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FINFET

FINFET is a non-planar, double gate transistor designed to mitigate short-channel effects in semiconductor devices, developed at UC Berkeley. It features a conducting channel wrapped by a thin silicon fin, enhancing electrostatic control and reducing leakage currents. FINFET technology is widely used in modern processors, offering advantages such as better current driving capability and compact design, although it also presents challenges like reduced electron mobility and reliability issues.

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13 views16 pages

FINFET

FINFET is a non-planar, double gate transistor designed to mitigate short-channel effects in semiconductor devices, developed at UC Berkeley. It features a conducting channel wrapped by a thin silicon fin, enhancing electrostatic control and reducing leakage currents. FINFET technology is widely used in modern processors, offering advantages such as better current driving capability and compact design, although it also presents challenges like reduced electron mobility and reliability issues.

Uploaded by

hp.hema31
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INTRODUCTION TO

FINFET
List of Contents
INTRODUCTION

HISTORY

CONSTRUCTION

WORKING

APPLICATIONS

ADVANTAGES AND DRAWBACKS

CONCLUSION
INTRODUCTION
 The term “FINFET” describes a non-
planar, double gate transistor built on
an SOI substrate, based on the single
gate transistor design.

 The important characteristics of


FINFET is that the conducting channel
is wrapped by a thin Si “fin”, which
forms the body of the device.
 The thickness of the fin determines the effective channel length of the
device.
HISTORY OF FINFET

 FINFET is a transistor design first developed by


Chenming Hu and his colleagues at the University
of California at Berkeley, which tries to overcome
the worst types of SCE(Short Channel Effect).

 Originally, FINFET was developed for use on Silicon-


On-Insulator(SOI).

 SOI FINFET with thick oxide on top of fin are called “Double-Gate” and
those with thin oxide on top as well as on sides are called “Triple-Gate”
FINFETs
CONTRUCTION OF A FINFET

1. Substrate

2. Fin etch

3. Oxide deposition
4. Planarization

5. Recess etch

6. Gate oxide
7. Deposition of the gate

Finally a highly n+-doped poly silicon layer is deposited on top of the


fins, thus up to three gates are wrapped around the channel: one on
each side of the fin, and - depending on the thickness of the gate
oxide on top - a third gate above.
WORKING OF A FINFET
 The working principle of a FinFet is similar to
that of a conventional MOSFET.
 The MOSFET can function in two modes for both
p-channel and n-channel MOSFETs:
enhancement mode and depletion mode
 The channel shows maximum conductance
when there is no voltage on the gate terminal.
 As the voltage changes to positive or negative,
the conductivity of the channel reduces.

 In enhancement mode of MOSFET, when there is no voltage on the gate terminal, it


does not conduct.
 Unlike the depletion mode, in enhancement mode, the device conducts better when
there is more voltage on the gate terminal.
Short channel Effect
• Short-channel effects (SCEs) occur when the
channel length of a MOSFET becomes very
small (sub-100 nm), leading to undesirable
effects like
• Threshold voltage (Vth) roll-off
• Drain-induced barrier lowering (DIBL)
• and increased leakage current.
• FinFETs effectively suppress these effects by
modifying the device structure.
Short Channel Effect
 Gate Wraps Around the Channel (3D
Structure)
 Higher Gate Control Reduces Threshold
Voltage Roll-Off.
 Suppression of Subthreshold Leakage Current
 FinFETs overcome short-channel effects by
enhancing electrostatic control with a multi-
gate structure, reducing DIBL, controlling
threshold voltage variations, and minimizing
leakage currents
ADVANTAGES OF FINFET
 Higher technological maturity than planar DG.
 Suppressed Short Channel Effect(SCE)
 Better in driving current
 More compact
 Low cost

DISADVANTAGES OF FINFET
 Reduced mobility for electrons
 Higher source and drain resistances
 Poor reliability
LATEST UPDATES ABOUT
FINFET
 This month it is expected Qualcomm
Snapdragon 855 will reportedly be the 'world's
first' 7nm SoC
 Media tek helio x30 chipset with decacore
processor uses 10nm technology
 Samsung started its 10nm SoC mass production
in the year 2016 (Samsung galaxy s8)
 In the New York Times, On may 4 2011, it was
published that INTEL will use FINFET for about
22nm.
APPLICATIONS
 Possibility to save power arises when both gates can be controlled
separately.

 The second gate can be used to control the threshold voltage of the
device, thereby allowing fast switching on one side and reduced
leakage currents when circuits are idle.

 Finally, separate access to both gates could also be used to design


simplified logic gates. This would also reduce power, and save chip area,
leading to smaller, more cost-efficient designs.

 World leader in smartphones, Samsung Electronics has incorporated


FinFet in its 14nm processors (Exynos7 Octra). This processor is used in
the latest Samsung smartphone, the Samsung Galaxy S6.

 Along with Samsung, Apple, Intel and TSMC are set to ship the 14nm
technology by 2016. This technology will benefit all smartphones as it
will speed up the phone.
CONCLUSION
 Finally, the industry has proved already many times that existing
planar technology can be mastered and new roadblocks in device
scaling can be removed either by innovations in technological
processes or design solutions.

 This moves the targeted introduction of FINFET technology towards


even smaller technology nodes increasing technological challenges
and restricting its specifications even more.
REFERENCES

[1] https://www.computerhope.com/jargon/f/finfet.htm
[2] https://en.wikipedia.org/wiki/FinFET
[3] http://www.radio-electronics.com/info/data/semicond/fet-field-
effect-transistor/finfet-technology-basics.php
[4]https://www.electronicsnotes.com/articles/
electronic_components/fet-field-effect-transistor/finfet-transistor-
technology.php
Thank you

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