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Lesson Hall Effect

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Amrita Rajesh
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22 views

Lesson Hall Effect

Uploaded by

Amrita Rajesh
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Definition

When a piece of conductor (metal or Semiconductor) carrying current


is placed in a transverse magnetic field, an electric field is produced
inside the conductor in a direction normal to both the current and the
magnetic field. This phenomenon is known as the Hall Effect and the
generated voltage is called the Hall voltage.

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Explanation:

Consider a conventional

current flow through the strip

along OX and a magnetic field

if induction B is applied along

axis OY.

2
Case – I If the Material is N-type Semi- Conductor (or)
Metal
• If the strip is made up of metal or N-type
semiconductor, the charge carriers in the strip will be
electrons.
•As conventional current flows along OX, the electrons
must be moving along XO. If the velocity of the
electrons is ‘v’ and charge of the electrons is ‘-e’, the
force on the electrons due to the magnetic field is,
•F= - Bev, which acts along OZ. This causes the
electrons to be deflected and so the electrons accumulate
at the face ABEF.

3
• Thus, face ABEF will become negative and the face

OCDG becomes positive. A potential difference is

therefore established across faces ABEF and OCDG.,

causing a field EH.

• This field gives rise to a force of ‘ –eE H’ on the

electrons in the opposite direction (i.e, in the negative

Z direction). 4
At equilibrium , eEH = Bev (or) EH = Bv (1)

If J is the current density, then , J= -nev (2)

Where ‘n ‘ is the concentration of current carriers,

From eq. (2)

v= J/-ne (3)

Substituting the value of v in eq. (1) we get,

EH = BJ/-ne (4) .

5
• The Hall Effect is described by means of the Hall
coefficient ‘RH ‘ in terms of current density ‘ J’ by the
relation,
EH = RHBJ

(or) RH = EH / BJ (5)

By substituting the value of EH from equ. (4) we get,

RH = BJ/ -neBJ = - 1/ne (6)

• Since all the three quantities EH, J and B are


measurable , the Hall coefficient RH and hence the
carrier density ‘n’ can be found out. 6
Case – (ii) If the material is a P-type semiconductor
If the strip is a P- type semiconductor, the charge carriers
in the strip will be holes i.e., positively charged particles.
The holes will constitute current in the direction of
conventional current. Therefore, holes move along the
direction of the conventional current itself i.e., along OX.
If ‘e’ is the charge of the hole, the force experienced by the
holes due to magnetic field is , F= Bev, which acts along
OZ. This causes the holes to accumulate on the face ABEF-
making it positive and leaving the face OCDG as negative.
Therefore , for a P-type semiconductor, RH = 1/pe (7)

Where p= the density of holes.


7
Determination of Hall Coefficient
The Hall coefficient is determined by measuring the Hall
voltage that generates the Hall field.
If ‘w’ is the width of the sample across which the Hall
voltage is measured, then

EH = VH/ w (8)

We know that RH = EH / BJ (9)

Substituting the value of EH in the above equation, we get,

RH = VH / wBJ (or)

VH = RH w BJ (10) 8
If the thickness of the sample is ‘t’ , then its cross
sectional area A= wt, and the current density,

J= I/A = I/wt (11)


Substitute the value of ‘ J’ in equation (11) , we get

VH = RH w BJ / wt = RH I B /t

(or) RH = VH t / IB (12)

VH will be opposite in sign for P and N type


semiconductors
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Experiment: A rectangular slab of the given material having
thickness ‘t’ and width ‘w’ is taken . A current of ‘I’ amperes
is passed through this sample by connecting it to a battery,
‘Ba’. The sample is placed between two pole pieces of an
electromagnet such that the field ‘B’ is perpendicular to I as
shown in the experimental setup.
The Hall voltage ‘ VH’ is then measured by placing two
probes at the two side faces of the slab. If the magnetic flux
density is ‘B’ and ‘VH’ is the hall voltage, then the Hall
coefficient.
RH = VH t / IB (m3 /coulomb)

For n-type material, σn =neµe (or) µe = σn / ne = - σn . RH


10
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Applications of Hall effect:
(1) Determination of type of semiconductor
For a N-type semiconductor, the Hall coefficient is negative
whereas for a P-type semiconductor, it is positive. Thus from
the direction of the Hall voltage developed, one can find out
the type of semiconductor.
(2) Calculation of carrier concentration
Once Hall coefficient RH is measured, the carrier
concentration can be obtained from,
n = 1/eRH or p= 1/eRH
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(3). Determination of mobility
We know that, conductivity, σn =neµe (or) µe = σn /ne = - σn
RH
Also σp =peµh or µh = σp /pe = σp RH . Thus by measuring
σ and RH, µ can be calculated.
(4) Measurement of magnetic flux density:
Using a semiconductor sample of known ‘RH ‘ the
magnetic flux density can be deduced from RH = VH t/ BI or
B = VH t / RH I

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