0% found this document useful (0 votes)
188 views

Lecture 3

This document provides an overview of Lecture 3 which covers the bipolar junction transistor (BJT). It discusses the structure, principles of operation, configurations, characteristic curves, and DC biasing of the BJT. The key topics covered include the NPN and PNP transistor structure, majority carrier flow, common base, common emitter, and common collector configurations, input and output characteristic curves, and biasing circuits like fixed, emitter stabilized, and voltage divider bias. Equations relating important transistor parameters like alpha, beta, input and output currents are also presented.

Uploaded by

David Kaaya
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
188 views

Lecture 3

This document provides an overview of Lecture 3 which covers the bipolar junction transistor (BJT). It discusses the structure, principles of operation, configurations, characteristic curves, and DC biasing of the BJT. The key topics covered include the NPN and PNP transistor structure, majority carrier flow, common base, common emitter, and common collector configurations, input and output characteristic curves, and biasing circuits like fixed, emitter stabilized, and voltage divider bias. Equations relating important transistor parameters like alpha, beta, input and output currents are also presented.

Uploaded by

David Kaaya
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 20

ETU 07103

LECTURE 3

Lecture 3 Electronic Devices 1


Lecture 3
 Coverage
• Bipolar Junction Transistor (BJT)
 Structure and principals of operation
 BJT configurations
 BJT characteristic curves
 BJT DC biasing
 Analysis under various biasing conditions

 References
• Electronic devices and circuit theory, 7th Ed. by Robert
L. Boylestad & Louis Nashelsky, pg. 112 to 166,
• Electronic devices and circuits, by Theodore F.
Bogart, Jr., page 85 to 120

Lecture 3 Electronic Devices 2


Bipolar Junction Transistor (BJT)
 Introduction
• BJT is a three layers semiconductor device with either
NPN or PNP structure
• BJT has three terminals described as follow
 Base – the control terminal
 Emitter – the source of majority carriers
 Collector – the collector of majority carriers
• Applications include the use as amplifier and switch
• There are two types of BJT namely as
 PNP transistor
 NPN transistor
• BJT is a current controlled device
Lecture 3 Electronic Devices 3
BJT continue…
 Structure

Figure 3.1 Structure and schematic symbols of NPN and PNP transistors

Lecture 3 Electronic Devices 4


BJT continue…
 Mode of operation

• The basic operation of BJT will be described using the


PNP transistor of Fig. 3.2

• For linear operation


 The base-emitter junction is always forward biased, while
 The base-collector junction is always reversed biased

• A small base-emitter current controls a much large


collector-emitter current

Lecture 3 Electronic Devices 5


BJT continue…

Figure 3.2 Majority and minority carriers flow of a PNP transistor

Lecture 3 Electronic Devices 6


BJT continue...
From Fig. 3.2
• Base-Emitter junction (Forward biased)
 (1) Holes diffusing from E into the B
 (2) Electrons diffusing from the B into the E
• At the Base region
 (3) Recombination of holes injected into the base
 (4) Most holes reach the C
• Base-Collector junction (Reverse biased)
 (5) Electron minority carrier current from C to B
 (6) Hole minority carrier current from B to C
• In most practical purposes, current (5) and (6) can
be neglected

Lecture 3 Electronic Devices 7


BJT continue…
• For both NPN and PNP transistors
IE = IB + IC ……………………………………….......................(3.1)
• The IC is comprised of two components, the majority
and minority carriers as indicated in Fig. 3.2
• The minority current component is called the leakage
current (ICO)
• The IC, therefore is determined in total by Eqn. 3.2
IC = ICmajority + ICOminority ……………………………………………(3.2)
• Alpha is an important transistor parameter defined as
α = ICmajority/IE = IC/IE ……………………………………............(3.3)
• α measures the portion of the IE that managed to
cross the base and become IC (0.90 < α < 1)
Lecture 3 Electronic Devices 8
BJT Configurations
 Introduction
• A transistor can be connected in three configurations
 Common Base Configuration (CB)
 Common Emitter Configuration (CE)
 Common Collector Configuration (CC)

 Common base configuration


• The base terminal is common to both input and output
as shown in Fig. 3.3
• IC and IE are related by Eqn. 3.3 (i.e. α = IC/IE )

Lecture 3 Electronic Devices 9


BJT config. Continue…

Figure 3.3 Common base configuration


 Common emitter configuration
• The emitter terminal is common to both input and
output terminals as shown in Fig. 3.4
• The IC is related to the IB by a factor known as beta (β)
as shown in Eqn. 3.4
β = IC/IB……………………………………………..(3.4)

Lecture 3 Electronic Devices 10


BJT config. Continue…
• β is known as common-emitter, forward-current,
amplification factor

Figure 3.4 Common emitter configuration

 Common collector configuration


• Collector terminal is common to both input and output
as shown in Fig. 3.5
• Eqn. 3.5 shows on how IB and IE relates in CC
IE/IB = β / α ……………………………………………………..(3.5)
Lecture 3 Electronic Devices 11
BJT config. Continue…

Figure 3.5 Common collector configuration


 BJT Characteristic curve
• The behavior of BJT can be described using two sets
of characteristic curves namely
 Input characteristics: To show the relation between input I
and V
 Output characteristics: To show the relation between output I
and V
Lecture 3 Electronic Devices 12
BJT char. curve continue…
Consider the CB configuration
• Input characteristics
 They are shown in Fig. 3.6a
 They relate an input IE to an input VBE for various
levels of output VCB
• Output characteristics
 The characteristics are as shown in Fig. 3.6b
 They relate an output IC to an output VCB for
various levels of input IE

Lecture 3 Electronic Devices 13


BJT char. curve continue…

(a) (b)
Figure 3.6 (a) Input characteristics for CB amplifier; (b) Output
characteristics for CB amplifier
Lecture 3 Electronic Devices 14
BJT DC Biasing
 Introduction
• BJT is used for different purposes like amplifier,
oscillator, etc.
• BJT must be DC biased for the most purposes
• DC biasing is that process of introducing a fixed level
of IDC and VDC at the output circuit of BJT
• For transistor amplifiers, IDC and VDC establish an
operating point (Q- point) on the characteristic curve
• Q-point define the region to be used for amplification
of input signal

Lecture 3 Electronic Devices 15


BJT DC bias continue…
 Biasing Circuits (CE)
• Most commonly used biasing circuits are
 Collector to base bias circuit
 Fixed bias circuit
 Emitter stabilized bias circuit
 Voltage divider bias circuit
• Fixed Bias Circuit
 Fig. 3.7 shows the fixed bias circuit
 Applying KVL to the input loop
VCC - IBRB - VBE = 0 ………………………………………(3.6)
 Applying KVL to the collector-emitter loop
VCE + ICRC – VCC = 0 …………………………………(3.7)

Lecture 3 Electronic Devices 16


BJT DC bias continue…

Figure 3.7 Fixed Bias Circuit Figure 3.8 Emitter stabilized bias circuit

• Emitter stabilized bias circuit


 It is a modified version of a fixed bias circuit as shown in Fig.
3.8
 Consider base-emitter loop
IB(RB + ( β +1)RE) = VCC – VBE ………………………(3.8)

Lecture 3 Electronic Devices 17


BJT DC bias continue…
 Consider collector-emitter loop
VCE – VCC + IC(RC + RE) = 0 ………………………(3.9)
• Voltage divider bias circuit
 The name voltage divider comes from voltage divider formed
by the resistor R1 and R2 in Fig. 3.9

Figure 3.9 Voltage divider bias circuit

Lecture 3 Electronic Devices 18


BJT DC bias continue…
Consider the input side of Fig. 3.9

The output side of Fig. 3.9 will make use of an


Eqn. 3.9

Lecture 3 Electronic Devices 19


THE END OF LECTURE 3

Lecture 3 Electronic Devices 20

You might also like