Power Electronics and Drives

LECTURE#03
Power Semiconductor Diode
 Structure of a Power Diode
The structure of a typical power diode is given in the below diagram:

Substrate – Cathode of the diode (Heavily doped and thickness is

Anode – Heavily doped p+ region, forms p-n junction (thickness is

Drift region: Lightly doped n- region (Thickness depends upon the breakdown voltage of the diode, for higher
breakdown voltage – the drift region is wide. Its function is to absorb the depletion layer of the reverse-biased
p+n- junction)
 Constructional Geometry of P-N Diode
The P-N junction diode is created by placing p-type and n-type semiconductor
materials in close physical contact.
This is achieved by diffusing acceptor impurities (p-type) into donor impurities (n-type)
or vice versa.

1.Carrier Diffusion: Majority carriers from both sides diffuse to the opposite side,
where they are in the minority.

2.Depletion Region: The diffusion creates a region of immobile ionized atoms near
the junction, called the depletion region or space charge region.

3.Electric Field & Potential Barrier: The space charge creates an electric field and
potential barrier, which opposes further carrier migration.

4.Thermal Equilibrium: The system reaches thermal equilibrium when the electric
field and potential barrier are sufficient to prevent further carrier movement.
At this stage, no more net migration occurs across the junction.
 PN Junction in Steady State
Metallurgical Junction
Na Nd
+ + + + + +
- - - - - -
+ + + + + +
- - - - - -
P - - - - - - + + + + + +
n
- - - - - - + + + + + +
- - - - - - + + + + + +

Space Charge
Region ionized donors
ionized acceptors

E-Field
_ _
+ +
h+ drift = h+ diffusion e- diffusion = e- drift
 Conductivity Modulation
of Drift Region
 When the power diode is forward biased (anode is made positive with
respect to cathode), the holes will be injected from the p+ region into the
drift region.
 Some of the holes combine with the electrons in the drift region. Since
injected holes are large, they attract electrons from the n+ layer.
 Thus holes and electrons are injected into the drift region simultaneously.
Hence the resistance of the drift region reduces significantly.
 Thus diode current goes on increasing, but drift region resistance remains
constant. So on-state losses in the diode are reduced. This phenomenon
is called Conductivity modulation of the drift region.
Space charge density: electric field potential in p-n
junction under Forward biased condition
When a diode is forward biased (p-side
is more positive than n-side), the following
occurs:
• The potential barrier is reduced,
allowing a large number of minority
carriers to be injected across the
junction.

• Injected minority carriers recombine

with majority carriers as they diffuse
into the electrically neutral drift region.

• The excess carrier density in both p

and n regions decreases exponentially
with distance, characterized by the
"minority carrier diffusion length".
This diffusion length determines how far
the injected minority carriers travel before
recombining.
Space charge density: electric field potential in p-n
junction under reverse biased condition

At the edge of the depletion region:

• Minority carriers diffuse toward
the depletion region and are
swept by the electric field to the
opposite side, creating a small
leakage current.
• Electron-hole pair generation
adds to this leakage current,
known as the diode's reverse
saturation current.
• When the reverse voltage
exceeds a threshold, the reverse
current increases rapidly. This
condition, called "reverse
breakdown", occurs due to
impact ionization.
 Reverse Recovery Time
IF
trr= ( t2 - t0 )
t2
t0
VR
IRM
VRM

• When a diode is switched quickly from forward to reverse bias, it

still continues to conduct due to the minority carriers which
remains in the p-n junction.
• The minority carriers require finite time, i.e, trr (reverse recovery
time) to recombine with opposite charge and neutralise.
• This time is called reverse recovery time of the diode.
• Effects of reverse recovery are increase in switching losses, increase
in voltage rating, over-voltage (spikes) in inductive loads.
 Reverse Recovery Characteristics: Soft Recovery

Abrupt Recovery

Soft Recovery

ta: time to remove the charge stored in junction’s depletion region

tb : time to remove the charge stored in the bulk semiconductor material
Reverse recovery time = trr = ta+tb, Peak Reverse Current = IRR = ta(di/dt)
Power Semiconductor Diode …Classifications
• Power diodes are classified according to
– Manufacturing Process,
– Operating Characteristics
– Constructional features,
– Power Ratings,
– Switching Characteristics,
– Reverse Recovery Time,
– Application wise
• General purpose power diodes
• Fast recovery power diodes
• Schottky power diodes
 Power Semiconductor Diodes …Manufacturing process

•Power diodes have a PN-junction similar to ordinary diodes, but their

construction and packaging differ.

•Formation Methods:

•Diffusion Process: Used for voltages above 400V; involves molecule

transport from high to low concentration, ensuring gradual mixing and desired
characteristics.

•Epitaxial Growth Process: Used for voltages below 400V; involves growing
a thin crystal layer over a silicon substrate. This improves device performance,
doping control, and prevents latch-up in CMOS circuits.

•Characteristics:
•Power diodes handle higher power, voltage, and current than ordinary
diodes.
•Their switching speed (frequency response) is lower.
•They can operate at high junction temperatures.
 Diffusion & Epitaxial Growth process

Diffusion process

Epitaxial Growth process

Power Semiconductor Diode Operating Characteristics

Power Diode:
(a) Simplified structure (b) Circuit symbol (c) Current limits
(d) Voltage limits (e) Safe Operating Area
 Power Diodes with High Power Ratings:
• Requirements: Conduct several kA in the forward direction with
minimal power loss and block several kV in the reverse direction.
• Challenges:
– A wide depletion layer is needed to limit electric field strength and prevent
impact ionization, but this increases resistivity and power loss in the forward
direction.
– Increasing doping reduces forward resistance but lowers reverse breakdown
voltage.
• Solution: A lightly doped drift layer of appropriate thickness is
placed between heavily doped p+ and n+ layers to balance forward
resistance and reverse blocking voltage, resolving the contradiction.
 Construction of Power Semiconductor Diodes

For more than 400V , DIFFUSION process. Cross-sectional view of power diode
For less than 400V ratings, EPITAXIAL growth process
Constructional Structure of Power Semiconductor Diodes
• Breakdown Prevention in Power Semiconductor
Diodes:
• Zigzag Boundary Effect: Impurities diffuse faster
vertically, causing variable curvature in the
depletion layer boundary.
– Smaller curvature increases the electric field
locally, leading to a lower breakdown voltage.
• Solution:
– Guard Rings: P-type rings are introduced to
control the radius of curvature. Their depletion
layers merge with the junction's depletion layer,
preventing small curvature and increasing
breakdown strength.
– Silicon Dioxide Coating: This coating further helps
control the electric field at the surface, improving
performance.

Use of guard ring to improve the breakdown strength of power diode

 Power Diode Bias Conditions
Non-Punch Through vs. Punch Through Power Diodes:

1.Neutrality Condition: The number of ionized atoms in the p+

and n+ regions must balance. Since NdK > NaA, the depletion
region extends into the lightly doped n- drift region (NdD).

2.Diode Types:
•Non-Punch Through Diode:
•The n- drift layer thickness is greater than the
depletion layer width at breakdown.
•The depletion region does not reach the n+ cathode. (a) Non-punch through type
•Electric field: Non-uniform, highest at the p+ n-
junction, and reduces to zero at the depletion region's
end.
•Punch Through Diode:
•The n- drift layer thickness is less than the depletion
layer width at breakdown.
•The depletion layer spans the entire drift region
and contacts the n+ cathode.
•Electric field: Uniform, providing expected results.

(b) punch through type.

 Turn ON behavior of a power Diode
• Power Diodes are used in circuits with di/dt
limiting inductors.
• Power Diodes take finite time to make
transition from reverse bias to forward bias
condition (switch ON) & vice versa (switch OFF).
Forward Recovery Time (tfr):
•Time taken for diode voltage to drop to a defined value
after forward current starts.
•Typical value: within 10 μs.
Forward Recovery Voltage (vfr):
•Transient voltage spike during turn-on, higher than
steady-state forward voltage.
•Depends on di/dt (rate of current change).
•Typical range: 10–30V.
Applications:
•di/dt limiting inductors are used in circuits to reduce
stress.
•In power converters (e.g., with GTO switches), high
transient voltage may damage the main power switch.

Forward current & voltage waveforms of a power diode during Turn On operation .
 Turn OFF behavior of a Power Diode
1. Reverse Recovery Current (Irr):
• Diode current overshoots zero and grows in
the negative direction to a peak reverse
recovery current Irr.
2. Recovery Voltage Behavior:
• Voltage remains steady until the diode current
reaches reverse recovery level.
3. Total Recovery Time (trr):
• Reverse recovery duration is a few tens of
microseconds.
4. Snappiness Factor (S):
• If the reverse current falls too sharply (low S),
circuit inductance can cause dangerous
overvoltage (Vrr).
• Snappiness Factor (S) depends on:
• Drift region width
• Doping level
• Carrier lifetime

Turn OFF characteristics of a power diode

 General Purpose Power diode
• General purpose power diode is a typical two-terminal pn-junction diode,
manufactured by Diffusion process.
• Used in low power applications where recovery time (slow response) is
not an issue.
• Diode Rectifiers
• Converters for a low input frequency up to 1 KHz.
• Line Commutated Converters
• On state voltage: very low (below 1V)
• Large trr (about 25us) (very slow response)
• Very high current carrying ratings (more than 3kA - up to 5kA)
• Very high voltage blocking ratings (50V to 6kV)
• High forward voltage drop (barrier potential is about 1.2V).
• Low switching frequency (Max 1KHz)
• Used in line-frequency (50/60Hz) applications such as rectifiers
General Purpose Power diode Biasing
 Fast Recovery Power Diode
• Diodes are designed to be used in high frequency
circuits in combination with controllable switches
where a small reverse recovery time is needed.
• Low reverse recovery time (faster switching),
normally less than 5uS.
• Very high forward voltage drop (barrier potential
is about 1.5V).
• High Current handling capacities (1A to 1100A).
• High Voltage blocking capabilities (50v- 3kV).
• For high rating (more than 400V), these diodes
are manufactured by DIFFUSION process
– Recovery time is controlled by Platinum or
Gold diffusion.
• For less than 400V ratings, EPITAXIAL diodes
provides very fast recovery time.
– Epitaxial diodes have a very narrow base
width resulting in recovery time of about
50nS.
• High switching frequency (Max 20KHz)
Fast Recovery Power Diode Characteristics
• The major field of applications is in electrical power
conversion i.e., in free-wheeling ac-dc and dc-ac
converter circuits.
• Use of fast recovery diodes are preferable for free-
wheeling in SCR circuits because of low recovery loss,
lower junction temperature and reduced di/dt
• These diodes are primarily used in communication
circuits above 1 GHz (high frequency circuits).
 Schottky Power diodes
• Schottky diode is a semiconductor diode with a low forward
voltage and a very fast switching action .
– Reverse recovery time is almost zero (in ideal conditions).
• Schottky diode use a Metal–Semiconductor junction as Schottky
barrier, instead of a semiconductor junction in a conventional
diodes.
• Schottky diode is a majority carrier semiconductor device.
• When a Schottky diode is forward biased, free electrons on the N-
side gain enough energy and travel to the metal side and cause a
forward current,
– since metal does not have any boles, there is no charge storage,
which results in ZERO Reverse recovery time.
 Schottky diodes: Characteristics
• Power Schottky diodes are available up to forward
current ratings of 300A.
• The main limitation of Schottky diode is their low reverse
voltage (Limited blocking voltage) in order of 30 to 100V.
• Very low forward voltage drop (barrier potential is of 0.15
to 0.45V) typically 0.3V
• Used in low voltage, high current such as switched mode
power supplies.
• The operating frequency may be as high 100-300 kHz as
the device is suitable for high frequency application.
 Power Semiconductor Diodes Comparison
General Purpose Diodes Fast Recovery Diodes Schottky Diodes

Up to 6000V & 3500A Up to 3000V and 1100A Up to 100V and 300A

Reverse recovery time – Reverse recovery time – Reverse recovery time –

High Low Extremely low.

trr 25 s trr 0.1 s to 5 s trr a few nano sec

Turn off time – High Turn off time – Low Turn off time – Extremely
low

Switching frequency – Low Switching frequency – Switching frequency –

(Max 1KHz) High (Max 20KHz) Very high (Max 30KHz)
Vfd=0.7 to 1.2V Vfd=0.8 to 1.5V Vfd=0.15 to 4.5V