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IGBT

The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a three-terminal semiconductor device that combines aspects of MOSFETs and BJTs. The IGBT has high input impedance like a MOSFET and low power loss like a BJT. It is controlled by a gate terminal and can be switched on and off by applying or removing a voltage at the gate. Internally, the IGBT consists of a MOSFET structure combined with a bipolar junction transistor structure to allow for high voltages and fast switching speeds. Its applications include power supplies, motor controls, and solar power inverters.

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Deepika Bairagi
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49 views7 pages

IGBT

The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a three-terminal semiconductor device that combines aspects of MOSFETs and BJTs. The IGBT has high input impedance like a MOSFET and low power loss like a BJT. It is controlled by a gate terminal and can be switched on and off by applying or removing a voltage at the gate. Internally, the IGBT consists of a MOSFET structure combined with a bipolar junction transistor structure to allow for high voltages and fast switching speeds. Its applications include power supplies, motor controls, and solar power inverters.

Uploaded by

Deepika Bairagi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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IGBT

Insulated Gate Bipolar Transistor (IGBT)


The term IGBT is a short form of insulated gate bipolar
transistor.
It is a three terminal device.
This device is designed to make use of the benefits of
both BJT and MOSFET devices. It combines the best
qualities of both to attain the characteristics of an optimal
device.
So, an IGBT has high input impedance like a MOSFET
and low on-state power loss as in a BJT.
The IGBT (insulated gate bipolar transistor) is a three-
terminal electronic component, and these terminals are
termed as emitter, collector and gate.
Two of its terminals namely collector and emitter are
associated with a conductance path and the remaining
terminal ‘G’ is associated with its control.
An IGBT is simply switched “ON” and “OFF” by
triggering and disabling its Gate terminal.
A constant +Ve voltage i/p signal across the ‘G’ and the
‘E’ will retain the device in its “ON” state, while
deduction of the i/p signal will cause it to turn “OFF” like
BJT or MOSFET.
Basic Structure & Working
IGBT is constructed virtually in the same manner as a
power MOSFET.
There is, however ; a major difference in the substrate.
The n+ layer substrate at the drain in a power MOSFET
is now substituted in the IGBT by a p+ layer substrate
called collector.
When gate is positive with respect to emitter and with
gate-emitter voltage more than threshold voltage of
IGBT, an n-channel is formed in the p-regions as in a
power MOSFET.
This n-channel short circuits the n− region with n+
emitter regions.
An electron movement in the n-channel, in turn, causes
substantial hole injection from p+ substrate layer into the
epitaxial n− layer. Eventually, a forward current is
established as shown in above fig.
The three layers p+, n− and p constitute a pnp transistor with p+ as emitter, n− as
base and p as collector. Also n−, p and n+ layers constitute npn transistor as shown
in below fig.

Here n− serves as base for pnp transistor and also as collector for npn transistor.
Further p serves as collector for pnp device and also as base for npn transistor. The
two pnp and npn transistors can, therefore, be connected as shown in fig to give the
equivalent circuit of an IGBT.
Application of IGBT
The main advantages of IGBT compared with various
kinds of transistors are low ON resistance, high
voltage -capacity, fast switching speed, and various
high voltage applications like PWM, SMPS, variable
speed control, AC to DC converter powered by solar
and frequency converter applications which operates
with a hundred’s of KHz.

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