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05 Internal Memory

The document summarizes different types of semiconductor memory, including RAM, ROM, PROM, EPROM, EEPROM, and flash memory. It describes the key characteristics of dynamic RAM and static RAM. Dynamic RAM uses capacitors to store bits and needs refreshing to prevent charge leakage, while static RAM uses flip-flops and does not require refreshing. Both are volatile and need power to preserve data, but static RAM is faster and simpler while dynamic RAM is smaller, less expensive, and denser.

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dommy omosa
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20 views

05 Internal Memory

The document summarizes different types of semiconductor memory, including RAM, ROM, PROM, EPROM, EEPROM, and flash memory. It describes the key characteristics of dynamic RAM and static RAM. Dynamic RAM uses capacitors to store bits and needs refreshing to prevent charge leakage, while static RAM uses flip-flops and does not require refreshing. Both are volatile and need power to preserve data, but static RAM is faster and simpler while dynamic RAM is smaller, less expensive, and denser.

Uploaded by

dommy omosa
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Internal Memory

Semiconductor Memory Types


Memory Type Category Erasure Write Mechanism Volatility

Random-access
Read-write memory Electrically, byte-level Electrically Volatile
memory (RAM)

Read-only
Masks
memory (ROM)
Read-only memory Not possible

Programmable
ROM (PROM)

Erasable PROM
UV light, chip-level
(EPROM) Nonvolatile

Electrically

Electrically Erasable Read-mostly memory


Electrically, byte-level
PROM (EEPROM)

Flash memory Electrically, block-level


Semiconductor Memory
• RAM
—Misnamed as all semiconductor memory is
random access
—Read/Write
—Volatile
—Temporary storage
—Static or dynamic
Memory Cell Operation
Dynamic RAM
• Bits stored as charge in capacitors
• Charges leak
• Need refreshing even when powered
• Simpler construction
• Smaller per bit
• Less expensive
• Need refresh circuits
• Slower
• Main memory
• Essentially analogue
—Level of charge determines value
Dynamic RAM Structure
DRAM Operation
• Address line active when bit read or written
— Transistor switch closed (current flows)
• Write
— Voltage to bit line
– High for 1 low for 0
— Then signal address line
– Transfers charge to capacitor
• Read
— Address line selected
– transistor turns on
— Charge from capacitor fed via bit line to sense amplifier
– Compares with reference value to determine 0 or 1
— Capacitor charge must be restored
Static RAM
• Bits stored as on/off switches
• No charges to leak
• No refreshing needed when powered
• More complex construction
• Larger per bit
• More expensive
• Does not need refresh circuits
• Faster
• Cache
• Digital
—Uses flip-flops
SRAM v DRAM
• Both volatile
—Power needed to preserve data
• Dynamic cell
—Simpler to build, smaller
—More dense
—Less expensive
—Needs refresh
—Larger memory units
• Static
—Faster
—Cache

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