POWER ELECTRONICS

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 TOPICS COVERED
• SEMICONDUCTOR DEVICES
• CONTROLLED RECTIFIERS
• DC CHOPPERS
• INVERTERS
• AC CHOPPERS

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 SEMICONDUCTOR DEVICES

• POWER DIODE
• POWER TRANSISTORS
• POWER BJT
• POWER MOSFET
• IGBT
• SIT
• THYRISTORS
• SCR
• TRIAC
• GTO
• SITH
• MCT

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 POWER DIODE

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STRUCTURAL FEATURES OF POWER
DIODE AND ITS SYMBOL

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 V-I CHARACTERISTICS OF SIGNAL DIODE,
POWER DIODE AND IDEAL DIODE

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REVERSE RECOVERY CHARACTERISTICS

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 POWER TRANSISTORS
FOUR TYPES
 Bipolar junction Transistor(BJT)
 Metal Oxide Semiconductor Field Effect
Transistor(MOSFET)
 Insulated Gate Bipolar Transistors(IGBT) and
 Static Induction Transistor (SIT)

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 POWER BJT
• Three layer ,Two Junction npn or pnp type
• Bipolar means current flow in the device is
due to the movement of BOTH holes and
Electrons.

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 POWER BJT

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 V-I CHARACTERISTICS OF POWER BJT

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 SWITCHING CHARACTERISTICS CIRCUIT FOR BJT

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 SWITCHING CHARACTERISTICS OF POWER BJT

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 SAFE OPERATING AREA FOR POWER BJT

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 POWER MOSFET

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 POWER MOSFET
• THREE TERMINALS – DRAIN,SOURCE AND
GATE
• VOLTAGE CONTROLLED DEVICE
• GATE CIRCUIT IMPEDANCE IS HIGH (OF THE
ORDER OF MEGA OHM).HENCE GATE CAN BE
DRIVEN DIRECTLY FROM MICROELECTRONIC
CIRCUITS.
• USED IN LOW POWER HIGH FREQUENCY
CONVERTERS,SMPS AND INVERTERS
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 BASIC STRUCTURE OF n-CHANNEL
POWER MOSFET

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 MOSFET TRANSFER CHARACTERISTICS

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 MOSFET OUTPUT CHARACTERISTICS

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 MOSFET SWITCHING CHARACTERISTICS

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COMPARISON OF BJT AND MOSFET
S.No BJT MOSFET
1 BIPOLAR DEVICE UNIPOLAR DEVICE
2 LOW INPUT IMPEDANCE(KILO OHM) HIGH INPUT IMPEDANCE (MEGA
OHM)

3 HIGH SWITCHING LOSSES BUT LOWER LOWER SWITCHING LOSSES BUT

CONDUCTION LOSSES HIGH ON-RESISTANCE AND
CONDUCTION LOSSES
4 CURRENT CONTROLLED DEVICE VOLTAGE CONTROLLED DEVICE
5 NEGATIVE TEMPERATURE COEFFICIENT POSITIVE TEMPERATURE
OF RESISTANCE.PARALLEL OPERATION COEFFICIENT OF RESISTANCE.
IS DIFFICULT.CURRENT SHARING PARALLEL OPERATION IS EASY
RESISTORS SHOULD BE USED.
6 SECONDARY BREAKDOWN OCCURS. SECONDARY BREAKDOWN DOES NOT
OCCUR.
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02/15/24 AVAILABLE WITH RATINGSsemiconductor
1200V,800A devices AVAILABLE WITH RATINGS
21
 INSULATED GATE BIPOLAR TRANSISTOR
(IGBT)
• COMBINES THE BEST QUALITIES OF BOTH BJT AND
MOSFET
• HAS HIGH INPUT IMPEDANCE AS MOSFET AND HAS
LOW ON-STATE POWER LOSS AS IN BJT
• OTHER NAMES
 MOSIGT (METAL OXIDE INSULATED GATE TRANSISTOR),
 COMFET (CONDUCTIVELY-MODULATED FIELD EFFECT
TRANSISTOR),
 GEMFET (GAIN MODULATED FIELD EFFECT TRANSISTOR),
 IGT (INSULATED GATE TRANSISTOR)
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 BASIC STRUCTURE OF IGBT

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 BASIC STRUCTURE OF IGBT

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 EQUIVALENT CIRCUIT OF IGBT

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 BASIC STRUCTURE OF IGBT

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 EQUIVALENT CIRCUIT OF IGBT

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 V-I AND TRANSFER CHARACTERISTICS
OF IGBT

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 SWITCHING CHARACTERISTICS OF IGBT

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 APPLICATIONS OF IGBT
• DC AND AC MOTOR DRIVES
• UPS SYSTEMS,POWER SUPPLIES
• DRIVES FOR SOLENOIDS,RELAYS AND
CONTACTORS

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 COMPARISON OF IGBT WITH MOSFET
S.No MOSFET IGBT
1. THREE TERMINALS ARE GATE,SOURCE AND THREE TERMINALS ARE GATE,EMITTER
DRAIN AND COLLECTOR
2. HIGH INPUT IMPEDANCE HIGH INPUT IMPEDANCE

3. VOLTAGE CONTROLLED DEVICE VOLTAGE CONTROLLED DEVICE

4. RATINGS AVAILABLE UPTO 500V,140A RATINGS AVAILABLE UPTO 1200V,500A

5. OPERATING FREQUENCY IS UPTO I MHz OPERATING FREQUENCY IS UPTO 50KHz

6. WITH RISE IN TEMPERATURE,THE INCREASE IN ON-STATE RESISTANCE IN MOSFET IS

MORE PRONOUNCED THAN IGBT.SO, ON-STATE VOLTAGE DROP AND LOSSES RISE
RAPIDLY IN MOSFET THAN IN IGBT ITH RISE IN TEMPERATURE.
7. WITH RISE IN VOLTAGE,THE INCREMENT IN ON-STATE VOLTAGE DROP IS MORE
DOMINANT IN MOSFET THAN IT IS IN IGBT.THIS MEANS IGBTs CAN BE DESIGNED FOR
HIGHER VOLTAGE RATINGS THAN MOSFETs.
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 BASIC STRUCTURE OF
STATIC INDUCTION TRANSISTOR(SIT)

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 WORKING OF SIT

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 WORKING OF SIT
• SIT IS A NORMALLY ON DEVICE
• IF VGS =0 AND VDS IS PRESENT ,ELECTRONS WOULD FLOW FROM
SOURCE TO n,P+,n-, n+ AND REACH DRAIN.DRAIN CURRENT
FLOWS FROM D TO S.
• IF VGS = NEGATIVE, P+n- JUNCTIONS GET REVERSE
BIASED.DEPLETION REGION IS FORMED AROUND P+
ELECTRODES AND THIS REDUCES THE CURRENT FLOW FROM
ITS VALUE WHEN VGS =0.
• AT SOME HIGHER VALUE OF REVERSE BIAS VOLTAGE VGS ,THE
DEPLETION LAYER WOULD GROW TO SUCH AN EXTENT AS TO
CUT OFF THE CHANNEL COMPLETELY AND LOAD CURRENT
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 STATIC INDUCTION TRANSISTOR(SIT)
• IT IS A HIGH POWER,HIGH FREQUENCY DEVICE.
• LARGE DROP IN SIT MAKES IT UNSUITABLE FOR GENERAL
POWER ELECTRONIC APPLICATIONS.
• A 1500V,180A SIT HAS A CHANNEL RESISTANCE OF 0.5 Ω
GIVING 90V CONDUCTION DROP AT 180A.AN EQUIVALENT
THYRISTOR OR GTO DROP MAY BE AROUND 2V.
• TYPICAL TON AND TOFF TIMES ARE VERY LOW AROUND 0.35µs.
• HIGH CONDUCTION DROP WITH VERY LOW TURN-ON AND
TURN-OFF TIMES RESULT IN LOW ON-OFF ENERGY
LOSSES.THIS MAKES SIT SUITABLE FOR HIGH POWER,HIGH
FREQUENCY APPLICATIONS.
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 APPLICATIONS OF SIT
• AM/FM TRANSMITTERS
• INDUCTION HEATERS
• HIGH VOLTAGE LOW CURRENT POWER SUPPLIES
• ULTRASONIC GENERATORS
• TYPICAL RATINGS AVAILABLE -1200V,300AWITH
TURN ON AND TURN OFF TIMES AROUND 0.25 TO
0.35 µs AND 100KHz OPERATING FREQUENCY.

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 THYRISTORS
SILICON CONTROLLED RECTIFIER (SCR)
• Three terminal, four layers (P-N-P-N)
• Can handle high currents and high voltages,
with better switching speed and improved
breakdown voltage .
• Name ‘Thyristor’, is derived by a combination of
the capital letters from THYRatron and
transISTOR.
• Has characteristics similar to a thyratron tube
But from the construction view point belongs
to transistor (pnp or npn device) family.
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 THYRISTORS
• TYPICAL RATINGS AVAILABLE ARE 1.5KA &
10KV WHICH RESPONDS TO 15MW POWER
HANDLING CAPACITY.
• THIS POWER CAN BE CONTROLLED BY A GATE
CURRENT OF ABOUT 1A ONLY.

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 BASIC STRUCTURE OF SCR

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 BASIC STRUCTURE OF SCR
CONTD…

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 SCR / Thyristor

• Circuit Symbol and Terminal Identification

ANODE

SCR
2N3668
GATE

CATHODE

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 SCR / Thyristor

• Anode and Cathode

terminals as
conventional pn ANODE
junction diode
SCR
2N3668
GATE
• Gate terminal for a
controlling input signal
CATHODE

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 SCR/ Thyristor

• An SCR (Thyristor) is a “controlled” rectifier

(diode)
• Control the conduction under forward bias by
applying a current into the Gate terminal
• Under reverse bias, looks like conventional pn
junction diode

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 SCR / Thyristor
Anode
• 4-layer (pnpn) device
• Anode, Cathode as for a P
conventional pn
junction diode
N

Gate
• Cathode Gate brought P
out for controlling input
N

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 ANODE Equivalent Circuit
ANODE

Q1

N N
BJT_PNP_VIRTUAL

GATE
Q2
P P
GATE
BJT_NPN_VIRTUAL

CATHODE

CATHODE
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 Apply Biasing
Variable
50V

With the Gate terminal

OPEN, both transistors are ANODE (A)
IF
OFF. As the applied
voltage increases, there will Q1 IC2=IB1
be a “breakdown” that
BJT_PNP_VIRTUAL
causes both transistors to
conduct (saturate) making GATE (G)
IC1 = IB2 Q2

IF > 0 and VAK = 0.

BJT_NPN_VIRTUAL

VBreakdown = VBR(F) IF
CATHODE (K)

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 V-I CHARACTERISTICS OF SCR

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 Apply a Gate Current
For 0 < VAK < VBR(F), Variable
50V

Turn Q2 ON by applying a IF
ANODE (A)
current into the Gate
Q1 IC2 = IB1
This causes Q1 to turn ON, and BJT_PNP_VIRTUAL
eventually both transistors
SATURATE GATE (G)
IB2 Q2

VAK = VCEsat + VBEsat BJT_NPN_VIRTUAL

VG

CATHODE (K)
IF
If the Gate pulse is removed, Q1
and Q2 still stay ON!

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 How do you turn it OFF?

• Cause the forward current to fall below the

value if the “holding” current, IH

• Reverse bias the device

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 SCR Application – Power Control
XSC1

G
T
A B
When the voltage across
the capacitor reaches the
“trigger-point” voltage of
the device, the SCR turns
ON, current flows in the
R Load for the remainder of
25kOhm 60%
Key = a the positive half-cycle.
D1
Vs 2N1776
170V
120.21V_rms
60Hz Current flow stops when
0Deg
Rload
C the applied voltage goes
15ohm
0.01uF
negative.

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 SWITCHING CHARACTERISTICS OF SCR

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 SCR OPERATING MODES
FORWARD BLOCKING MODE: Anode is positive w.r.t cathode, but
the anode voltage is less than the break over voltage (VBO) .
only leakage current flows, so thyristor is not conducting .
FORWARD CONDUCTING MODE: When anode voltage becomes
greater than VBO, thyristor switches from forward blocking to
forward conduction state, a large forward current flows.
If the IG=IG1, thyristor can be turned ON even when anode
voltage is less than VBO.
– The current must be more than the latching current (IL).
– If the current reduced less than the holding current (IH),
thyristor switches back to forward blocking state.
REVERSE BLOCKING MODE: When cathode is more positive than
anode , small reverse leakage current flows. However if cathode
voltage is increased to reverse breakdown voltage , Avalanche
breakdown occurs and large current flows.
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 Thyristor- Operation Principle
• Thyristor has three p-n junctions (J1, J2, J3 from the anode).
• When anode is at a positive potential (VAK) w.r.t cathode with no
voltage applied at the gate, junctions J1 & J3 are forward biased,
while junction J2 is reverse biased.
– As J2 is reverse biased, no conduction takes place, so thyristor
is in forward blocking state (OFF state).
– Now if VAK (forward voltage) is increased w.r.t cathode,
forward leakage current will flow through the device.
– When this forward voltage reaches a value of breakdown
voltage (VBO) of the thyristor, forward leakage current will
reach saturation and reverse biased junction (J2) will have
avalanche breakdown and thyristor starts conducting (ON
state), known as forward conducting state .
• If Cathode is made more positive w.r.t anode, Junction J1 & J3 will
be reverse biased and junction J2 will be forward biased.
• A small reverse leakage current flows, this state is known as
reverse blocking state.
• As cathode is made more and more positive, stage is reached
when both junctions A & C will be breakdown, this voltage is
referd as reverse breakdown voltage (OFF state), and device is in
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 TRIGGERING METHODS
• THYRISTOR TURNING ON IS ALSO KNOWN AS
TRIGGERING.
• WITH ANODE POSITIVE WITH RESPECT TO CATHODE, A
THYRISTOR CAN BE TURNED ON BY ANY ONE OF THE
FOLLOWING TECHNIQUES :
 FORWARD VOLTAGE TRIGGERING
 GATE TRIGGERING
 DV/DT TRIGGERING
 TEMPERATURE TRIGGERING
 LIGHT TRIGGERING

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 Forward Voltage Triggering
• When breakover voltage (VBO) across a thyristor is
exceeded than the rated maximum voltage of the device,
thyristor turns ON.
• At the breakover voltage the value of the thyristor anode
current is called the latching current (IL) .
• Breakover voltage triggering is not normally used as a
triggering method, and most circuit designs attempt to avoid
its occurrence.
• When a thyristor is triggered by exceeding VBO, the fall time
of the forward voltage is quite low (about 1/20th of the time
taken when the thyristor is gate-triggered).
• However, a thyristor switches faster with VBO turn-ON than
with gate turn-ON, so permitted di/dt for breakover voltage
turn-on is lower.

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 dv/dt triggering
• With forward voltage across anode & cathode of a thyristor, two
outer junctions (A & C) are forward biased but the inner junction
(J2) is reverse biased.
• The reversed biased junction J2 behaves like a capacitor because
of the space-charge present there.
• As p-n junction has capacitance, so larger the junction area the
larger the capacitance.
• If a voltage ramp is applied across the anode-to-cathode, a current
will flow in the device to charge the device capacitance according
to the relation:

• If the charging current becomes large enough, density of moving

current carriers in the device induces switch-on.
• This method of triggering is not desirable because high charging
current (Ic) may damage
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 Temperature Triggering
• During forward blocking, most of the applied voltage
appears across reverse biased junction J2.
• This voltage across junction J2 associated with leakage
current may raise the temperature of this junction.
• With increase in temperature, leakage current through
junction J2 further increases.
• This cumulative process may turn on the SCR at some high
temperature.
• High temperature triggering may cause Thermal runaway
and is generally avoided.

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 Light Triggering
• In this method light particles (photons) are made to
strike the reverse biased junction, which causes an
increase in the number of electron hole pairs and
triggering of the thyristor.
• For light-triggered SCRs, a slot (niche) is made in the
inner p-layer.
• When it is irradiated, free charge carriers are
generated just like when gate signal is applied b/w
gate and cathode.
• Pulse light of appropriate wavelength is guided by
optical fibers for irradiation.
• If the intensity of this light thrown on the recess
exceeds a certain value, forward-biased SCR is turned
on. Such a thyristor is known as light-activated SCR
(LASCR).
• Light-triggered thyristors is mostly used in high-
voltage direct current (HVDC) transmission systems.
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 Thyristor Gate Control Methods
• An easy method to switch ON a SCR into conduction is to
apply a proper positive signal to the gate.
• This signal should be applied when the thyristor is forward
biased and should be removed after the device has been
switched ON.
• Thyristor turn ON time should be in range of 1-4 micro
seconds, while turn-OFF time must be between 8-50
micro seconds.
• Thyristor gate signal can be of three varieties.
– D.C Gate signal
– A.c Gate Signal
– Pulse
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 Thyristor Gate Control Methods
D.C Gate signal: Application of a d.c gate signal causes the flow of gate
current which triggers the SCR.
– Disadvantage is that the gate signal has to be continuously applied,
resulting in power loss.
– Gate control circuit is also not isolated from the main power circuit.
A.C Gate Signal: In this method a phase - shifted a.c voltage derived from
the mains supplies the gate signal.
– Instant of firing can be controlled by phase angle control of the gate
signal.
Pulse: Here the SCR is triggered by the application of a positive pulse of
correct magnitude.
– For Thyristors it is important to switched ON at proper instants in a
certain sequence.
– This can be done by train of the high frequency pulses at proper
instants through a logic circuit.
– A pulse transformer is used for circuit isolation.
– Here, the gate looses MH1032/brsr/A.Y
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very low because the drive is discontinuous.
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 Thyristor Commutation
• Commutation: Process of turning off a conducting thyristor
– Current Commutation
– Voltage Commutation
• A thyristor can be turned ON by applying a positive voltage
of about a volt or a current of a few tens of milliamps at
the gate-cathode terminals.
• But SCR cannot be turned OFF via the gate terminal.
• It will turn-off only after the anode current is negated
either naturally or using forced commutation techniques.
• These methods of turn-off do not refer to those cases
where the anode current is gradually reduced below
Holding Current level manually or through a slow process.
• Once the SCR is turned ON, it remains ON even after
removal of the gate signal, as long as a minimum current,
the Holding CurrentMH1032/brsr/A.Y
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maintained in the main or
rectifier circuit.
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 Thyristor Turn-off Mechanism
• In all practical cases, a negative current flows through the device.
• This current returns to zero only after the reverse recovery time (trr) ,
when the SCR is said to have regained its reverse blocking capability.
• The device can block a forward voltage only after a further tfr, the
forward recovery time has elapsed.
• Consequently, the SCR must continue to be reverse-biased for a
minimum of tfr + trr = tq, the rated turn-off time of the device.
• The external circuit must therefore reverse bias the SCR for a time toff >
tq.
• Subsequently, the reapplied forward biasing voltage must rise at a dv/dt
< dv/dt (reapplied) rated. This dv/dt is less than the static counterpart.

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 Thyristor Commutation Classification
• Commutation can be classified as
– Natural commutation
– Forced commutation

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 MOS CONTROLLED THYRISTOR (MCT)
• IT IS BASICALLY A THYRISTOR WITH TWO MOSFETS
BUILT INTO THE GATE STRUCTURE
• ONE MOSFET IS USED TO TURN ON THE MCT AND
THE OTHER FOR TURNING OFF OF MCT.
• IT IS A HIGH FREQUENCY,HIGH POWER,LOW
CONDUCTION DROP SWITCHING DEVICE.
• IN A MCT, THE ANODE IS THE REFERENCE W.R.TO
WHICH ALL THE GATE SIGNALS ARE APPLIED. IN A
SCR,CATHODE IS THE REFERENCE SIGNAL TO THE
GATE SIGNAL.
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 BASIC STRUCTURE OF MCT

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 EQUIVALENT CIRCUIT OF MCT

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 MERITS OF MCT
• LOW FORWARD CONDUCTION DROP
• FAST TURN AND TURN OFF TIMES
• LOW SWITCHING LOSSES
• HIGH GATE INPUT IMPEDANCE

• LOW REVERSE VOLTAGE BLOCKING

CAPABILITY IS THE MAIN DISADVANTAGE OF
MCT
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GATE TURN OFF THYRISTORS (GTO)

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 PRINCIPLE OF OPERATION

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 TRIAC
(TRIODE FOR ALTERNATING CURRENT)
• TRIAC is five layer device that is able to
pass current bidirectionally and
therefore behaves as an a.c. power
control device.
• The main connections are simply named
main terminal 1 (MT1) and main terminal
2 (MT2).
• The gate designation still applies, and is
still used as it was with the SCR.
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 TRIAC (CONTD….)
• it not only carries current in either direction, but the gate
trigger pulse can be either polarity regardless of the polarity
of the main applied voltage.
• The gate can inject either free electrons or holes into the
body of the triac to trigger conduction either way.
– So triac is referred to as a "four-quadrant" device.
• Triac is used in an ac environment, so it will always turn off
when the applied voltage reaches zero at the end of the
current half-cycle.
• If a turn-on pulse is applied at some controllable point after
the start of each half cycle, we can directly control what
percentage of that half-cycle gets applied to the load, which is
typically connected in series with MT2.
• USED for light dimmer controls and motor speed controls.
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 TRIAC SYMBOL AND BASIC STRUCTURE

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 TRIAC OPERATION
• TRIAC can be considered as two thyristors
connected in antiparallel .The single gate terminal is
common to both thyristors.
• The main terminals MT1 and MT2 are connected to
both p and n regions of the device and the current
path through the layers of the device depends upon
the polarity of the applied voltage between the main
terminals.
• Device polarity is usually described with reference to
MT1, where the term MT2+ denotes that terminal
MT2 is positive with respect to terminal MT1.
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