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Finfet Presentation - Copy

FinFET, a type of non-planar transistor, offers advantages over traditional MOSFETs, including improved performance, lower power consumption, and better control of short-channel effects. The presentation covers the structure, fabrication process, characteristics, advantages, disadvantages, and applications of FinFET technology. Despite its challenges in fabrication, FinFET has become crucial in modern microprocessors and integrated circuits.

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SUBBARAO
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9 views

Finfet Presentation - Copy

FinFET, a type of non-planar transistor, offers advantages over traditional MOSFETs, including improved performance, lower power consumption, and better control of short-channel effects. The presentation covers the structure, fabrication process, characteristics, advantages, disadvantages, and applications of FinFET technology. Despite its challenges in fabrication, FinFET has become crucial in modern microprocessors and integrated circuits.

Uploaded by

SUBBARAO
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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PPT - PRESENTATION

FINFET

Presented By : Subbarao.V
FINFET : Fin field effect transistor :
Outlines :
Ø Introduction about finfet & Basics of finfet
 Why we coming to finfet over mosfet.
 Difference between mosfets & finfet
 Short-channel effect
 Structure of finfet
 Double gate & tri gate finfet
 SG gate & IG gate finfet
 Top view of finfet
 Fabrication process of finfet
 Characteristics of finfet
 Advantages of finfet
 Disadvantages of finfet
 Applications of finfet
 Challenges and Future Prospects :
INTRODUCTION AND BASICS OF FINFET :
 FinFET is a type of non-planar or “3D” transistor that is used in the design of modern
processors.
 It is a type of multi-gate mosfet and used as amplifier and a switch
 It is widely used over traditional planar transistor design.
 Fin is channel in B/W source and drain
 Finfet can have two or four or more fin in same structure.
 The FinFET devices have significantly faster switching times and higher current density
than planar CMOS
 Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s,
and became the dominant gate design at 14nm, 10 nm and 7 nm and 3nm process nodes.
Why we coming to finfet over mosfet.

Ø FinFET technology offers several benefits over traditional planar transistor design.

Ø The ability of FinFET to mitigate short-channel effects, which become more pronounced
as devices continue to scale down in size. Short-channel effects can lead to increased
power consumption and decreased performance, issues that FinFET can effectively
address the improves the switching and reduce the power consumption.

 More transistors are required to achieve this, which leads to larger chips. However, for
practical reasons, it is crucial to keep the area about the same.

 In short, FinFET devices display superior short-channel behavior, have considerably fast
switching times, and higher current density than conventional MOSFET technology
Short-channel effect :
Short-channel effects occur when the channel length is the
same order of magnitude as the depletion-layer widths of the
source and drain junction. In MOSFETs, channel lengths must be
greater than the sum of the drain and source depletion widths
to avoid edge effects. Otherwise, a number of effects appear.

1. “Off-state” leakage current.


2. Impact ionization, in which a charge carrier can be affected
by other charge carriers;
3. Velocity saturation/mobility degradation;
4. Drain-induced barrier lowering (DIBL), which is caused by
encroachment of the drain depletion region into the channel;
5. Drain punch through, whereby current flows regardless of
gate voltage-a phenomenon that can occur if the drain is at high
enough voltage compared to the source and the depletion
region around the drain extends to the source;
6. Surface scattering;
7. Channel length modulation;
8. Threshold voltage roll-off.
STRUCTURE OF
FINFET :
DOUBLE GATE
AND TRI-GATE
FINFET :
• Double gate :
With oxide and hard mask
• Triple gate :
Without oxide and hard
mask
SG & IG FINFET :
SG & IG Differences:

Short-gate Finfet Open-gate Finfet


It is 3T finfet It is 4T finfet
Front and back gates are shorted Front and back gates are isolated
Threshold voltage cannot be controlled Threshold voltage can be controlled
externally externally
Less area occupied More area occupied
TOP VIEW OF FINFET
FABRICATION PROCESS OF FINFET :
FABRICATION PROCESS STEPS OF FINFET :

 Substrate: In fabrication process, first lightly doped p-type substrate is fabricated, and
hard mask is fabricated over the substrate.
 Fin etch: Isotropic process fins are formed.
 Oxide deposition: Over the fins the oxide layers are formed to isolate the fins.
 Planarization: It is planarized by chemical mechanical polishing process.
Recess – etch : Removing hard mask
 Gate oxide: To isolate the channel from the gate by thermal oxidation process gate
and oxide is deposited over the fins.
 Deposition of gate: Highly doped N+ type silicon gate layer is formed & deposited
over the fins.
Working of FinFET:
• In planar FET, the Gate is placed above the channel and there is leakage current flowing
from source to drain even when the gate is off
• FinFET can have two to four fins in the same structure and this form of gate structure
provides improved electrical control over the channel conduction
• The 'fins' form the source and drain, they enable more volume than a traditional planar
transistor.
• There is very little current to leak through the body when the device is in the 'off' state,
which allows the use of lower threshold voltages for better performance and lower
power dissipation
• The gate orientation is at right angles to the vertical fin. And to traverse from one side of
the fin to the other it wraps over the fin.
• It enables it to interface with three side of the fin or channel.
VI-
Charecteristi
cs of FinFET
ADVANTAGES, DISADVANTAGES & APPLICATIONS OF FINFET:
Advantages Disadvantages
Low power consumption Fabrication cost is higher than cmos
Operating at low voltages Controlling fin depth is difficult
Operating speed is higher
Static leakage current is reduced up to 90%

Applications:
 Used in microprocessors & micro-controllers
 Used in smart phones & computers.
Challenges and Future Prospects :
• FinFET technology is not without challenges. For instance, the three-dimensional structure
makes fabrication more complex and costly. Additionally, as device dimensions continue to
shrink, even FinFETs will eventually encounter physical and performance limitations.

Conclusion : FinFET technology represents a significant evolution in transistor design,


offering enhanced performance, lower power consumption, and increased packing
density over traditional planar transistors. Despite the challenges associated with their
fabrication, FinFETs have become an essential component of modern integrated circuits.

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