Physics and Modeling of Microelectronic Devices

MEL ZG631
Lecture-15
Dr. Nilesh Goel
BITS Pilani Department of Electrical and Electronics
BITS Pilani Dubai Campus
Pilani|Dubai|Goa|Hyderabad
[email protected]

1
Disclaimer

The material in this presentation is gathered from a large number of

textbooks, online and other resources. The copyright is held by the
respective authors. No originality of any nature is claimed here as this
material is available in public domain. The material is arranged in its
present form purely for instructional/educational purposes and should
not be used for any other purpose.
Nilesh Goel
MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 2
MOSFET Structure (p channel)

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 3
MOSFET Structure

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 4
MOSFET and FinFET structure

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 5
Detailed view of MOSFET and FinFET

Spacer Gate
Source Drain

Fin Height

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 6
Explaining FinFET structure

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 7
FinFET structure

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 8
Actual View of MOSFET and FinFET

View I
View III

Planer MOSFET 3D FinFET

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 9
Structure of Gate stack

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 10
Current and Voltage Relationship

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 11
Current and Voltage Relationship
• For small VDS channel is like a resistor for range of VGS.
• gd is called transconductance.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 12
Current and Voltage Relationship

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 13
Family of ID-VDS curves
• In non saturation region (n-channel device)

• In Saturation region (n-channel device)

For p-channel device

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 14
Practice question
Question: Consider an ideal n-channel MOSFET with parameters L=1.25 𝜇m, 𝜇n=650 cm2/V-s,
Cox=6.9x10-8 F/cm2, and VT= 0.65 V. Design the channel width W such that ID(sat) =4 mA for
VGS=5 V.
Solution:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 15
Practice question
Question: Consider an n-channel MOSFET with W=15 𝜇m, L=2 𝜇m and Cox=6.9x10-8 F/cm2.
Assume that the drain current in the non-saturation region for VDS = 0.10V is ID = 35 𝜇A at
VGS=1.5 V and ID=75 𝜇A at VGS= 2.5 V.
Solution:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 16
Energy band diagram of MOSFET
• From source to drain under VGS = 0 and VDS = 0

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 17
Energy band diagram of MOSFET
• From source to drain under VGS = high and VDS = 0

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 18
Energy band diagram of MOSFET
•From source to drain under VGS = 0 and VDS = high
•From source to drain under VGS = high and VDS = high

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 19
Transconductance
• The MOSFET transconductance is defined as the change in drain current with respect to the
corresponding change in gate voltage, or

• For n-channel MOSFET operating in the non-saturation region,

• For n-channel MOSFET in the saturation region

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 20
Substrate bias effect
• Till now we assume substrate is connected with source, while this may not be true always.
• When VSB > 0 then:-

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 21
Substrate bias effect
• If VSB=0, VTH is defined as the condition when 𝜙s=2𝜙fp.
• But now we need 𝜙s=2𝜙fp + VSB for inversion.
• Due to VSB, depletion width in substrate increases and hence

• To reach the threshold condition, the applied gate voltage must be increased. The
change in threshold voltage can be written as

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 22
Practice question
Question: Consider an n-channel silicon MOSFET at T =300 K. Assume the substrate is doped to
Na=3x1016 cm-3 and assume the oxide is silicon dioxide with a thickness of tox= 20 nm. Let
VSB=1 V. Find ΔVT.
Solution:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 23
Outline MOSFET Advanced Concepts
• Non-ideal effects
• Subthreshold conduction
• Channel length modulation
• Mobility Variation
• Velocity saturation
• Ballistic transport
• MOSFET Scaling
• Constant field scaling
• Generalized Scaling
• Threshold Voltage Modifications
• Short channel effects
• Narrow channel effects
• Additional electrical Characteristics

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 24
Non Ideal Effects
Few things and properties of MOSFET we assume ideal till now. Now we see their impact on
MOSFET performance.
ID-VGS of a MOSFET (ideal and actual, linear scale)

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 25
Subthreshold Conduction
ID-VGS of a MOSFET (ideal and actual, linear and log scale)

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 26
Subthreshold Conduction
Energy band diagram of OFF state of MOSFET showing subthreshold conduction.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 27
Channel Length Modulation
Structure of MOSFET showing subthreshold conduction.

For smaller L, 𝛥L is significant.

When L is large the no issues.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 28
Mobility Variation
Charge carriers got scattered by interface scattering at higher electric field. This reduces mobility
of these charge carriers.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 29
Velocity Saturation
We assume constant mobility till now, which means velocity
keeps increasing with electric field. But this is not the case,
velocity saturates as mobility starts decreasing at higher fields.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 30
Ballistic Transport
• This is the case when mean free path between two collision of charge carriers is larger
than the channel length.
• Which means large fraction of charge carriers could travel from source to drain
without experiencing a scattering event.
• Ballistic transport means that carriers travel faster than the average drift velocity or
the saturation velocity, and this effect can lead to very fast devices.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 31
MOSFET Scaling (Constant Field Scaling)
• In this type of scaling, designers ensure that electric field remains same across all
junctions, interfaces etc when dimensions of MOSFET are reduced. Hence voltages
are also scaled accordingly.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 32
MOSFET Scaling (Constant Field Scaling)

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 33
MOSFET Scaling (Generalized Scaling)
• In actual scaling, we are not able to scale the voltages as much as it should be by a
factor ‘k’.
• other factors that do not scale, such as threshold voltage and subthreshold currents.
• Consequences of increased electric fields are reduced reliability and increased
power density.
• As the oxide thickness is reduced and the electric field is increased, gate oxides are
closer to breakdown
• Direct tunneling of carriers through the oxide may be more likely to occur.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 34
VTH Modification
• Additional effects on threshold voltage occur as the devices shrink in size.

• Reduction in channel length increases the transconductance of the MOSFET

• Reduction in channel width increases the packing density in an integrated circuit.

• Reduction in either or both the channel length and channel width can affect the
threshold voltage.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 35
VTH Modification (Short Channel Effects)
Threshold voltage change.
• In long channel device, space charge region due to source and drain in channel is
insignificant. Then gate controls all the charges in the channel.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 36
VTH Modification (Short Channel Effects)
Threshold voltage change.
• In short channel device, space charge region due to source and drain extends in channel.
Then fraction of charge in the channel region controlled by gate reduces and less gate voltage
can invert the channel.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 37
VTH Modification (DIBL)
DIBL is Drain Induced Barrier Lowering. Energy Band Diagram (high VDS and low VGS)

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 38
VTH Modification (Narrow Channel Effects)
• Threshold voltage change.
• As there is additional space charge region to be controlled by gate voltage hence
threshold voltage increases.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 39
VTH Modification
• Threshold voltage change with L and W.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 40
Extra slide for rough work

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 41
 BITS Pilani
Pilani|Dubai|Goa|Hyderabad

Thank You
See you next class
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MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus