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03-Memory

The document discusses memory design for SOC and board-based systems, focusing on cache performance, memory types, and design considerations. It outlines factors affecting cache and memory performance, including cache miss rates and memory access protocols. Additionally, it introduces various memory technologies, including SRAM and DRAM, and presents a performance model for evaluating memory systems.

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4 views

03-Memory

The document discusses memory design for SOC and board-based systems, focusing on cache performance, memory types, and design considerations. It outlines factors affecting cache and memory performance, including cache miss rates and memory access protocols. Additionally, it introduces various memory technologies, including SRAM and DRAM, and presents a performance model for evaluating memory systems.

Uploaded by

jayasakthi.ece
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Memory Design: SOC and

Board-Based Systems
Cache and Memory
• cache
• performance
• cache partitioning
• multi-level cache

• memory
• off-die memory designs
Outline for memory design
Area comparison of memory
tech.
System environments and
memory
Performance factors
Virtual
address

Factors:
1. physical word size
• processor  cache
2. block / line size
• cache  memory
3. cache hit time
• cache size, organization
4. cache miss time
• memory and bus
5. virtual-to-real translation time
6. number of processor requests per cycle
Design target miss rates

beyond 1MB
double the size
half the miss rate
System effects limit hit rate

• operating System affects the miss ratio


• about 20% increase
• so does multiprogramming (M)
• miss rates may not be affected by increased cache size
• Q = no. instructions between task switches
System Effects
• Cold-Start
• short transactions are
created frequently and
run quickly to
completion
COLD
• Warm-Start
• long processes are
executed in time slices
Some common cache types
Multi-level caches: mostly on die

• useful for matching processor to memory


• generally at least 2-level
• For microprocessors L1 at frequency of pipeline
and L2 at slower latency
• often use 3-level
• Size limited by access time and improved cycle times
Cache partitioning:
scaling effect on cache access time

• access time to a cache is approximately


access time (ns) = (0.35 + 3.8f +(0.006 +0.025 f) C) x (1 +
0.3(1 - 1/A)) where
• f is the feature size in microns
• C is the cache capacity in K bytes
• A is the associativity, e.g. direct map A = 1
• for example, at f = 0.1u, A = 1 and C = 32 (KB) the access
time is 1.00 ns
• problem with small feature size: cache
access time, not cache size
Minimum cache access time
1 array, larger sizes use multiple arrays (interleaving)

L3: multiple
256KB arrays

L2 usually less than


512KB (interleaved from
smaller arrays)

L1 usually less
than 64kB
Analysis: multi-level cache miss rate
• L2 cache analysis by statistical inclusion
• if L2 cache > 4 x size of the L1 cache then
• assume statistically: contents of L1 lies in L2
• relevant L2 miss rates
• local miss rate: No. L2 misses / No. L2 references
• global Miss Rate: No. misses / No. processor ref.
• solo Miss Rate: No. misses without L1/No. proc. ref.
• Inclusion => solo miss rate = global miss rate
• miss penalty calculation
• L1 miss rate x (miss in L1, hit in L2 penalty) plus
• L2 miss rate x ( miss in L1, miss in L2 penalty - L1 to L2 penalty)
Multi-level cache example

L1 L2 Memory

Miss Rate 4% 1%
- delays:
Miss in L1, Hit in L2 2 cycles
Miss in L1, Miss in L2 15 cycles
- assume one reference/instruction
L1 delay is 1 ref/instr x .04 misses/ref x 2 cycles/miss = 0.08 cpi
L2 delay is 1 ref/instr x .01 misses/ref x (15-2) = 0.13 cpi
Total effect of 2 level system is 0.08 + 0.13 = 0.29 cpi
Memory design
• logical inclusion
• embedded RAM
• off-die: DRAM
• basic memory model
• Strecker’s model
Physical memory system
Hierarchy of caches
Name ? Size Access Transfer
size
L0 Registers <256 <1 cycle word
words
L1 Core local <64K <4 cycle Line
L2 On Chip <64M <30 cycle Line
L3 DRAM on <1G <60 cycle >= Line
Chip
M0 Off Chip
Cache
M1 Local Main <16G <150 cycle >= Line
Memory

M2 Cluster
Memory
Hierarchy of caches
• Working Set – how much memory an “iteration” requires
• if it fits in a level then that will be the worst case
• if it does not, hit rate typically determines performance
• double the cache level size half the miss rate – good rule of
thumb
• if 90% hit rate, 10x memory access time, performance 50%
• and that’s for 1 core
Logical inclusion
• multiprocessors with L1 and L2 caches
• Important: L1 cache does NOT contain a line
• sufficient to determine
• L2 cache does not have the line
• need to ensure
• all the contents of L1 are always in L2
• this property: Logical Inclusion
Logical inclusion techniques
• passive
• control Cache size, organization, policies
• no. L2 sets no. L1 sets
•  size
L2 set size L1 set
• compatible replacement
 algorithms
• but: highly restrictive and difficult to guarantee
• active
• whenever a line is replaced or invalidated in the L2
• ensure it is not present in L1 or it is evicted from L1
Memory system design outline
• memory chip technology
• on-die or off die
• static versus dynamic:
• SRAM versus DRAM
• access protocol: talking to memory
• synchronous vs asynchronous DRAMs
• simple memory performance model
• Strecker’s model for memory banks
Why BIG memory?
Memory
• many times, computation limited by memory
• not processor organization or cycle time

• memory: characterized by 3 parameters


• size
• access time: latency
• cycle time: bandwidth
Embedded RAM
Embedded RAM density (1)
Embedded RAM density (2)
Embedded RAM cycle time
Embedded RAM error rates
Off-die Memory Module
• module contains the DRAM chips that make up the
physical memory word
• if the DRAM is organized 2n words x b bits and the
memory has p bits/ physical word then the module has
p/b DRAM chips.
• total memory size is then 2n words x p bits
• Parity or Error-Correction Code (ECC) generally required
for error detection and availability
Simple asychronous DRAM array
• DRAM cell
• Capacitor: store charge for
0/1 state
• Transistor: switch capacitor
to bit line
• Charge decays => refresh
required
• DRAM array
• Stores 2n bits in a square
array
• 2n/2 row lines connect to
data lines
• 2n/2 column bit lines
connect to sense amplifiers
DRAM basics
• Row read is destructive
• Sequence
• Read row into SRAM from dynamic memory(>1000 bits)
• Select word (<64 bits)
• Write Word into row (writing)
• Repeat till done with row
• WRITE back row into dynamic memory
DRAM timing
• row and column addresses muxed
• row and column Strobes for timing
Increase DRAM bandwidth
• Burst Mode
• aka page mode, nibble mode, fast page mode
• Synchronous DRAM (SDRAM)
• DDR SDRAM
• DDR1
• DDR2
• DDR3
DDR SDRAM

(Dual Data Rate Synchronous DRAM)


Burst mode
• burst mode
• save most recently accessed row (“page”)
• only need column row + CAS to access within page
• most DDR SDRAMs: multiple rows can be open
• address counter in each row for sequential accesses
• only need CAS (DRAM) or bus clock (SDRAM) for sequential
accesses
Configuration parameters

Parameters for typical DRAM chips used in a 64-bit module


DRAM timing
Physical memory system
Basic memory model
• assume that n processors
• each make 1 request per Tc to one of m memories
• B(n,m)
• number of successes
• Tc
• memory cycle time to the memory
• one processor making n requests per Tc
• behaves as n processors making 1 request per Tc
Achieved vs. offered bandwidth

• offered request rate


• rate at which processor(s) would make requests if memory
had unlimited bandwidth and no contention
Basic terms
• B = B(m,n) or B(m)
• number of requests that succeed each Tc (= average
number of busy modules)
• B: bandwidth normalized to Tc
• Ts: more generalized term for service time
• Tc = Ts
• BW: achieved bandwidth
• in requests serviced per second
• BW = B / Ts = B(m,n)/ Ts
Modeling + evaluation
methodology
• relevant physical parameters for memory
• word size
• module size
• number of modules
• cycle time Tc (=Ts)
• find the offered Bandwidth
• number of requests/Ts
• find the bottleneck
• performance limited by most restrictive service point
Strecker’s model: compute B(m,n)

• model description
• each processor generates 1 reference per cycle
• requests randomly/uniformly distributed over modules
• any busy module serves 1 request
• all unserviced requests are dropped each cycle
• assume there are no queues
• B(m,n) = m[1 - (1 - 1/m)n]
• relative Performance Prel = B(m,n) / n
Deriving Strecker’s model
• Prob[given processor not reference module]
= (1 – 1/m)
• Prob[no processor references module]
= P[idle]
= (1 – 1/m)n
• Prob[module busy]
= 1 - (1 – 1/m)n
• average number of busy modules is B(m,n)
• B(m,n) = m[1 - (1 - 1/m)n]
Example 1
• 2 dual core processor dice share memory
• Ts = 24 ns
• each die has 2 processors
• sharing 4MB L2
• miss rate is 0.001 misses reference
• each processor makes 3 references/cycle @ 4 GHz
2 x 2 x 3 x 0.001 =0.012 refs/cyc
Ts = 4 x 24 cycles
n = 1.152 processor requests / Ts; if m= 4
success rate B(m,n) = B(4,1.152) = 0.81
Relative Performance = B/n = .81/1.152 =0.7
Example 2

• 8-way interleaved associative data cache


• processor issues 2LD/ST per cycle
• each processor: data reference per cycle = 0.6
• n=2;m=8
• B(m,n) = B(8,1.2) = 1.18
• Relative Performance = B/n = 1.18/1.2 = 0.98
Summary
• cache
• performance, cache partitioning, multi-level cache
• memory chip technology
• on-die or off die
• static versus dynamic:
• SRAM versus DRAM
• access protocol: talking to memory
• synchronous vs asynchronous DRAMs
• simple memory performance model
• Strecker’s model for memory banks

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