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3 views

Module2_Lecturer2_PPT

Uploaded by

yashwanthranganath
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Module II :Avalanche Transit Time Devices

Previous Class Summarization………..

• Avalanche transit-time diode


1) IMPATT mode:
2) TRAPATT mode:
3) BARITT diodes
• Comparison between ATTDs and TEDs
READ DIODE:
-Physical Description of READ DIODE
-Avalanche Multiplication
-Carrier Curent I0(t) and Externat Current Ie(t)
-Output Power and Quality Factor Q
IMPATT diode (IMPact ionization Avalanche Transit-
Time diode)
Today's Class discussion……………..

Physical structures of IMPATT diode


Negative resistance of IMPATT diode
Power output and efficiency of IMPATT diode
Physical structures of IMPATT diode
• Read-type diodes are called IMPATT diodes.
• Read diode made of an n+ -p-i-p+ or p+ -n-i-n+ structure.
• The working mechanism is the interaction of the impact
ionization avalanche and the transit time of charge carriers.
• READ/IMPATT diodes exhibit a differential negative resistance
by two effects:
1. The impact ionization avalanche effect:
It causes the carrier current Io(t) and the ac voltage to be out of
phase by 90°.
2. The transit-time effect:
It further delays the external current Ie(t) relative to the ac
voltage by 90°.
• The first IMPATT operation as reported by Johnston in 1965
from a simple p-n junction.
• Negative resistance of the IMPATT diode can be obtained from
a junction diode with any doping profile.
• Many IMPATT diodes consist of a high doping avalanching
region followed by a drift region.
• The drift region of the field is low enough in the device that the
carriers can traverse through it without avalanching.
Three typical silicon IMPATT
diodes.
Negative Resistance of IMPATT diode
• Small-signal analysis of a Read diode results in the following
expression for
the real part of the diode terminal impedance.
Negative resistance versus transit
angle
• The variation of the negative resistance with the transit angle
when w > Wr is plotted in Fig.
• The peak value of the negative resistance occurs near Ө = π.
• For transit angles larger than π and approaching 3π /2, the
negative resistance of the diode decreases rapidly.
• For practical purposes, the Read-type IMPATT diodes work well
only in a frequency range around the π transit angle. That is,
Power Output and Efficiency of IMPATT Diode
Power Output of IMPATT Diode :
• For a uniform avalanche the maximum voltage that can be applied
across the diode is given by

• where L is the depletion length and Em is the maximum electric


field. This maximum applied voltage is limited by the breakdown
voltage.
• The maximum current that can be carried by the diode is also
limited by the avalanche breakdown process.
• For the current in the space-charge region causes an increase in
the electric field.
• The maximum current is given by

• Therefore the upper limit of the power input is given by

• The efficiency of the IMPATT diodes is given by


Efficiency of IMPATT Diode
• For an ideal Read-type IMPATT diode, the ratio of the ac
voltage to the applied voltage is about 0.5.
• The ratio of the ac current to the dc current is about 2/π.
So that the efficiency would be about l/ π or more than
30%.
• For practical IMPATT diodes the efficiency is usually less
than 30% because of the
1) Space-charge effect.
2) The reverse-saturation-current effect
3) The high-frequency-skin effect
4) The ionization-saturation effect
• IMPATT diodes are at present the most powerful CW
solid-state microwave power sources.
• The diodes have been fabricated from germanium,
silicon, and gallium arsenide and other semiconductors
as well.
Advantages of IMPATT Diode
• Potentially reliable
• Compact in Size
• Inexpensive
• Moderately efficient microwave power
sources
Disadvantages of IMPATT Diode

• The rate of generation of electron-hole pair in


the avalanche region causes the generation of
high noise.
• It offers a low tuning range.
• It offers high sensitivity to different operating
conditions.

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