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Chapter 12

Cap 12

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64 views

Chapter 12

Cap 12

Uploaded by

Felipe Souza
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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MOSFETs

Chapter 12
Topics Covered in Chapter 12
• Basic Concepts
• The Ohmic Region
• Digital Switching
• CMOS
• Power FETs
• MOSFET Amplifiers
• MOSFET Testing

Copyright © 2016 McGraw-Hill Education. Permission required for reproduction or display.


Basic Concepts
p-channel Enhancement-Mode MOSFET

• Normally “Off” device.


• Unipolar device (fast switching).
• A negative gate voltage is required for
current to flow through the device.
Basic Concepts
p-channel Enhancement-Mode MOSFET
Basic Concepts
• The SiO2 layer is very thin and is easily
damaged by static discharge or
excessive gate-source voltage.
• Proper ESD precaution must be
observed when handling.
Basic Concepts
n-channel Enhancement-Mode MOSFET

• Normally “Off” device.


• Unipolar device (fast switching).
• A positive gate voltage is required for
current to flow through the device.
Basic Concepts
n-channel Enhancement-Mode MOSFET
Basic Concepts
• The SiO2 layer is very thin and is easily
damaged by static discharge or
excessive gate-source voltage.
• Proper ESD precaution must be
observed when handling.
Basic Concepts
Basic Concepts

The minimum VGS required to create the inversion


layer is called the threshold voltage (VGS(th)).
Family of Curves
5 +10

3 VGS(V)
ID (mA) +5
2
+2.8
1
VGS(th)
0 0
VDS (V)
The Ohmic Region
Active Region

Ohmic
Region
Ohmic Region
• While operating in the ohmic region, the
MOSFET has predictable resistance
between the drain and the source.

VDS ( on )
RDS ( on ) 
ID ( on )
Ohmic Region
• While operating in the ohmic region, the
MOSFET behaves like a resistor.
VDS ( on )
RDS ( on ) 
ID ( on )
1V
RDS ( on ) 
3.3 mA
RDS ( on )  303 
Biasing in the Ohmic region
• The MOSFET is biased in the ohmic region
when: ID(sat) < ID(on) while VGS = VGS(on)
Switching between Cutoff & Saturation
Given: RDS = 5 Ω

VS = 0V, vout = VDD = 20 V


VS = 5V, vout = ?
RDS
v out  xVDD
RD  RDS
5
v out  x 20V
5   1k 
v out  99 mV
Switching between Cutoff & Saturation

Notice how Ch 2 never reaches 0V.


Decrease the V/div on the scope.
Switching between Cutoff & Saturation

RDS = 5 Ω V1 = 0V, vout = VDD = 20 V


V1 = 5V, vout = 99 mv
MOSFETS – Digital Switching
• Passive Load Switching occurs when
RDS(on) << RD.

vin = 0 V, vout = High


vin = High, vout = Low
MOSFETS – Digital Switching
• Active Load Switching
– The upper MOSFET (Q1)
acts like a large resistance.
– The lower MOSFET (Q2)
acts like a switch.
MOSFETS – Digital Switching

VDS ( active ) 10V


RD    5 k
ID ( active ) 2 mA
MOSFETS – Digital Switching

RD  5 k 

1V
RDS ( on )   500 
2 mA
CMOS MOSFETS

• Complementary Metal Oxide Semiconductor


• An n-channel and a p-channel MOSFET are
used.
• When the input voltage is low (0 V), the
output voltage is high.
• When the input voltage is high (+VDD), the
output voltage is low.
• Low power consumption.
CMOS MOSFETS

Input Q1 Q2 Output
0V On Off +VDD
+VDD Off On 0V
CMOS MOSFETS
Power FETs
• Power FETS
– VMOS
– TMOS
– hexFET
– Trench FET
– Wave FET
• Current Ratings of 1 A to > 200 A
• Power Ratings of 1 W to > 500 W
Power FETs
• No Thermal Runaway
– RDS(on) has a positive temperature coefficient.
– As the temperature ↑, RDS(on) also ↑ causing ID
to ↓ which in turn causes the temperature to ↓.
• Can be connected in parallel
– No current hogging occurs like in transistors.
– If one FET conducts more current, the
temperature ↑, RDS(on) also ↑ causing ID to ↓.
Power FETs
• A common application of a Power FET is
to act as an interface between a digital
circuit and a high power load.
E-MOSFET Amplifiers
• Applications include:
• High-frequency RF Amplifiers
• AB-Class Power Amplifiers
E-MOSFET Amplifiers
• Drain Current Formula
2
ID  k VGS  VGS ( th ) 
where k is a constant
ID ( on )
k 2
VGS ( on )  VGS ( th ) 
E-MOSFET Amplifiers
• Transconductance Formula

gm  2k VGS  VGS (th) 


E-MOSFET Amplifiers
• Voltage Gain & Impedance
Formulas
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
Given:
K = 104x10-3 A/V2
ID(on) = 600 mA
VGS(th) = 2.1 V
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
R2
Given: VG  xVDD
K = 104x10-3 A/V2 R1  R2
ID(on) = 600 mA
VGS(th) = 2.1 V 1M 
VG  x 12V
3 M   1M 
VG  3V VGS
E-MOSFET Amplifiers
Solve for:
2
VGS, ID, gm, vout
ID  k VGS  VGS ( th ) 
Given:
K = 104x10-3 A/V2
3V  2.1V 
3 2
ID(on) = 600 mA ID  104 x10
VGS(th) = 2.1 V
ID  84.24 mA

VGS  3V
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
Given: g m  2k VGS  VGS ( th ) 
K = 104x10-3 A/V2
ID(on) = 600 mA g m  2k 3V  2.1V 
VGS(th) = 2.1 V
g m  187.2 mS

VGS  3V , ID  84.24 mA
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
Given:
K = 104x10-3 A/V2
ID(on) = 600 mA
VGS(th) = 2.1 V
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
Given: AV  g m rd
K = 104x10-3 A/V2
ID(on) = 600 mA AV  187.2 mS 90.9  
VGS(th) = 2.1 V
AV  17.02
VGS  3V , ID  84.24 mA
g m  187.2 mS
rd  90.9 
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
Given: vout  AV vin
K = 104x10-3 A/V2
ID(on) = 600 mA vout  17.02 100 mV 
VGS(th) = 2.1 V
vout  1.702V

VGS  3V , ID  84.24 mA
gm  187.2 mS
rd  90.9 , AV  17.02
E-MOSFET Amplifiers
Solve for:
VGS, ID, gm, vout
Given: VGS  3V , ID  84.24 mA
K = 104x10-3 A/V2
ID(on) = 600 mA gm  187.2 mS
VGS(th) = 2.1 V
rd  90.9  , AV  17.02
vout  1.702V
E-MOSFET Amplifiers
MOSFET Testing
• Observe ESD Precautions.
• Due to construction, ohmmeter or DMM
testing is not very effective.
• A curve tracer is an effective method for
testing a MOSFET.
• Specialized circuits can also be used to
test a MOSFET.

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