13 Modern Physics
13 Modern Physics
• An electron is a negatively
charged subatomic particle
that can be either bound to an
atom or free (not bound). An
electron that is bound to an atom
is one of the three primary types
of particles within the atom -- the
other two are protons and
neutrons.
Proton
• A neutron is a subatomic
particle found in the nucleus
of every atom except that of
simple hydrogen. The particle
derives its name from the fact
that it has no electrical charge; it
is neutral. Neutrons are
extremely dense.
Neutron
• James Chadwick discovered the neutron in 1932.
He discovered it using this curious device which
he made from pieces found in the laboratory:
• Neutrons are very small indeed.
• There are stars made of neutrons.
• Neutrons are slightly heavier than protons.
• Neutrons are made of three quarks.
Nucleus
• Radioactivity is a phenomenon
exhibited by a few matters of
emitting energy and subatomic
particles spontaneously.
Radioactivity is due to the nuclear
instability of an atom.
Uses of Radioactivity
• The fifth electron of the dopant is set free. Thus, the impurity atom
donates a free electron for conduction in the lattice and is called
“Donar“.
• Since the number of free electron increases by the addition of an
impurity, the negative charge carriers increase. Hence, it is called
n-type semiconductor.
• Crystal as a whole is neutral, but the donor atom becomes an
immobile positive ion. As conduction is due to a large number of
free electrons, the electrons in the n-type semiconductor are the
P-Type Semiconductor
• There are three biasing conditions for the P-N junction diode, and
this is based on the voltage applied:
• Zero bias: No external voltage is applied to the P-N junction diode.
• Forward bias: The positive terminal of the voltage potential is
connected to the p-type while the negative terminal is connected to
the n-type.
• Reverse bias: The negative terminal of the voltage potential is
connected to the p-type and the positive is connected to the n-type.
Forward Bias
Forward Bias
• When the p-type is connected to the battery’s positive terminal
and the n-type to the negative terminal, then the P-N junction is
said to be forward-biased. When the P-N junction is forward
biased, the built-in electric field at the P-N junction and the
applied electric field are in opposite directions. When both the
electric fields add up, the resultant electric field has a
magnitude lesser than the built-in electric field. This results in a
less resistive and thinner depletion region. The depletion
region’s resistance becomes negligible when the applied voltage
is large. In silicon, at the voltage of 0.6 V, the resistance of the
depletion region becomes completely negligible, and the current
flows across it unimpeded.
Reverse Bias
Reverse Bias
• When the p-type is connected to the battery’s
negative terminal and the n-type is connected to the
positive side, the P-N junction is reverse biased. In
this case, the built-in electric field and the applied
electric field are in the same direction. When the two
fields are added, the resultant electric field is in the
same direction as the built-in electric field, creating a
more resistive, thicker depletion region. The
depletion region becomes more resistive and thicker
if the applied voltage becomes larger.
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