three-terminal switching device used primarily as a trigger for SCRs and triacs, and is effective in industrial applications such as timers and oscillators. It operates in the break-over mode, where an applied trigger voltage at the emitter allows current to surge briefly before reverting to an OFF state. The UJT exhibits unique characteristics, including negative resistance, and is distinct from BJTs due to its two base contacts.

Uploaded by

shahzornisar4
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© © All Rights Reserved
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Unijunction Transistor

• UJT consists of a block of lightly-doped (high resistance) n-


material with a p-material grown into its side. It is often used as a
trigger device for SCRs and triacs. Its characteristics make it very
useful in many industrial circuits, such as timers, oscillators,
waveform generators and gate control circuits for SCRs and
triacs.

• The UJT is three-terminal switching device; emitter, base1 and


base2.It operates in the break-over mode.UJT is a pulse generator
with trigger voltage applied at emitter and this voltage is a
fraction of the voltage across B1 and B2.

• UJT is very different from a BJT. It was originally called a


double base diode due to the presence of two base
contacts.
Figure 5 — 1
Figure 5-1(a) shows the UJT symbol and Figure 5-1(b and c) shows
a UJT connected to a simple circuit.

(a) Schematic symbol and terminal names of a UJT. (b and c) A UJT


connected into a simple circuit. This drawing shows the emitter current
(IE), the emitter-to-base l voltage (VEBI), and the base 2-to-baseBt1 voltage

(b)
• The base to base resistance RBB is the resistance of the device
between terminals B2 and BI when IE = 0, and can be considered as
consisting of the resistors rq and rB2 in series. In equation form,

• The magnitude of r B l is typically from 5 to 12 kD. The


resistance is fairly distributed between B1 and B2 when the
emitter is open circuited (IF = 0).
• Due to the position of the emitter is closer to the base 2 contact
than the base1 contact, the magnitude of r B l is slightly larger than
the rB2 value.
• The resistance rel is shown as a variable resistor since its
magnitude will vary with emitter current IE.(The resistance of the
lower divider (re l ) is inversely proportional to the emitter current).
When thc pn junction is first forward-biased, the junction
resistance of r suddenly appears to drop, and a rush of current
occurs). • 150 at IE 1
at IE › and at IE 50
• For example, 4 the rB values of 2N#92 UJT are 4.6 kfl at IE 3 0,
2 kfl
Operation of
• UJT
Refer to figure 5-1(b)
• The UJT is OFF (no current flow from E to B l).
• If the V EB l exceeds certain value called Vp(the amount of
emitter voltage required to turn the UJT on) which is a certain fixed
percent of VB2pl ,plus 0.6 V, UJT is fired ON.
• In this situation, the E to By circuit becomes almost a short
circuit and current can surge from E to By for very short time and
then the UJT reverts to OFF state.
Vp is given by the following equation:
Vp'p*V B 2 B +0.6V .......(eq.5-1), “p is pronounced eta”
• where p is called standoff ratio (0.5-0.8 typical range) .It
represents the ratio of r'B1 to r‘BB with no current.
• and the 0.6V is the forward turn-ON voltage across the
silicon pn junction which exists between the emitter and base 1.
4
Current-Voltage
• Characteristics
The equivalent circuit of a UJT is shown in Figure 5-2(a).
• The total resistance between B2 and BI is called rBB. It is divided
into two parts, rB2 and rB .
• The emitter is connected through a diode to the junction of rq
and
rB forming a natural voltage divider.
• The diode represents the pn junction between the emitter and
the body of the UJT.
rBi ° * ' B2BI|
rBi — B2Bl y €=0
I

5
From the equivalent
circuit: rel WB2 ... (eq.5-2)
rB
l dl
And for the UJT to be fired the V R I m t l st equal the sum of the
diode forward turn-ON voltage plus the voltage drop across r R J Or
rB1

B2Bl

g (eq.5-3)
r rpm .... ..(eq.5-4)
rD + rBB2
l
re l+ rB2

Comparing this equation with equation 5-1 gives:


Figure 5—2 (
(a)
(b) Equivalent circuit of a UJT. The total resistance between B2 and B1 is called
rBB(5-10kH). It is divided into two parts, rB2 and rB . The emitter is connected
through a diode to the junction of rB and rB . (b) Current versus voltage
characteristic curve of a UJT {IE versus VEBI). The four important points on this
curve are called peak voltage (V ) (the emitter voltage that will cause the pn junction to
become forward bias), peak current ,few qA), valley voltage (Up), and valley current
(/,) and is the minimum current required to keep UJT turn on.

7
• When applied emitter voltage Vygi is smaller than the peak-point voltage Vp the
p-n junction at the emitter is reverse biased and only a small leakage
current I normally flows in
the emitter. The current IEO usually measured in mA, corresponds very
closely with the reverse leakage current .„ of the
conventional bipolar transistor.
This region as indicated in the figure is called the cutoff region.
• When Vgq, reaches Vp(the amount of emitter voltage required to turn the
UJT
On), the pn junction becomes forward biased and I F begins and UJT is turned
on. After turn on, UJT operates in a negative resistance up to a certain value, as
shown by the characteristic curve. As, can be seen , after the peak point(V _
Vp and I 'Ip), V E decreases as I E continues to increase, thus producing the
negative resistance characteristic.
• Please note that negative resistance is a property of sOme electric circuits
where an incrcasc in thc current entering a port results in a decreased voltage
across the same port. This is in contrast to a simple ohmic resistor, which exhibits
an incrcase in voltage under the same conditions. Negative resistors are
theoretical and do not exist as a discrete component. However, some types of
diodes (e.g., tunnel diodes) can be built that exhibit negative resistance in some
pan of their operating range.
Relaxation Oscillator
A simplc timcr circuit and its waveforms using a UJT is shown
in the figure below. Vtiltage across R3 is a spiked waveform that
was created by the rapid discharge ot Cl through R3.The
frequency of oscillation is calculatcd as f = l / T where T is the
period of oscillation given by T - RCln(l/ I -Z).
Note that there is a limitation on the value of R1. If R1 is very
large, then the minimum amount of current delivered into the
eirittcr may not be reached even if the peak voltage has been
reached. If R1 is very small thGn UJT may not be ablG to turn
off
after trun on.. Maximum value of R1 can be calculated as
R1(max) = VBB-V]3/IQ and
R1(min) = VBB-Vv/Iv
Where Vv is the valley emitter voltage and lv is the valley
emitter current

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