DEE 20023-SEMICONDUCTOR DEVICES

SESI II : 2021/2022

ZAINAB MUSRI
COURSE COORDINATOR
SEMICONDUCTOR DEVICES
POLITEKNIK PORT DICKSON

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LESSON LEARNING OUTCOMES

o Understand basic principles of MOSFET

o Explain between NMOS and PMOS
o Outline physical structures and schematic symbols for both
MOSFETs
o Explain with the aid of a diagram, the operation difference in:
a. Depletion-mode MOSFET (D- MOSFET)
b. Enhancement-mode (E- MOSFET)
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LESSON LEARNING OUTCOMES

o Draw NMOS and PMOS as switches

o Write how NMOS and PMOS functions as switches
o Write functions as switches to the saturation operating regions of
MOSFET
o Construct circuits implementing MOSFET as switches
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MOSFET( Metal–Oxide–Semiconductor Field-Effect

Transistor )

Used for amplifying or switching electronic signals.

Four-terminal device with source (S), gate (G), drain

(D), and body (B) terminals.

Body of the MOSFET often is connected to the source

terminal, making it a three-terminal device .
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P channel of MOSFET (PMOS)
oIf the MOSFET is a p-channel or P-MOSFET , then the source
and drain are 'p+' regions and the body is a 'n' region.
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N channel of MOSFET (NMOS)

o If the MOSFET is an N-channel or N-MOSFET , then the source

and drain are 'n+' regions and the body is a 'p' region.
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Different between NMOS & PMOS)
NMOS PMOS
Source & Drain are from n Source & Drain are from p type
Fabrication type material material

Majority
Electron Hole
Carrier
Positive bias voltage at the Negative bias voltage at the
Biasing gate must be applied to create gate must be applied to create
a channel a channel.
Size Smaller compare to PMOS Bigger compare to NMOS

Speed Faster than PMOS Slower than NMOS

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Physical Structure & Symbol of Depletion MOSFET
 Depletion MOSFET (D-MOSFET)

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Construction of D MOSFET

o Channel is made from N type of material and substrate is P type material.

o The source and drain  terminals are connected through metallic  contacts to  n-channel
o The gate is also connected to a metal contact surface but remains insulated from the n-
channel by a very thin silicon dioxide (SiO2) layer.
o There is no current flow due to SiO2 dielectric layer.
o Substrate or body is connected internally to the source terminal and than grounded.
o For Depletion MOSFET to work properly, we can set VGS = 0, VGS positive or VGS
negative .
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o Substrate or body is connected internally to the source terminal and than

grounded.
o For Depletion MOSFET to work properly, we can set VGS = 0, VGS positive or
VGS negative .
i. VGS=0, VDS is applied to Drain & Source
o VDS is apply across to drain and source terminal as in a diagram. ID current will
flow in the channel and electron will be in the channel and attract to Drain
terminal because drain have a positive charge.
o When we increase VDS, ID also increase but after sometime ID become
constant.
o When VDS is increased, D terminal is more positive and depletion pn junction
become bigger and channel become narrow, so ID became constant.
o ID is known IDSS maximum ID current that can occurred.
 operation of D MOSFET 13

o When VGS= 0V, and VDD is applied , electron in the N channel will attract to positive
voltage , so current flow from drain to source through the conducting channel.
o When VDD is increased, the current flow into the channel will increase until all the
electron is contribute to the flow of current.
o After that, if VDD is increase, the ID become constant.
 operation of D MOSFET 14

• If gate now is given negative supply, Since gate is negative, it means electron
are on the gate. These electron repel the free electrons in n channel, leaving a
layer of positive ions in a part of the channel.
• In other words we have depleted the n channel some of its free electrons
• So less number of free electron is made available for current conduction through
n channel. Channel resistance increase
• The greater negative voltage on the gate is the lesser the current from source
to drain. Thus by changing the negative voltage on the gate, we can vary the
resistance of the n-channel and hence the current from source to drain.
 operation of D MOSFET 15

• The action with negative gate depends on upon depleting the channel free
electron, the negative - gate operation is called depletion mode.
• As the voltage at the gate become negative. The drain current become less as
shown in graph. The current flow will decrease as shown at graph.
 Enhancement MOSFET (E-MOSFET)

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Physical Structure & Symbol of Enhancement MOSFET
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Construction of E MOSFET

o Substrate is made of P type material, drain and

the source terminals connected to this n type
material through a metallic contact

o The SiO2 layer is to isolate the gate metallic

platform from p-type material.

o But unlike the depletion layer of MOSFET there

is no channel between drain and source terminal.
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Operation of E MOSFET
o The difference between depletion and
enhancement in building structure is that in
enhancement there is no substrate N along the
gate.

o When VGS= 0V, and voltage is applied to the

drain and source terminal, MOSFET remain off
because there is no N substrate between them.

o When VGS is given positive value, positive

charge at gate will push positive charge at the
substrate.
Minority charge (electron) inside P substrate
also effected and gather at the gate.
Operation of E MOSFET 20

o As the gate is increase, more and more electron

accumulate under the gate. Since these electron
cannot flow across insulated layer of SiO2 to the
gate, they accumulate at the surface of the
substrate just below the gate and combined with
a hole to form
an inversion layer .

o Inversion layer act as channel between drain

and source terminal.
o If we provide voltage between drain and source
(VDS) , current can flow through the channel.

o Thus drain current is control by the gate

potential.
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Operating regions of MOSFET
o Cut-off Region   -  with VGS < VThreshold   the gate-source voltage is lower than
the threshold voltage so the transistor is switched "fully-OFF" and IDS = 0, the
transistor acts as an open circuit

o Linear (Ohmic) Region   -  with VGS > VThreshold   and VDS > VGS the transistor

is in its constant resistance region and acts like a variable resistor whose value is
determined by the gate voltage, VGS

o Saturation Region   -  with VGS > Vthreshold the transistor is in its constant

current region and is switched "fully-ON". The current IDS = maximum as the
transistor acts as a closed circuit
Vthreshold - minimum gate-to-source voltage VGS that is needed to create a conducting path between the source
and drain terminals.
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o VGS is always positive, IDSS = 0 when VGS< VT

o As VGS increases above VT, ID increases
o If VGS is kept constant and VDS is increased,
then ID saturates (IDSS)
o The saturation level, VDS sat is reached.
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Advantages of MOSFET

It can be easily used in case of high current

applications.

are easy to manufacture

much higher input impedance compare to JFET.

The operational speed of MOSFET is higher

than that of JFET.
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Disadvantages of MOSFET

MOSFET are sensitive to electric charges, it cannot be

held by the fingers without special equipment.

It cannot be taken out from the circuit when

the supply is still on .

Legs must be shortage when storing

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The circuit of n-channel MOSFET as Switch Off

 The input and Gate are grounded (0v)

 Gate-source voltage less than threshold
voltage VGS < VTH
 MOSFET is "fully-OFF" (Cut-off region)
 No Drain current flows ( ID = 0 )
 MOSFET operates as an "open switch”
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The circuit of n-channel MOSFET as Switch On

 The input and Gate are connected to VDD

 Gate-source voltage is much greater than threshold
voltage VGS > VTH
 MOSFET is "fully-ON" (saturation region)
 Max Drain current flows
( ID = VDD / RL )
 VDS = 0V (ideal saturation)
 MOSFET operates as a "closed switch”
 MOSFET AS A SWITCH

• MOSFET are generally use as a switch because of

their threshold application.
• When gate to source voltage (VGS) is less than the
threshold value. MOSFET is OFF
• When gate to source voltage (VGS) is greater than
the threshold value. MOSFET is ON

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 APPLICATION OF NMOS AS SWITCH
• Enhancement-mode N-channel MOSFET is being used
to switch a simple lamp “ON” and “OFF” .

• The gate input voltage VGS is taken to an appropriate

positive voltage level to turn the device and therefore
the lamp load either “ON”, ( VGS = +ve ) or at a zero
voltage level that turns the device “OFF”, ( VGS = 0V ).

• If the load of the lamp was to be replaced by a coil or

solenoid or relay a “flywheel diode” would be required
in parallel with the load to protect the MOSFET from
generated back-emf.

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Thanks!
Any Questions ?
You can find me at:
[email protected]