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Group9_ppt

The document outlines Experiment-1(A) focused on characterizing an n-p-n transistor, including objectives such as observing I-V characteristics and extracting device model parameters for amplifier design. It details the experimental setup, measurements, calculations, and key takeaways regarding transistor behavior and design considerations. Challenges faced during the experiment and potential improvements for future experiments are also discussed.

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atulsingh17102004
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4 views

Group9_ppt

The document outlines Experiment-1(A) focused on characterizing an n-p-n transistor, including objectives such as observing I-V characteristics and extracting device model parameters for amplifier design. It details the experimental setup, measurements, calculations, and key takeaways regarding transistor behavior and design considerations. Challenges faced during the experiment and potential improvements for future experiments are also discussed.

Uploaded by

atulsingh17102004
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Experiment-1(A)

Characterization and finding parameters of a n-p-


n transistor
Electronics Circuits Lab Group- 9

Submitted by -

Name: Aryan Singh Roll No: 23IE10009


Name: Atul Singh Roll No: 23IE10010
Name: Bhukya Roll No: 23IE10012
Praveen
Circuit
Diagram

Fig 1: Circuit Diagram of Exercise 1(a)


Objective
• To observe I-V characteristic of a Bipolar
transistor
• To extract values of device model parameters
from the observed I-V characteristic
• Use the model parameters to design a simple
common emitter amplifier.
• Simulate performance of the amplifier
Snapshot of Experimental Setup
Measurements: I(c)-V(c) characteristic graphs

i) For different values of Rb the graph of V(c) and


I(r2)=I(c)
Snapshot of Experimental Setup
Measurements: I(c)-V(b) characteristic graphs

i) For different values of Rb the graph of V(b) and I(c)


Measurements: I(b)-V(b) characteristic graphs

i) For different values of Rb the graph of V(b) and


I(b)
Graph: Ic vs Vce

Rb=110Ko I(c) vs V(c)


7
hm 6

0
0 2 4 6 8 10 12 14 16 18
Graph : Ic vs Vbe
Rb = ic vs vbe
256 1.11
Kohm 1.105 1.103
1.105 1.105

1.1
1.099
1.1 1.097
1.095
1.095 1.092

1.09 1.088

1.085

1.08

1.075
0.618 0.62 0.622 0.624 0.626 0.628 0.63
Graph : Ib vs Vbe
Rb =
ib vs vbe
256 0.05
Kohm 0.045 0.041
0.044

0.04
0.035
0.035
0.03 0.027
0.025 0.023
0.02
0.02
0.015
0.015 0.012
0.01 0.008

0.005
0
0.618 0.62 0.622 0.624 0.626 0.628 0.63
Calculation: Formula used
Formulas used:

1. Transconductance (gm): gm = Ic / V_T Where: Ic: Collector current (in amperes) V_T: Thermal
voltage (26 mV at room temperature)
2. Output Resistance (ro): ro = |V_A| / Ic Where: V_A: Early voltage (in volts) Ic: Collector current
(in amperes)
3. Base-Emitter Resistance (rpie): rpie = beta / gm Where: beta: Current gain of the transistor
gm: Transconductance
4. Current Gain (beta): beta = Ic / Ib Where: Ic: Collector current (in amperes) Ib: Base current (in
amperes)
5. Reverse Saturation Current (Isb): Isb = Ic * e^(-V_BE / V_T) Where: Ic: Collector current (in
amperes) V_BE: Base-emitter voltage (in volts) V_T: Thermal voltage (26 mV) 6)Beta=gm*rpie
Calculation
Key Take Aways
• Helps understand the transistor's behavior in different
regions (Active, Saturation, and Cutoff) using the I-V
Characteristics graphs.
• Determines the output resistance (ro) and affects the
transistor’s gain in amplifier applications.
• Proper selection of base resistance (Rb) ensures the
transistor stays in the active region and prevents
excessive current that could damage it.
• The extracted parameters (gm, ro, rπ) are essential for
designing a stable and efficient common-emitter
amplifier.
Challenges
• Breadboards have inherent contact resistance and causes unstable connections,
affecting the accuracy of measurements and sometimes gives wrong values.
• Ensuring the transistor remains in the active region requires very careful biasing.

Potential Improvements
• Keeping wires short helps reduce stray inductance and resistance.
• Breadboards introduce parasitic effects; a printed circuit board (PCB) or a
well-laid-out perf board with proper soldering minimizes noise and
connection issues.
• Using a microcontroller (e.g., Arduino) with ADC for automated Vce and Ic
readings instead of manually recording values.

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