SCR

Gate Characteristics
Design
Thyristor Ratings
Requirements of the gate circuit
 Thyristor ratings
(V,I,P and temperature rating within which the SCR can be used without
malfunction /Damage

• Thyristor ratings or SCR ratings are very much required for

operating it in a safe zone.
• The reliable operation can be done when a thyristor does not
violate its voltage and current rating during working period.
• A thyristor, or SCR may have several ratings, such as voltage,
current, power, dv/dt, di/dt, turn on time, turn off time, etc.
• Generally these ratings are specified in the data sheet given by
manufacturer.
• Ratings and specifications serve as a link between the
designer and the user.
 Anode Voltage Rating
This rating gives us a brief idea about withstanding power of a thyristor in
forward blocking made in the absence of gate current.

• Peak Working Forward Blocking or Forward OFF State Voltage (VDWM)

It specifies the maximum forward voltage (positive voltage that applied across
anode and cathode) that can be withstand by the SCR at the time of working.
• Peak Repetitive Forward Blocking Voltage (VDRM)
It specifies the peak forward transient voltage that a SCR can block repeatedly
or periodically in forward blocking mode. This rating is specified at a maximum
allowable junction temperature with gate circuit open. During commutation
process, due to high decreasing rate of reverse anode current a voltage spike
Ldi/dt is produced which is the cause of VDRM generation.
• Peak Non-Repetitive or Surge Forward Blocking Voltage (VDSM)
It is the peak value of the forward transient voltage that does not appear
periodically. This type of over voltage generated at the time of switching
operation of circuit breaker. This voltage is 130 % of VDRM), although it lies
under the forward break over voltage (VBD).
• Peak Working Reverse Voltage (VRWM)
It is the maximum reverse voltage (anode is negative with respect to
cathode) which can be withstand by the thyristor repeatedly or
periodically. It is nothing but peak negative value of the AC sinusoidal
voltage.
• Peak Repetitive Reverse Voltage (VRRM)
It is the value of transient voltage that can be withstand by SCR in reverse
bias at maximum allowable temperature. This reason behind the
appearance of this voltage is also same as VDRM.
• Peak Non Repetitive Reverse Voltage (VRSM)
It implies the reverse transient voltage that does not appear repetitively.
Though this voltage value is 130% of VRRM, it lies under reverse break over
voltage, VBR.

• Forward ON State voltage Drop (VT)

This is the voltage drop across the anode and cathode when rated current
flows through the SCR at rated junction temperature. Generally this value
is lie between 1 to 1.5 volts.
• Forward dv/dt Rating
• When we apply a forward voltage to the thyristor Junction
J1 and J3 are forward biased whereas junction J2 is reverse
biased and hence it acts a capacitor.
• So due to Cdv/dt a leakage current flows through the device.
This value of current will increase with the value of dv/dt. One
thing we have to keep in mind that voltage value is not the
reason behind flowing of leakage current, the reason is the
rate of voltage increasing.
• The value of capacitance of the junction is constant hence
when dv/dt increases to a suitable value that leakage current
occurs a avalanche breakdown across junction J2.
• This value of dv/dt in called forward dv/dt rating which can
turn on the SCR without help of gate current.
• In practice it is not suitable to apply high dv/dt due to high
temperature malfunction of SCR.
Current Rating of SCR
We all know that a thyristor, hence a SCR is made of semiconductor which is very much thermal sensitive. Even
due to short time over current, the temperature of the device may rise to such a high value that it may cross its
maximum allowable limit. Hence there will be a high chance of permanent destruction of the device. 

• Maximum RMS Current Rating (IRMS)

Generations of heat in the device present where resistive elements are
present in the device.
• Resistive elements such as metallic joints are totally dependent upon
rms current as power loss is IRMS2R, which is converts to heat, hence
cause of temperature rise of the device. Hence, IRMS rating of the 
thyristor must be a suitable value so that maximum heat capability
of SCR cannot exceed.
• Maximum Average Current Rating (IAV)
It is the allowable average current that can be applied safely such that
maximum junction temperature and rms current limit cannot be
exceeded. Generally manufacturer of SCR, provides a characteristic
diagram which shows IAV as a function of the case temperature IC with
the current conduction angle φ as a parameter. This characteristic is
• Maximum Surge Current (ISM)
If a thyristor operates under its repetitive voltage and current
ratings, its maximum allowable temperature is never exceeded.
• But a SCR may fall into a abnormal operating condition due to
fault in the circuit. To overcome this problem, a maximum
allowable surge current rating is also specified by manufacturer.
• This rating specifies maximum non repetitive surge current,
that the device can withstand. This rating is specified
dependent upon the number of surge cycle. At the time of
manufacturing at least three different surge current ratings for
different durations are specified. For example,
ISM = 3,000A for 1/2 cycle
ISM = 2,100A for 3 cycles
ISM = 1,800A for 5 cycles
A plot between ISM and cycle numbers are also provided for
dealing with the various cycle surge current.
• di/dt Rating of SCR
 While, SCR is getting turn on, conduction stays in a very small area nearer
to the gate.
 This small area of conduction spreads throughout the whole area of the
junctions.
 But if spreading velocity of the charge carriers will be smaller than the
di/dt then local hot spot may arise nearer to the gate which may destroy
the device.
 To overcome this problem a maximum rate of rise of current, di/dt is also
specified during manufacturing of the devices.
• Latching Current of Thyristor
This is the rating of current below which the SCR can't be turned on even the
gate signal is applied.
That means this much anode current must rise to turn on the device. The
gate pulse must be continuous until anode current is greater or equal to
latching current of thyristor other wise the device will fail to be turned on.
• Holding Current of Thyristor
This is the rating of current below, which anode current must fall to turn off
the device.
 Gate Specification of SCR
• Gate Current to Trigger (IGT)/Igmin)
• This is the value of gate current below which device cannot be turned on. This
value of current specified at a particular forward break down voltage.
• Gate Triggering Voltage (VGT)/Vgmin
• This is the value of minimum gate voltage that must be a acquired by the gate
circuit. for proper turn on of the SCR. This voltage value is also specified at a
particular forward breakdown voltage similar to IGT.
• Non Triggering Gate Voltage (VNG)
• This is the maximum value of gate circuit source voltage below which the device
must be in off state. All unwanted noise signals must lie under this voltage to avoid
unwanted turn on of the device.
• Peak Reverse Gate Voltage (VGRM)
• This is the value of maximum reverse voltage which can be applied across the
cathode and gate.(since J3 has a low breakover voltage)
• Average Gate Power Dissipation (PGAR)
• This is the value of average power dissipation which cannot be exceeded by a gate
circuit for a gate current pulse wider than 100 microsecond.
• Peak Forwarded Gate Current (IGRM)
• This is the rating of maximum forward gate current that should not be exceeded