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Slides Boylestad - Ch. 7

The document discusses two common transistor models: the re model and the hybrid equivalent model. The re model uses a diode and current source to approximate transistor behavior, while the hybrid model uses h-parameters (hie, hre, hfe, hoe) derived from the transistor specifications. Key parameters like input impedance (Zi), output impedance (Zo), voltage gain (Av), and current gain (Ai) are defined. Formulas are provided for calculating these parameters for common transistor configurations like common-emitter, common-base, and common-collector using both the re model and hybrid model.

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José Mattos
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0% found this document useful (0 votes)
244 views25 pages

Slides Boylestad - Ch. 7

The document discusses two common transistor models: the re model and the hybrid equivalent model. The re model uses a diode and current source to approximate transistor behavior, while the hybrid model uses h-parameters (hie, hre, hfe, hoe) derived from the transistor specifications. Key parameters like input impedance (Zi), output impedance (Zo), voltage gain (Av), and current gain (Ai) are defined. Formulas are provided for calculating these parameters for common transistor configurations like common-emitter, common-base, and common-collector using both the re model and hybrid model.

Uploaded by

José Mattos
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Slide 1 Transistor Modeling

A model is an equivalent circuit that represents the AC characteristics of the transistor.


It uses circuit elements that approximate the behavior of the transistor.

There are 2 models commonly used in small signal AC analysis of a transistor:

• re model
• hybrid equivalent model

Ω
Slide 2 Important Parameters
Zi, Zo, Av, Ai are important parameters for the analysis of the Ac characteristics of a
transistor circuit.
Slide 3 Input Impedance, Zi
[Formula 7.1]

To determine Ii: insert a “sensing resistor”

Vi
Zi 
Ii

Vs  Vi
then calculate Ii: Ii  [Formula 7.2]
Rsense
Slide 4 Output Impedance, Zo
[Formula 7.5]

To determine Io: insert a “sensing resistor”

799
Vo
Zo 
Io

V  Vo
Io 
then calculate Io: Rsense [Formula 7.4]
Slide 5 Voltage Gain, Av
[Formula 7.6]

For an amplifier with no load:


Vo
Av 
Vi
[Formula 7.7]
Vo
AVNL 
Vi RL  (opencircuit)

Note: the no-load voltage gain (AVNL) is always greater


than the loaded voltage gain (AV).
Slide 6 Current Gain, Ai
[Formula 7.9]
Io
Ai 
Ii

The current gain (Ai) also be calculated using the voltage gain (Av):
Zi
Ai   Av [Formula 7.10]
RL
Slide 7 Phase Relationship

The phase relationship between input and output depends on the amplifier
configuration circuit.

Common – Emitter ~ 180 degrees

Common - Base ~ 0 degrees

Common – Collector ~ 0 degrees


Slide 8 re Transistor Model

BJTs are basically current controlled devices, therefore the re model uses a diode and a
current source to duplicate the behavior of the transistor.

One disadvantage to this model is its sensitivity to the DC level. This model is designed
for specific circuit conditions.
Slide 9 Common – Base Configuration
Using a PNP transistor the Common-Base configuration and the re model:

The emitter is the input and the collector is the output.


This model indicates: Ic = Ie
Slide 10 re

26mV
re  [Formula 7.11]
IE

where IE is the DC current.


Slide 11 Common-Base re Model

The diode in the previously shown re model can be replaced by the resistor re.
Slide 12 Impedance in Common-Base Configuration

The re model indicates:

The input impedance (Zi) is quite small:

Zi  re [Formula 7.12]

The output impedance (Zo) is quite large:

Zo   [Formula 7.13]
Slide 13 Gain calculations for the Common-Base
using the re model

Voltage Gain:
RL R L
Av   [Formula 7.14]
re re
Current Gain:

Ai    1 [Formula 7.15]

The phase relationship between input and output is 0 degrees.


Slide 14 NPN Common-Base Configuration

The npn transistor will use the same calculation. The only difference is that the voltage
polarities and current directions will be the opposite.
Slide 15 Common-Emitter Configuration

The base current is the input and the collector is the output.
This model indicates:
Ic  Ib [Formula 7.16]

Ie  ( 1) Ib [Formula 7.17]

Ie  Ib [Formula 7.18]


Slide 16 Impedance in Common-Emitter Configuration

The input impedance (Zi):

Zi  re [Formula 7.19]

The output impedance (Zo):

Zo  ro [Formula 7.20]
Zo  
Slide 17 Gain calculations for the Common-Emitter
using the re model

RL
Av  
Voltage Gain (Av): re [Formula 7.21]

Current Gain (Ai): Ai   [Formula 7.22]


ro  
Slide 18 Common-Collector Configuration

The Common-Emitter Model is used for Common-Collector.


Slide 19 Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the transistor.
These parameters can be found in a specification sheet for a transistor.
Slide 20 General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
Slide 21 Simplified General h-Parameter Model
The above model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho  


Slide 22 Common-Emitter re vs. h-Parameter Model

hie = re
hfe = 
hoe = 1/ro
Slide 23 Common-Emitter h-Parameters

hie  re [Formula 7.28]

h fe   ac [Formula 7.29]
Slide 24 Common-Base re vs. h-Parameter Model

hib = re
hfb = -
Slide 25 Common-Base h-Parameters

hib  re [Formula 7.30]

h fb    1 [Formula 7.31]

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