Bipolar Junction Transistor: Unit 3
Bipolar Junction Transistor: Unit 3
E B C
n
p
n
Terminals & Operations
• Three terminals:
– Base (B): very thin and lightly doped central region (little
recombination).
– Emitter (E) and collector (C) are two outer regions sandwiching
B.
• Normal operation (linear or active region):
– B-E junction forward biased; B-C junction reverse biased.
– The emitter emits (injects) majority charge into base region and
because the base very thin, most will ultimately reach the
collector.
– The emitter is highly doped while the collector is lightly doped.
– The collector is usually at higher voltage than the emitter.
Terminals & Operations
Operation Mode
Operation Mode
• Active:
– Most importance mode, e.g. for amplifier operation.
– The region where current curves are practically flat.
• Saturation:
– Barrier potential of the junctions cancel each other out
causing a virtual short.
– Ideal transistor behaves like a closed switch.
• Cutoff:
– Current reduced to zero
– Ideal transistor behaves like an open switch.
Operation Mode
Circuit Symbols
Circuit Configuration
I-V Characteristics
IC
IC VBE3
VCE VBE2
VBE
VBE1
VBE3 > VBE2 > VBE1
VCE
• Collector current vs. vCB shows the BJT looks like a current
source (ideally)
– Plot only shows values where BCJ is reverse biased and so BJT in active
region
• However, real BJTs have non-ideal effects
I-V Characteristics
This configuration is more complex than the other two, and is less common
due to its strange operating characteristics.
Used for high frequency applications because the base separates the input and
output, minimizing oscillations at high frequency. It has a high voltage gain,
relatively low input impedance and high output impedance compared to the
common collector.
BJT Analysis
• Here is a
common
emitter BJT
amplifier:
• What are the
steps?
Input & Output
Using these max and min values for the base current on the collect
circuit load line, we find:
At Max Input Voltage: VCE = 5 V, iC = 2.7mA
At Min Input Voltage: VCE = 7 V, iC = 1.9mA
Recall: At Q-point: VCE = 5.9 V, iB = 2.5ma
AC Characteristics-Collector Circuit
The pnp Transistor
• Basically, the pnp transistor is similar to the
npn except the parameters have the opposite
sign.
– The collector and base currents flows out of the
transistor; while the emitter current flows into the
transistor
– The base-emitter and collector-emitter voltages
are negative
• Otherwise the analysis is identical to the npn
transistor.
The PNP Transistor
In p u t E pnp C O u tp u t
p+ n p c ir c u it c ir c u it (c)
B IB
(a)
E m itte r B a se C o lle c t o r
E B C V EB V C B
E E B C
x
E
p n (0)
IE IC E le c t r o n
p n (x ) IE D iff u s io n IC
H o le
n p(0 ) H o le d iffu s io n d rift
(b) n p (x ) pno
n po R e c o b in a tio n
(d)
W E B
W B W E le c tro n s L eakage c u rre n t
B C
IB V
V EB C B
IB
(a) A schematic illustration of pnp BJT with 3 differently doped regions. (b) The
pnp bipolar operated under normal and active conditions. (c) The CB
configuration with input and output circuits identified. (d) The illustration of
various current component under normal and active conditions.
The pnp Transistor
Gain (Av)
is a value that indicates the magnitude relationship between the
circuit’s input and output signals. If the gain of an amplifier is 100,
then the output is 100 times greater than the input signal
The ratio of circuit output voltage to input voltage is generally
referred to as voltage gain (Av).
The output of a class A amplifier conducts for the full 360° of the cycle.
The Q-point is set at the middle of the load line so that the AC signal can
swing a full cycle.
The output conducts between 180° and 360° of the AC input signal.
Class C
Class C usually not used for delivering large amount of power, thus the
efficiency is not given here.