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Chapter 5 Optical Detectors

This document discusses optical detectors used in fiber optic communications. It describes the basic requirements for detectors, the main types which are PIN and APD diodes, and the operating principles of photodetectors. PIN diodes are the most common optical detector and operate by converting absorbed photons into a photocurrent. APD diodes provide internal gain through impact ionization. The document also covers quantum efficiency, responsivity, and common materials used for photodetection like silicon and gallium arsenide. Photodiodes are widely applied in devices such as remote controls, CD players, and optical communication systems.

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Fraol Endale
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38 views

Chapter 5 Optical Detectors

This document discusses optical detectors used in fiber optic communications. It describes the basic requirements for detectors, the main types which are PIN and APD diodes, and the operating principles of photodetectors. PIN diodes are the most common optical detector and operate by converting absorbed photons into a photocurrent. APD diodes provide internal gain through impact ionization. The document also covers quantum efficiency, responsivity, and common materials used for photodetection like silicon and gallium arsenide. Photodiodes are widely applied in devices such as remote controls, CD players, and optical communication systems.

Uploaded by

Fraol Endale
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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School of Electrical Engineering

and computing
Department of Electronics and
Communication Engineering
Optical Communications

By

BY
BEKELE T 05/27/2023
1

Optical Communications
CHAPTER 5
Optical Detectors in Fiber Optic
Communications

By

BEKELE T
Chapter 5: Optical Detectors in Fiber Optic Communications

5.1 Introduction to Photodetectors


5.2 Basic Requirements for detectors in Fiber optics

5.3 Types of Photodetectors


5.3.1 Positive-Intrinsic-Negative (PIN) and
5.3.2 Avalanche Photo-Detector (APD) diodes
5.3.3 APD Verses PIN
5.4 Optical Detection Principle
5.4.1 Photodetectors
5.4.2 Photodiodes
5.4.3 Materials for Photodetectors
3.5 Applications of Photodetectors
5.1 Introduction to Optical Detectors in Fiber Optics

• Optical receivers convert optical signal (light) to electrical


signal (current/voltage)
 Hence referred ‘O/E Converter’
• Optical detectors perform the exact opposite
function of that of the optical sources; that is, they
convert electric power into optical power.
• Photodetector is the fundamental element of
optical receiver, followed by amplifiers and signal
conditioning circuitry.
• There are several photodetector types:
– Photodiodes, Phototransistors, Photon multipliers,
Photo-resistors etc.
• The design of optical receiver is much more complicated than that
of optical transmitter because the receiver must first detect weak,
distorted signals and then make decisions on what type of data was
sent.
5.2 Basic Requirements for detectors in Fiber optics
• Compatible physical dimensions (small size)
• Low sensitivity (high responsively) at the desired
wavelength and low responsively elsewhere
•  wavelength selectivity
• Low noise and high gain
• Fast response time  high bandwidth
• Insensitive to temperature variations
• Long operating life and low cost
• Minimum noise contribution
• High quantum efficiency / high spectral sensitivity
5.3 Types of Photo Detectors
• Photodiodes meet most the requirements, hence
widely used as photo detectors.
• Positive-Intrinsic-Negative (PIN) photodiode
• Avalanche Photo Diode (APD)
5. 3.1 PIN Diodes
• The most common optical detector used with fiber-
optic systems is the PIN diode
• The PIN diode is operated in the reverse-bias mode
• The low junction capacitance of the PIN diode allows for
very fast switching
• No internal gain, robust detector
• Low bias voltage [10-50 V @ = 850 nm, 5-15 V @ =
1300 –1550 nm]
pin energy-band diagram

Cut off wavelength:

hc 1.24 Cut off wavelength depends on the


c   μm
E g E g (eV ) band gap energy
5.3.2 Avalanche Photodiode (APD)
• Advanced version with internal gain M due to self multiplication
process
• Photodiodes are sufficiently reverse biased during normal operation
 no current flow without illumination, the intrinsic region is fully
depleted of carriers
• APD has an internal gain M, which is obtained by having a high
electric field that energizes photo-generated electrons.
• These electrons ionize bound electrons in the valence band upon
colliding with them which is known as impact ionization
• The newly generated electrons and holes are also accelerated by the
high electric field and gain energy to cause further impact ionization
 This phenomena is the avalanche effect
• High bias voltage [250 V @  = 850 nm, 20-30 V @ = 1300–1550
nm]
5.3.3 APD Verses PIN

•  
5.4 Optical Detection Principle
• The conversion of an optical into an electrical signal requires
the absorption of the incident light.
• The absorption leads to an excitation of an electron from the
valence to the conduction band.
• What is left in the valence band is a vacancy, which we call a
“hole”.
• Therefore, we speak about the
photo-generation of electron-hole
pairs, because the absorption
always leads to the generation of a
hole and an electron. Photogeneration of an electron hole pair.
5.4.1 Principles of Photodiodes
• As a photon flux Φ penetrates into a semiconductor, it will be
absorbed as it progresses through the material.

• If αs(λ) is the photon absorption coefficient at a wavelength λ, the


power level at a distance x into the material is

Absorbed photons
trigger photocurrent
Ip in the external
circuitry
Examples of Photon Absorption
5.4.2 Quantum Efficiency
• The quantum efficiency η is the number of the electron–hole
carrier pairs generated per incident–absorbed photon of
energy hν and is given by

 Ip is the photocurrent generated by a steady-state


optical power
 Pin incident on the photodetector.
5.4.3 Responsivity ()
Quantum Efficiency () = number of e-h pairs
generated / number of incident photons

Ip / q Ip q
   mA/mW
P0 / h P0 h
APD’s have an internal gain M, hence
 APD   PIN M
 where, M = IM/Ip
 IM : Mean multiplied current

M = 1 for PIN diodes


5.4.3 Materials for Photo detectors
 Most commonly used material for photodetectors are

1. Silicon
2. Gallium Arsenide (GaAs)
3. Germanium Indium Phosphide ( GInP).
 There wavelengths response depends on their composition

Materials Operating
Wavelength
Silicon 400-1000 nm
Germanium 600-1600 nm
GaAs 800-1000 nm
InGaAs 1000- 1700 nm
InGAsP 1100-1600
(doping dependent)
3.5 Applications

 Photodiodes are used in similar applications to other photodetectors,


such as photoconductors, charge-coupled devices, and photomultipliers.
 Photodiodes are used in consumer electronics devices such as compact
disc players, smoke detectors, and the receivers for remote controls in
televisions.
 Photodiodes are often used for accurate measurement of light intensity in
science and industry. They generally have a better, more linear response
than photoconductors.
 PIN diodes are much faster and more sensitive than ordinary p-n junction
diodes, and hence are often used for optical communications and in
lighting regulation
Thank You

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