Chapter 1c

BJT
BJTSmall
SmallSignal
Signal
Modelling
Modelling

EN564 Analogue Electronics

EUE3233 Analogueand Instrumentation
Electronics
Topic objectives

• At the end of the course you will be able to

• Understand about the small signal analysis of circuit network using r e model
and hybrid equivalent model
• Understand the relationship between those two available model for small
signal analysis

2
 INTRODUCTION:TRANSISTOR MODELING

• To begin analyze of small-signal AC response of BJT

amplifier the knowledge of modeling the transistor is
important.
• The input signal will determine whether it’s a small
signal (AC) or large signal (DC) analysis.
• The goal when modeling small-signal behavior is to
make of a transistor that work for small-signal enough to
“keep things linear” (i.e.: not distort too much) [3]
• There are two models commonly used in the small
signal analysis:
a) re model
b) hybrid equivalent model
3
 How is amplification done?
• Conservation; output power of a
system cannot be larger than its
input and the efficiency cannot
be greater than 1
• The input dc plays an important
role for the amplification to
contribute its level to the ac
domain where the conversion
will become as η=Po(ac)/Pi(dc)

4
 VCC

DC supply  • O/p coupling

“0” potential R1 RC capacitor 
s/c
• I/p coupling C1 • Large values
C2 +
capacitor  • Block DC
RS +
s/c Vi R2 RE C3
Vo
and pass AC
• Large values VS - signal
-
• Block DC • Bypass
and pass AC capacitor  s/c
signal Voltage-divider configuration • Large values
under AC analysis

R1 RC

Redraw the voltage-divider

+ configuration after removing dc
RS + Vo supply and insert s/c for the
Vi
-
R2
capacitors
VS
-

5
 Modeling of
BJT begin
HERE!

Ii Transistor small- Io
B signal ac C
R1 RC + equivalent cct
Zi +
E
RS Rc
+ Vi R1 R2
Zo Vo
RS + Vo
Vi R2
VS
- - -
VS
-

Redrawn for small-signal AC analysis

6
 AC bias analysis :

1) ZERO all DC sources

2) Coupling and Bypass capacitors are short cct. The

effect of there capacitors is to set a lower cut-off
frequency for the cct.

3) Inspect the cct (replace BJTs with its small signal

model:re or hybrid).

4) Solve for voltage and current transfer function, i/o

and o/p impedances.
7
 IMPORTANT PARAMETERS

• Input impedance, Zi
• Output impedance, Zo
• Voltage gain, Av
• Current gain, Ai

Input Impedance, Zi(few ohms  M)

The input impedance of an amplifier is the value as a

load when connecting a single source to the I/p of
terminal of the amplifier.
8
 Two port system
-determining input impedance Zi
Rsense
Vi
+
Ii
+ Zi 
VS Zi Vi Two-port Ii
- system
- Vs  Vi
Ii 
Rsense
Determining Zi

• The input impedance of transistor can be approximately

determined using dc biasing because it doesn’t simply change
when the magnitude of applied ac signal is change.
9
 Demonstrating the impact of Zi
Rsource

+ 600 Ω +
Zi
VS=10mV 1.2 k Ω
Vi Two-port
- system
-

Ideal source, Rsource  0Ω

Full 10mV applied to the system

With source impedance, Rsource  600Ω

ZiVs 1.2k (10m)
Vi    6.6mV
Zi  Rsource 1.2k  600
10
Example 6.1: For the system of Fig. Below, determine
the level of input impedance
1k Ω

+ Rsense +
Zi
VS=2mV Two-port
Vi=1.2mV
- system
-

Solution:
Vs  Vi 2m  1.2m 0.8m
Ii     0.8A
Rsense 1k 1k

Vi 1.2m
Zi    1.5k
Ii 0.8

11
 Output Impedance, Zo (few ohms  2M)

The output impedance of an amplifier is determined at

the output terminals looking back into the system with
the applied signal set to zero.
Rsense
Rsource V  Vo
+ Io 
Vo
Io +
V
Rsense
Vs=0V Two-port Zo
system -
-
Vo
Zo 
Determining Zo
Io
Iamplifier
IL

IRo For Ro  RL
Zo  RL  Zo become open cct
Zo=Ro
RL
IL  IRo

12
Example 6.2: For the system of Fig. below, determine the
level of output impedance
Rsense

Two-port + 20 k Ω
system +
Zo
V=1 V
Vs=0V Vo=680mV -
-

Solution:
V  Vo 1  680m 320m
Io     16A
Rsense 20k 20k

Vo 680m
Zo    42.5k
Io 16
13
Example 6.3: For the system of Fig. below, determine Zo
if V=600mV, Rsense=10k and Io=10A
Rsense
Rsource
+
Io +
Vs=0V Two-port Vo V
Zo
system -
-

Solution:
V  Vo
Io 
Rsense Vo 500m
Zo    50k
Vo  V  Io Rsense Io 10
 600m  10 10k
 500mV

14
Example 6.4: Using the Zo obtained in example 6.3,
determine IL for the configuration of Fig below if
RL=2.2 k and Iamplifier=6 mA.

Solution:
Iamplifier
IL Current divider rule :
IRo Zo(Iamplifier)
RL
IL 
Zo=Ro Zo  RL
50k (6m)

50k  2.2k
 5.747mA

15
 Voltage Gain, AV

• DC biasing operate the transistor as an amplifier.

Amplifier is a system that having the gain behavior.
• The amplifier can amplify current, voltage and power.
• It’s the ratio of circuit’s output to circuit’s input.
• The small-signal AC voltage gain can be determined
by:
Vo
Av 
Vi

16
By referring the network below the analysis are:

no load
Rsource
Vo
+ + + Av NL  RL  Ω (open cct)
VS Zi
AvNL Vo
Vi
Vi
-
- -

with source resistance :

Determining the no load voltage gain
Vo Zi
Avs   Av NL
Vs Zi  Rs

17
 Example 6.5: For the BJT amplifier of fig. below,
determine: a)Vi b) Ii c) Zi d) Avs
Rs Solution :
+ Vo
+ 1.2 kΩ
Zi
+
BJT amplifier a) AvNL 
VS=40mV AvNL=320 Vo=7.68V
Vi
Vi Vo 7.68
-
- - Vi    24mV
AvNL 320

Vs - Vi 40m  24m
b) Ii    13.33A
Rs 1 .2 k
Rs  Rsource

Vi 24m
c) Zi    1.8k
Ii 13.33

Zi 1.8k
d) Avs  AvNL  (320)  192
Zi  Rs 1.8k  1.2k

18
 Current Gain, Ai

• This characteristic can be determined by:

Io
Ii
+
+
Zi BJT Vo
Vi
amplifier RL Vo
Io  
-
-
RL
Determining the loaded current gain

Io Vo / RL VoZi Zi
Ai    Ai   Av
Ii Vi / Zi ViRL RL

19
 re TRANSISTOR MODEL

• employs a diode and controlled current source to

duplicate the behavior of a transistor.
• BJT amplifiers are referred to as current-controlled
devices.

Common-Base Configuration

Common-base BJT transistor

re model
re equivalent cct.

20
 Ic Ie
C E
25mV
re   I E is the DC level of
I E(dc)
B B
emitter current
Common-base BJT transistor - pnp

Therefore, the input impedance, Zi = re

Ic that less than 50Ω.

Ie
e c For the output impedance, it will be as
follows;
Ic  α Ie
b b Ie=0A Ic
re model for the pnp common-base e c
configuration

Vs=0V re Ic  0A
b b
Ie Ic
e c
isolation Determining Zo for common-base
re Ic  α Ie part,
b b Zi=re Zo  
21
common-base re equivalent cct
The common-base characteristics

22
 Ie BJT common-base
transistor amplifier Ic  α Ie Io
e c
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Av=Vo/Vi for the common-base configuration

Vo   IoRL    Ic  RL  IeRL
Vi  IeZi  Iere
Voltage gain,
Vo IeRL  RL
Av   Av  
RL
Vi Iere re re

23
 Ie BJT common-base
transistor amplifier Ic  α Ie Io
e c
+
+
Vi re Zo   RL
Zi Vo
-
- b b

Defining Ai=Io/Ii for the common-base configuration

Io  Ic Ie
Ai   
Ii Ie Ie
Current gain,
Ai    1
24
Example 6.6: For a common-base configuration in figure
below with IE=4mA, =0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Zi b) Calculate Av if RL=0.56k
c) Find Zo and Ai

Ie Ic
e c

re Ic  α Ie
b b

common-base re equivalent cct

25
Solution:
26m 26m
a) Zi  re    6.5
IE 4m

RL 0.98(0.56k )
b) Av    84.43
re 6.5

c) Zo  Ω
Io
Ai      0.98
Ii

26
  CB equivalent model

27
Example 6.7: For a common-base configuration in previous
example with Ie=0.5mA, =0.98 and AC signal of 10mV is
applied, determine:
a) Zi b) Vo if RL=1.2k c) Av d)Ai e) Ib

Solution :
d) Ai    0.98
Vi 10m
a) Zi    20 e) Ib  Ie - Ic
Ie 0.5m
b) Vo  IcRL  IeRL  Ie - Ie
 0.98(0.5m)(1.2k)  0.5m(1  )
 588mV  0.5m(1  0.98)
 10A
Vo 588m
c) Av    58.8
Vi 10m

28
 Common-Emitter Configuration

Common-emitter BJT transistor

re model
re equivalent cct.
Still remain controlled-current source (conducted
between collector and base terminal)
Diode conducted between base and emitter terminal

Input Output
Base & Emitter terminal Collector & Emitter terminal

29
 c
C
Ic
Ic
Ic   Ib
Ib
b
Ib
B

E E
e e
common-emitter BJT transistor
re model npn common-emitter configuration
Vi
Zi  (1)
Ii
c
Vi  Vbe  Iere  Ibre and
Ic
subtitute into (1) gives Ic   Ib
Ii=Ib
b
Vbe  Ibre
Zi   + + Ie
Ib Ib Vi Vbe re

Zi   re -
e - e

Determining Zi using re equivalent model

Z i ranges between hundred to 6 ~ 7k 
30
  Improved CE model

31
The output graph

32
 Output impedance Zo

  model for CE configuration including the effects of .

Ii=Ib = 0A
b c

Vs=0V Ib  0A
ro
Zo
𝛽re𝑟 𝑒
 
e e

Zo  ro
if ro is ignored thus the
Zo  Ω (open cct, high impedance)
33
 Ii=Ib BJT common-emitter Io  Ic   Ib
transistor amplifier Io
e c
+
+
Vi 𝛽 𝑟r𝑒e Zo   RL
Zi  re   Vo
-
- b b

Determining voltage and current gain for the

common-emitter amplifier

Vo   IoRL   Ic  RL   IbRL Current gain,

Vi  IiZi  Ibre Io Ic  Ib
Ai   
Ii Ib Ib
Voltage gain,
Vo  IbRL
Ai  
Av  
Vi Ib re

RL
Av  
re 34
Example 6.8: Given =120 and IE(dc)=3.2mA for a common-
emitter configuration with ro=  , determine:

a) Zi b)Av if a load of 2 k is applied c) Ai with the 2 k load

Solution :
26m 26m
a) re    8.125
IE 3.2m
Zi  re  120(8.125)  975

RL 2k
b)Av      246.15
re 8.125

Io
c) Ai     120
Ii

35
Example 6.9: Using the npn common-emitter configuration,
determine the following if =80, IE(dc)=2 mA and ro=40 k

a) Zi b) Ai if RL =1.2k  c) Av if RL=1.2k 
Ii=Ib
b c Solution :
Io
26m 26m
 Ib a) re    13
r𝛽e𝑟 𝑒 ro RL IE 2m
 
Zi  re  80(13)  1.04k
e
re model for the C-E transistor configuration

36
Solution (cont)
Io IL
b)Ai  
Ii Ib
ro(Ib)
IL 
ro  RL
ro ( Ib)
ro  RL ro 40k
Ai     (80)
Ib ro  RL 40k  1.2k
 77.67

RL ro 1.2k 40k
c)Av      89.6
re 13

37
Hybrid Equivalent Model

• re model is sensitive to the dc level of operation that results in an

input resistance that varies with the dc operating point
• Hybrid model parameter are defined at an operating point that may
or may not reflect the actual operating point of the amplifier

38
 Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.

39
Determination of parameter

40
 General h-Parameters for any
Transistor Configuration

  = input resistance
= reverse transfer voltage ratio ()
= forward transfer current ratio ()
= output conductance
41
CE hybrid equivalent circuit

42
CB hybrid equivalent circuit

43
 Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified

44
 Common-Emitter re vs. h-Parameter Model

45
Common-Emitter h-Parameters

hie  re
h fe   ac

46
 Common-Base re vs. h-Parameter Model

47
Common-Base h-Parameters

hib  re
h fb    1

48
Summary

Common-Emitter Fixed-Bias
Configuration
The input is applied to the base
The output is taken from the
collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and
output is 180
Summary

Common-Emitter
Fixed-Bias
Configuration
AC equivalent

re,model
Summary

Common-Emitter
Fixed-Bias
Calculations
𝑍  𝑖 =𝑅 𝐵 ∥ 𝛽 𝑟 𝑒
Input
Z i  βre RE 10 βre
Io βRB ro
impedance: Ai  
I i (ro  RC )(RB  βre )
Zo  RC||rO Current gain:
Output Zo  RC
Ai  β ro 10 RC , RB 10 βr e
ro 10 RC

impedance:
Vo (R ||r )
Av   C o
Vi re Zi
Voltage gain: Current gain Ai   AV
RC RC
Av  
re
ro 10 RC
from voltage gain:
Summary

Common-Emitter Voltage-Divider Bias

re model requires you to

determine , re, and ro.
Summary
Current gain
Common-Emitter Io R ro
Ai  
Voltage-Divider Bias I
I i (ro  RC )(R    re )
R 
Ai  o 
Calculations r 10R
I i R    re o C
Io
Ai    ro 10RC , R 10 re
Input impedance Output impedance Ii
R   R1 || R2 Zo  RC || ro
Current gain from Av
Zi  R  || βre Zo  RC ro 10RC Zi
Ai   Av
RC
Voltage gain
Vo  RC || ro
Av  
Vi re
Vo R
Av   C ro 10R C
Vi re
Summary

Common-Emitter Emitter-Bias
Configuration
Summary

Impedance Calculations
Input impedance:

Zi  RB || Zb
Zb   re  (   1)RE
Zb  (re  RE )
Zb   RE

Output impedance:
Zo  RC
Summary

Gain Calculations
Voltage gain:
Vo R
Av   C
Vi Zb
Vo RC
Av   Z b (re  RE )
Vi re  RE
Vo R
Av   C Z b   RE
Vi RE

Current gain: Current gain from Av:

Io  RB Zi
Ai   Ai   Av
I i RB  Zb RC
Summary

Emitter-Follower Configuration

This is also known as the common-collector configuration.

The input is applied to the base and the output is taken from the emitter.
There is no phase shift between input and output.
Summary

Impedance
Calculations
Input impedance:

Zi  RB ||Z b
Zb  βre  (β  1)RE
Zb  β(re  RE )
Zb  βRE

Zo  RE||re
Output impedance: Zo  re RE  re
Summary

Gain Calculations
Voltage gain:
Vo RE
Av  
Vi RE  re
Vo
Av  1 RE  re , RE  re  RE
Vi

Current gain:
βRB
Ai  
RB  Z b
Zi
Current gain from voltage gain: Ai   Av
RE
Summary

Common-Base Configuration
The input is applied to the emitter

The output is taken from the

collector

Low input impedance.

High output impedance

Current gain less than unity

Very high voltage gain

No phase shift between input

and output
Summary

Calculations
Input impedance:
Z i  RE || re

Output impedance:
Zo  RC

Voltage gain:
Vo RC RC
Av   
Vi re re

Current gain:
Io
Ai     1
Ii
Summary

Common-Emitter Collector Feedback

Configuration

• A variation of the common-emitter fixed-bias configuration

• Input is applied to the base
• Output is taken from the collector
• There is a 180 phase shift between the input and output
Summary

Calculations
re
Zi 
Input impedance: 1 RC

β RF

Output impedance: Zo  RC || RF

Vo R
Voltage gain: Av   C
Vi re

Current gain:
Io βRF
Ai  
Ii RF  βRC
Io R
Ai   F
Ii RC
Summary

Collector DC Feedback
Configuration
This is a variation of the common-
emitter, fixed-bias configuration
• The input is applied to the
base
• The output is taken from
the collector
• There is a 180 phase shift
between input and output
Summary

Calculations
Input impedance:
re
Zi 
1 RC

β RF

Output impedance:
Zo  RC||RF

Voltage gain: Ai 
Io

 RF
Ii RF   RC
Av 
Vo R
 C Current gain: Io R
Vi re Ai   F
Ii RC