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Brief History

Brief history of VLSI

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4 views

Brief History

Brief history of VLSI

Uploaded by

shilpa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Module 1

Introduction
Outline
 A Brief History
 MOS Transistors
 CMOS Logic

CMOS VLSI Design 4th Ed.


A Brief History
 1958: First integrated circuit
– Flip-flop using two transistors
– Built by Jack Kilby at Texas
Instruments
 2010 Courtesy Texas Instruments

– Intel Core i7 mprocessor


• 2.3 billion transistors
– 64 Gb Flash memory
• > 16 billion transistors
[Trinh09]
© 2009 IEEE.

CMOS VLSI Design 4th Ed.


Growth Rate
 53% compound annual growth rate over 50 years
– No other technology has grown so fast so long
 Driven by miniaturization of transistors
– Smaller,cheaper, faster, lower in power!
– Revolutionary effects on society

[Moore65]
Electronics Magazine

CMOS VLSI Design 4th Ed.


Annual Sales
 >1019 transistors manufactured in 2008
– 1 billion for every human on the planet

CMOS VLSI Design 4th Ed.


Invention of the Transistor
 Vacuum tubes ruled in first half of 20th century Large,
expensive, power-hungry, unreliable
 1947: first point contact transistor
– John Bardeen and Walter Brattain at Bell Labs

CMOS VLSI Design 4th Ed.


 Ten years later, Jack Kilby at Texas Instruments
realized the potential for miniaturization if multiple
transistors could be built on one piece of silicon.
 Bell Labs developed the bipolar junction transistor.
Bipolar transistors were more reliable, less noisy,
and more power-efficient. Early integrated circuits
primarily used bipolar transistors.
 By the 1960s, Metal Oxide Semiconductor Field
Effect Transistors (MOSFETs) began to enter
production.

CMOS VLSI Design 4th Ed.


Continued…
 They come in two flavors: nMOS and pMOS, using
n-type and p-type silicon, respectively.
 In 1963, Frank Wanlass at Fairchild described the
first logic gates using MOSFETs .
 Fairchild’s gates used both nMOS and pMOS
transistors, earning the name Complementary Metal
Oxide Semiconductor, or CMOS.

CMOS VLSI Design 4th Ed.


Transistor Types
 Bipolar transistors
– npn or pnp silicon structure
– Small current into very thin base layer controls
large currents between emitter and collector
– Base currents limit integration density
 Metal Oxide Semiconductor Field Effect Transistors
– nMOS and pMOS MOSFETS
– Voltage applied to insulated gate controls current
between source and drain
– Low power allows very high integration

CMOS VLSI Design 4th Ed.


MOS Integrated Circuits
 1970’s processes usually had only nMOS transistors
– Inexpensive, but consume power while idle

Intel
Museum.
[Vadasz69]
Reprinted
© 1969 IEEE. with
permission.

Intel 1101 256-bit SRAM Intel 4004 4-bit mProc


 1980s-present: CMOS processes for low idle power

CMOS VLSI Design 4th Ed.


Moore’s Law: Then
 In 1965, Gordon Moore observed that plotting the
number of transistors that can be most economically
manufactured on a chip gives a straight line on a
semilogarithmic scale .
 At the time, he found transistor count doubling every
18 months. This observation has been called
Moore’s Law.

CMOS VLSI Design 4th Ed.


Moore’s Law: Then
 The number of transistors in Intel microprocessors
has doubled every 26 months since the invention of
the 4004.

Integration Levels
SSI: 10 gates -
Inverter
MSI: 1000 gates
LSI: 10,000 gates
[Moore65]
Electronics Magazine
VLSI: > 10k gates
CMOS VLSI Design 4th Ed.
Integration Levels
 SSI: 10 gates –Ex.Inverter
 MSI: 1000 gates-Ex.Counter
 LSI: 10,000 gates-Ex.8 bit Microprocessor
 VLSI: > 10k gates –Most of the integrated circuits

CMOS VLSI Design 4th Ed.


And Now…

CMOS VLSI Design 4th Ed.


Feature Size
 Minimum feature size shrinking 30% every 2-3 years

CMOS VLSI Design 4th Ed.


Corollaries
 Many other factors grow exponentially
– Ex: clock frequency, processor performance

CMOS VLSI Design 4th Ed.

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