LEC-03 (Power Semiconductor Diodes)
LEC-03 (Power Semiconductor Diodes)
LECTURE#03
Power Semiconductor Diode
Structure of a Power Diode
The structure of a typical power diode is given in the below diagram:
Drift region: Lightly doped n- region (Thickness depends upon the breakdown voltage of the diode, for higher
breakdown voltage – the drift region is wide. Its function is to absorb the depletion layer of the reverse-biased
p+n- junction)
Constructional Geometry of P-N Diode
The P-N junction diode is created by placing p-type and n-type semiconductor
materials in close physical contact.
This is achieved by diffusing acceptor impurities (p-type) into donor impurities (n-type)
or vice versa.
1.Carrier Diffusion: Majority carriers from both sides diffuse to the opposite side,
where they are in the minority.
2.Depletion Region: The diffusion creates a region of immobile ionized atoms near
the junction, called the depletion region or space charge region.
3.Electric Field & Potential Barrier: The space charge creates an electric field and
potential barrier, which opposes further carrier migration.
4.Thermal Equilibrium: The system reaches thermal equilibrium when the electric
field and potential barrier are sufficient to prevent further carrier movement.
At this stage, no more net migration occurs across the junction.
PN Junction in Steady State
Metallurgical Junction
Na Nd
+ + + + + +
- - - - - -
+ + + + + +
- - - - - -
P - - - - - - + + + + + +
n
- - - - - - + + + + + +
- - - - - - + + + + + +
Space Charge
Region ionized donors
ionized acceptors
E-Field
_ _
+ +
h+ drift = h+ diffusion e- diffusion = e- drift
Conductivity Modulation
of Drift Region
When the power diode is forward biased (anode is made positive with
respect to cathode), the holes will be injected from the p+ region into the
drift region.
Some of the holes combine with the electrons in the drift region. Since
injected holes are large, they attract electrons from the n+ layer.
Thus holes and electrons are injected into the drift region simultaneously.
Hence the resistance of the drift region reduces significantly.
Thus diode current goes on increasing, but drift region resistance remains
constant. So on-state losses in the diode are reduced. This phenomenon
is called Conductivity modulation of the drift region.
Space charge density: electric field potential in p-n
junction under Forward biased condition
When a diode is forward biased (p-side
is more positive than n-side), the following
occurs:
• The potential barrier is reduced,
allowing a large number of minority
carriers to be injected across the
junction.
Abrupt Recovery
Soft Recovery
•Formation Methods:
•Epitaxial Growth Process: Used for voltages below 400V; involves growing
a thin crystal layer over a silicon substrate. This improves device performance,
doping control, and prevents latch-up in CMOS circuits.
•Characteristics:
•Power diodes handle higher power, voltage, and current than ordinary
diodes.
•Their switching speed (frequency response) is lower.
•They can operate at high junction temperatures.
Diffusion & Epitaxial Growth process
Diffusion process
Power Diode:
(a) Simplified structure (b) Circuit symbol (c) Current limits
(d) Voltage limits (e) Safe Operating Area
Power Diodes with High Power Ratings:
• Requirements: Conduct several kA in the forward direction with
minimal power loss and block several kV in the reverse direction.
• Challenges:
– A wide depletion layer is needed to limit electric field strength and prevent
impact ionization, but this increases resistivity and power loss in the forward
direction.
– Increasing doping reduces forward resistance but lowers reverse breakdown
voltage.
• Solution: A lightly doped drift layer of appropriate thickness is
placed between heavily doped p+ and n+ layers to balance forward
resistance and reverse blocking voltage, resolving the contradiction.
Construction of Power Semiconductor Diodes
For more than 400V , DIFFUSION process. Cross-sectional view of power diode
For less than 400V ratings, EPITAXIAL growth process
Constructional Structure of Power Semiconductor Diodes
• Breakdown Prevention in Power Semiconductor
Diodes:
• Zigzag Boundary Effect: Impurities diffuse faster
vertically, causing variable curvature in the
depletion layer boundary.
– Smaller curvature increases the electric field
locally, leading to a lower breakdown voltage.
• Solution:
– Guard Rings: P-type rings are introduced to
control the radius of curvature. Their depletion
layers merge with the junction's depletion layer,
preventing small curvature and increasing
breakdown strength.
– Silicon Dioxide Coating: This coating further helps
control the electric field at the surface, improving
performance.
2.Diode Types:
•Non-Punch Through Diode:
•The n- drift layer thickness is greater than the
depletion layer width at breakdown.
•The depletion region does not reach the n+ cathode. (a) Non-punch through type
•Electric field: Non-uniform, highest at the p+ n-
junction, and reduces to zero at the depletion region's
end.
•Punch Through Diode:
•The n- drift layer thickness is less than the depletion
layer width at breakdown.
•The depletion layer spans the entire drift region
and contacts the n+ cathode.
•Electric field: Uniform, providing expected results.
Forward current & voltage waveforms of a power diode during Turn On operation .
Turn OFF behavior of a Power Diode
1. Reverse Recovery Current (Irr):
• Diode current overshoots zero and grows in
the negative direction to a peak reverse
recovery current Irr.
2. Recovery Voltage Behavior:
• Voltage remains steady until the diode current
reaches reverse recovery level.
3. Total Recovery Time (trr):
• Reverse recovery duration is a few tens of
microseconds.
4. Snappiness Factor (S):
• If the reverse current falls too sharply (low S),
circuit inductance can cause dangerous
overvoltage (Vrr).
• Snappiness Factor (S) depends on:
• Drift region width
• Doping level
• Carrier lifetime