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MOSFET[1]

A MOSFET is a four-terminal field-effect transistor that controls current flow between the source and drain terminals using a voltage applied to the gate terminal. It operates in three regions: cut-off (no current flow), ohmic (current increases with voltage), and saturation (current remains constant despite voltage increase). There are various types of MOSFETs, including n-channel and p-channel, each with unique characteristics regarding their operation and current flow behavior.

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2 views

MOSFET[1]

A MOSFET is a four-terminal field-effect transistor that controls current flow between the source and drain terminals using a voltage applied to the gate terminal. It operates in three regions: cut-off (no current flow), ohmic (current increases with voltage), and saturation (current remains constant despite voltage increase). There are various types of MOSFETs, including n-channel and p-channel, each with unique characteristics regarding their operation and current flow behavior.

Uploaded by

anuragraj1357
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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MOSFET

Field-Effect Transistor: A transistor in which the voltage on


one terminal (the gate) creates a field that allows or disallows
conduction between the other two terminals (the source and
drain).
MOSFET
A MOSFET is a four-terminal device having source(S), gate (G), drain (D) and body (B) terminals. In
general, The body of the MOSFET is in connection with the source terminal thus forming a three-terminal
device such as a field-effect transistor. MOSFET is generally considered as a transistor and employed in
both the analog and digital circuits. This is the basic introduction to MOSFET.
The functionality of MOSFET depends on the electrical variations happening in the channel width along with
the flow of carriers (either holes or electrons). The charge carriers enter into the channel through the source
terminal and exit via the drain.
The width of the channel is controlled by the voltage on an electrode which is called the gate and it is
located in between the source and the drain. It is insulated from the channel near an extremely thin layer of
metal oxide. The MOS capacity that exists in the device is the crucial section where the entire operation is
across this.
Its thermal stability and other general
characteristics make it extremely
popular in computer circuit design

It is the insulating layer of SiO2 in the


MOSFET construction that accounts for the
very desirable high input impedance of the
device. Because of the very high input
impedance, the gate current I G is
essentially 0 A for dcbiased configuratio
MOSFET
In general, any MOSFET is seen to exhibit three
operating regions viz.,
1. Cut-Off:
Cut-off region is a region in which the MOSFET will
be OFF as there will be no current flow through it. In
this region, MOSFET behaves like an open switch
and is thus used when they are required to function
as electronic switches.
2. Ohmic
Ohmic or linear region is a region where in the
current IDS increases with an increase in the value of
VDS. When MOSFETs are made to operate in this
region, they can be used as amplifiers.
3.Saturation
In saturation region, the MOSFETs have their
IDS constant inspite of an increase in VDS and occurs
once VDS exceeds the value of pinch-off voltage VP.
Under this condition, the device will act like a closed
switch through which a saturated value of IDS flows.
As a result, this operating region is chosen whenever
MOSFETs are required to perform switching
operations.
n-channel Depletion-type MOSFET
n-channel Depletion-type MOSFET

• The transfer characteristics of n-channel depletion MOSFET shown by Figure 3a indicate that the device has
a current flowing through it even when V GS is 0V. This indicates that these devices conduct even when the gate
terminal is left unbiased, which is further emphasized by the V GS0 curve of Figure b.
• Under this condition, the current through the MOSFET is seen to increase with an increase in the value of V DS
(Ohmic region) untill VDS becomes equal to pinch-off voltage V P. After this, IDS will get saturated to a particular
level IDSS (saturation region of operation) which increases with an increase in V GS i.e. IDSS3 > IDSS2 > IDSS1, as VGS3
> VGS2 > VGS1.
• Further, the locus of the pinch-off voltage also shows that V P increases with an increase in V GS. However it is to
be noted that, if one needs to operate these devices in cut-off state, then it is required to make V GS negative and
p-channel Depletion-type MOSFET
p-channel Depletion-type MOSFET
• The transfer characteristics of p-channel depletion
mode MOSFETs (Figure 4a) show that these devices
will be normally ON, and thus conduct even in the
absence of VGS. This is because they are characterized
by the presence of a channel in their default state due
to which they have non-zero IDS for VGS = 0V, as
indicated by the VGS0 curve of Figure 4b. Although the
value of such a current increases with an increase in
VDS initially (ohmic region of operation), it is seen to
saturate once the VDS exceeds VP (saturation region of
operation).
• The value of this saturation current is determined by
the VGS, and is seen to increase in negative direction as
VGS becomes more and more negative. For example, the
saturation current for VGS3 is greater than that for VGS2
which is however greater when compared to that for
VGS1. This is because VGS2 is more negative when
compared to VGS1, and VGS3 is much more negative when
compared to either of them. Next, one can also note
from the locus of pinch-off point that even V P starts to
become more and more negative as the negativity
associated with the VGS increases.
• Lastly, it is evident from Figure 4a that in order to
switch these devices OFF, one needs to increase V GS
n-channel Enhancement-type MOSFET
n-channel Enhancement-type MOSFET

• Figure a shows the transfer characteristics (drain-to-source current I DS versus gate-to-source voltage VGS) of n-
channel Enhancement-type MOSFETs. From this, it is evident that the current through the device will be
zero until the VGS exceeds the value of threshold voltage V T. This is because under this state, the device will be
void of channel which will be connecting the drain and the source terminals.
• Under this condition, even an increase in V DS will result in no current flow as indicated by the corresponding
output characteristics (IDS versus VDS) shown by Figure 1b. As a result this state represents nothing but the cut-
off region of MOSFET’s operation.
• Next, once VGS crosses VT, the current through the device increases with an increase in I DS initially (Ohmic
region) and then saturates to a value as determined by the V GS (saturation region of operation) i.e. as V GS
increases, even the saturation current flowing through the device also increases.This is evident by Figure 1b
where IDSS2 is greater than IDSS1 as VGS2 > VGS1, IDSS3 is greater than IDSS2 as VGS3 > VGS2, so on and so forth. Further,
p-channel Enhancement-type MOSFET
p-channel Enhancement-type MOSFET

• Figure a shows the transfer characteristics of p-type enhancement MOSFETs from which it is evident that
IDS remains zero (cutoff state) untill VGS becomes equal to -VT.This is because, only then the channel will be
formed to connect the drain terminal of the device with its source terminal. After this, the I DS is seen to
increase in reverse direction (meaning an increase in I SD, signifying an increase in the device current which
will flow from source to drain) with the decrease in the value of V DS.
• This means that the device is functioning in its ohmic region wherein the current through the device
increases with an increase in the applied voltage (which will be V SD).However as VDS becomes equal to –VP,
the device enters into saturation during which a saturated amount of current (I DSS) flows through the device,
as decided by the value of VGS.
• Further it is to be noted that the value of saturation current flowing through the device is seen to increase as
the VGS becomes more and more negative i.e. saturation current for V GS3 is greater than that for VGS2 and that

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