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Voltage References

Voltage references are circuits designed to provide a constant output voltage independent of temperature changes. They work by introducing compensating temperature drifts that cancel out inherent thermal drifts in the circuit's components. Common voltage reference designs include temperature compensation schemes, avalanche diode references, and bandgap references which exploit opposing temperature coefficients to achieve very low overall temperature dependence.

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Nirmala K
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83 views

Voltage References

Voltage references are circuits designed to provide a constant output voltage independent of temperature changes. They work by introducing compensating temperature drifts that cancel out inherent thermal drifts in the circuit's components. Common voltage reference designs include temperature compensation schemes, avalanche diode references, and bandgap references which exploit opposing temperature coefficients to achieve very low overall temperature dependence.

Uploaded by

Nirmala K
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Voltage References

Voltage References
• The circuit that is primarily designed for providing a constant voltage
independent of changes in temperature is called a voltage reference.
• The most important characteristic of a voltage reference is the
temperature coefficient of the output reference voltage TC R.
dV R
TC R 
dT
• The desirable properties of a voltage reference are:
i. Reference voltage must be independent of any temperature
change.
ii. Reference voltage must have good power supply rejection which
is as independent of the supply voltage; and
iii. Output voltage must be as independent of the loading of output
current as possible (the circuit should have low output
impedance)
Voltage References
• The voltage reference circuit is used to bias the voltage source
circuit, and the combination can be called as the voltage regulator.
• The basic design strategy is producing a zero TC R at a given
temperature, and thereby achieving good thermal stability.
• Temperature stability of the order of 100ppm/˚C is typically expected
(V0 ± 100ppm (or) V0 x 0.999900 to V0 x 1.000100).
Voltage Reference circuit using temperature compensation scheme

• This design utilizes the close thermal coupling


achievable among the monolithic components
and compensates the known thermal drifts by
introducing an opposing and compensating drift
source of equal magnitude.
• A constant current I is supplied to the avalanche
diode DB and it provides a bias voltage of VB to
the base of Q1.
• The temperature dependence of the VBE drop
across Q1 and those across D1 and D2 results in
respective temperature coefficients.
• Hence, with the use of resistors R1 and R2 with
tapping across them at point N compensates for
the temperature drifts in the base-emitter loop of
Q1 .
• This results in generating a voltage reference VR
with normally zero temperature coefficient.
Voltage Reference circuit using temperature compensation scheme

• Applying KCL at node N, we get,


VB  VBE (Q1 )  VBE ( D1 )  VR VR  VBE ( D2 )

R1 R2
• Assuming matched transistors,
VBE (Q1 )  VBE ( D1 )  VBE ( D 2)  VBE

• Then, V  2V  V VR  VBE
B BE R

R1 R2
• Therefore, the voltage level VR is given by,
R2VB  VBE R1  2 R2 
VR 
R1  R2

• Differentiating VB and VBE partially with respect to temperature, we get,


R2 VB R1  2 R2  VBE
0 
R1  R2 T R1  R2 T
VB / T 2 R2  R1

VBE / T R2
• Therefore, it can be inferred that, zero temperature coefficient is obtained.
Voltage Reference circuit using Avalanche Diode Reference

• A voltage reference can be implemented using the breakdown


phenomenon condition of a heavily doped PN junction.
• The zener breakdown is the main mechanism for junctions, which
breakdown at a voltage of 5V or less.
• For integrated transistors, the base-emitter breakdown voltage falls
in the range of 6 to 8V.
• Therefore, the breakdown in the junctions of the integrated transistor
is primarily due to avalanche multiplication.
• The avalanche breakdown voltage VB of a transistor incurs a positive
temperature coefficient, typically in the range of 2mV/˚C to 5mV/˚C.
Voltage Reference circuit using Avalanche Diode Reference

• The circuit depicts a current reference circuit using


avalanche diode reference.
• The base bias for transistor Q1 is provided through
register R1 and it also provides the dc current needed to
bias DB, D1 and D2.

• The voltage at the base of Q1 is, VB(Q1) = VB + VD1 + VD2

• The voltage across R2 is, VR2 = VB(Q1) – VBE(Q1) – VBE(Q2)

• Therefore, VR2 = VB.

• Q2 and Q3 act as a current mirror circuit, current I0


V
equals the current through R2. I 0  R2  V B
R2 R2

• It shows that, the output current I0 has low temperature


coefficient, if the temperature coefficient of R2 is low.
Voltage Reference circuit using Avalanche Diode Reference

• The zero temperature coefficient for output


current can be achieved, if diodes are added
in series with R2, so that they can
compensate for the temperature variation of
R2 and VB.
• The temperature compensated avalanche
diode reference source circuit is shown.
• The transistor Q4 and Q5 form an active load
current mirror circuit.
• The base voltage of Q1 is the voltage VB
across zener DB.
Voltage Reference circuit using Avalanche Diode Reference

• Then, VB = (VBE x n) + VBE(Q1) + VBE(Q2) + VR2


(n is the no. of diodes)
• It can be expressed as, VB = (n+2)VBE + I0R2
• Differentiating partially with respect to T, we get,
VB V I R
 (n  2) BE  R2 0  I 0 2
T T T T

I 0 VB V R
R2   (n  2) BE  I 0 2
T T T T

I 0 1  VB VBE  R2


   (n  2)   I0
T R2  T T  T
• Therefore, zero temperature coefficient of I0 can be obtained.

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