EXPERIMENT-5

TO SHOW THE TUNNELING EFFECT IN TUNNEL DIODE USING I-V

CHARACTERISTICS

BY: SAPNA (19HPH2541)

RITESH(19HPH2535)
 APPARATUS::

o The instrument comprises of following

builtin parts::
1.Inbuilt Regulated DC Power supply of +5 Volts.
2.V1= Voltage across Resistance R3.
v2= Voltage across Tunnel Diode .
3.Current Control Pot R1 on Front panel.
4.Tunnel Diode –IN 3717
INTRODUCTION ::

 Invented by Dr. Leo Esaki in 1958.

 Also called Esaki diode.
 Basically, it is heavily doped PN- junction.
 These diodes are fabricated from germanium,
gallium,arsenide & GalliumAntimonide.
 Symbol of a Tunnel diode 
DESCRIPTION ::
 A Tunnel Diode is a heavily doped p-n
junction diode. The tunnel diode shows
negative resistance.
 By negative resistance we mean that ,When
voltage value increases, current flow
decreases.
 Doping density of about 1000 times greater
than ordinary junction diode.
 Tunnel diode works based on Tunnel Effect.
BASIC PRINCIPLE OF OPERATION :
The operation depends upon quantum mechanics principle
known as “tunneling”.
The movement of valence electrons from valence energy band
to conduction band with no applied forward voltage is called
“tunneling”.
Intrinsic voltage barrier is reduced which enhanced tunneling.
Enhanced tunneling causes effective conductivity
 TUNNELING EFFECT ::
In electronics, Tunneling is
known as a direct flow of
electrons across the small
depletion region from n-side
conduction band into the p-
side valence band. In a p-n
junction diode, both positive
and negative ions form the
depletion region. Due to these
ions, in-built electric potential
or electric field is present in
the depletion region. This
electric field gives an electric
force to the opposite direction
of externally applied voltage.
As the width of the depletion
layer reduces, charge carriers
can easily cross the junction.
Charge carriers do not need
any form of kinetic energy to
move across the junction.
Instead, carriers punch
through junction. This effect
is called Tunneling and hence
the diode is called Tunnel
Diode.
WHY TUNNELING DEVICES ??
*Due to Tunneling, when the value of forward voltage is low value of forward current
generated will be high. It can operate in forward biased as well as in reverse biased.
*Due to high doping, it can operate in reverse biased. Due to the reduction in barrier
potential, the value of reverse breakdown voltage also reduces. It reaches a value of zero.
*Due to this small reverse voltage leads to diode breakdown. Hence, this creates negative
resistance region.
*Advantage of this quantum effect device
 Works at room temperature
 High switching speed
 Low power consumption
TUNNEL DIODE WORKING PHENOMENON
 Unbiased Tunnel Diode
In an unbiased tunnel diode, no voltage will be applied to
the tunnel diode. Here, due to heavy doping conduction
band of n – type semiconductor overlaps with valence band
of p – type material. Electrons from n side and holes from p
side overlap with each other and they will be at same energy
level.
Some electrons tunnel from the conduction band of n-region
to the valence band of p-region when temperature increases.
Similarly, holes will move from valence band of p-region to
the conduction band of n-region. Finally, the net current will
be zero since equal numbers of electrons are holes flow in
opposite direction.
 Small Voltage Applied to the Tunnel Diode
When a small voltage, that has lesser value than
the built-in voltage of the depletion layer, is
applied to the tunnel diode, there is no flow of
forward current through the junction.
Nevertheless, a minimal number of electrons
from the conduction band of n region will start
tunneling to valence band in p region.
Therefore, this movement creates a small
forward biased tunnel current. When a small
voltage is applied, tunnel current starts to flow.
 Increased Voltage Applied to the
Tunnel Diode
When the amount of voltage applied is
increased, the number of free electrons
generated at n side and holes at p side is
also increased. Due to voltage increase,
overlapping between the bands are also
increased.
Maximum tunnel current flows when the
energy level of n-side conduction band
and the energy level of a p-side valence
band becomes equal.
 Largely Increased Voltage Applied to
the Tunnel Diode
The tunneling current will be zero when
applied voltage is increased more to the
maximum. At this voltage levels, the
valence band and the conduction band
does not overlap. This makes tunnel diode
to operate same as a PN junction diode.
 V-I CHARACTERISTICS OF TUNNEL DIODE
 Due to forward biasing, because of heavy
doping conduction happens in the diode. The
maximum current that a diode reaches is Ip and
voltage applied is Vp. The current value
decreases, when more amount of voltage is
applied. Current keeps decreasing until it
reaches a minimal value.
 The small minimal value of current is Iv. From
the above graph, it is seen that from point A to
B current reduces when voltage increases. That
is the negative resistance region of diode. In
this region, tunnel diode produces power
instead of absorbing it.
PROCEDURE::
1. Connect the instrument to the mains 230 Volts AC.
2. Set fully anticlockwise position .
3. Switch ON the instrument using ON/OFF indicator switch .
4. Adjust very slowly and continuously until the voltage (or ) across the diode is 165 mV . Measure the voltage
across .
5. Adjust for 20 mV. Measure the voltage across . Record the results in table.
6. Repeat the step 6 for different values of in the steps of 10mV and note down the values . Do not exceed the max
Voltage =500mV .
7. Calculate the current = / for every value of .
8. Also calculate the resistance = / for every value of (or ).
9. Plot the characteristics from the data .
10. Plot the voltage ( )versus Resistance () for the Tunnel Diode .
OBSERVATION TABLE ::
(or ) = / =/
(in mV) (in mV) (in mA)
20 82 2.48 8.06
30 110 3.33 9.009
50 141 4.27 11.70
60 147 4.45 13.48
170 79 2.39 71.12
180 77 2.33 77.25
190 79 2.39 79.49
200 76 2.30 86.95
250 51 1.54 162.33
300 46 1.39 215.82
400 12 0.36 1111.11
APPLICATIONS OF TUNNEL DIODE ::
 Tunnel diode can be used as a switch, amplifier, and oscillator.
 Since it shows a fast response, it is used as high frequency component.
 Tunnel diode acts as logic memory storage device.
 They are used in oscillator circuits, and in FM receivers. It is used as an ultra- high
speed switch due to tunneling (which essentially takesplace at speed of light). It has
switching time of nanoseconds or picoseconds.
 Used as logic memory storage device.
 In satellite communication equipment, they are widely used.
 Due to its feature of –ive resistance, it is used in relaxation oscillator circuits. Since it
is a low current device, it is not used more.