Chapter 1 - A - Semiconductor Physics - Part A - Revised 7
Chapter 1 - A - Semiconductor Physics - Part A - Revised 7
where
K is the Boltzmann constant: K =1.38064852 × 10-23 m2 kg s-
2 K-1
A diode is formed by
joining a p-type
semiconducting material
and a n-type
semiconducting material.
(Left) Doping concentration in a pn junction. The dotted lines are the actual net charge
density (the tails are exaggerated) and the solid line represents the assumed charge
density in the depletion approximation.
(Right) The electric field in a pn junction.
Built-in Potential
• unbiased
In
equilibrium, the following condition always holds:
1. Diffusion current of electrons = Drift current of electrons.
2. Diffusion current of holes = Drift current of holes.
Consider just the holes only:
-Dp dp/dx q = μp p E q
Vj = V(xp) – V(xn)
Class Exercises
• Is there any electric field outside the depletion
region? Ans: By Gauss’s Law, the answer is NO.
• If NA and ND are on the order of 1016 and 1016
respectively. The intrinsic density is 1010. What
is the junction potential? Ans: VT = 26mV
ln(1016 x 1016/1020)= 720mV
• Vj is a localized value. It cannot be directly
measured.
Derivation of Maximum
Potential Right at the
Junction
We are going to use the following formula to
work out the electric field.
Derivation of Maximum Electric field at
the PN junction
The volume charge in p-side of the depletion region should be equal to the
volume charge in the n-side of the depletion region. Therefore,
Or
= -- (2)
(2)/(1):
Graphical Illustration of Junction Capacitance
of IN4148 under a Reverse Bias
What happens when the diode is under
reverse bias?
• External reverse bias adds to the built-in potential of the pn junction.
• The shaded regions below illustrate the increase in the characteristics of the
space charge region due to an externally applied reverse bias, vD.
•
Homework
Useful Formula
1/ Find built-in potential and depletion-region width for a given diode
Given data: On p-type side: NA = 1017/cm3; On n-type side: ND =
1020/cm3
Assumptions: Room-temperature operation with VT = 0.025 V
Answer:
Exercise 1: Job Interview Questions
13. Explain what are the two mechanisms of breakdown in p-n junction.
Avalanche and Zener breakdown
14. Name the breakdown mechanism in a lightly doped p-n junction under reverse biased condition.
Avalanche breakdown.
15. Name the breakdown mechanism in a highly doped p-n junction under reverse biased condition.
Avalanche breakdown.
13. Explain what are the two mechanisms of breakdown in p-n junction.
Avalanche and Zener breakdown
14. Name the breakdown mechanism in a lightly doped p-n junction under reverse biased condition.
Avalanche breakdown.
15. Name the breakdown mechanism in a highly doped p-n junction under reverse biased condition.
Avalanche breakdown.