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Mosfet Scaling

MOS transistor scaling involves systematically reducing the overall dimensions of devices using a scaling factor S, while preserving geometric ratios, and there are two types of scaling: constant field scaling aims to preserve internal electric fields while constant voltage scaling keeps terminal voltages unchanged but requires increasing doping densities by a factor of S^2 to maintain charge-field relations, with each approach having different advantages and disadvantages for device characteristics and reliability.

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5K views

Mosfet Scaling

MOS transistor scaling involves systematically reducing the overall dimensions of devices using a scaling factor S, while preserving geometric ratios, and there are two types of scaling: constant field scaling aims to preserve internal electric fields while constant voltage scaling keeps terminal voltages unchanged but requires increasing doping densities by a factor of S^2 to maintain charge-field relations, with each approach having different advantages and disadvantages for device characteristics and reliability.

Uploaded by

Rakesh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Mosfet Scaling

Deepa
Asst.Professor
SIT,Tumakuru
Scaling definition and types
• High integration of MOSFETs on IC, requires reduction
of size of MOSFET. Reducing the size of MOSFET is
called as scaling.
• Scaling of MOS transistors is concerned with systematic
reduction of overall dimensions of the devices as
allowed by the available technology, while preserving
the geometric ratios found in the larger devices

• There are two types of scaling


 Constant field scaling/full scaling
 Constant voltage scaling
Scaling factor
• constant scaling factor S > 1.
• All horizontal and vertical dimensions of the large-size
transistor are then divided by this scaling factor to obtain
the scaled device.
• W, L, tox are decreased by S, while ND,NA doping
concentrations are increased by S.
Constant Field Scaling/voltage scaling
• This scaling option attempts to preserve the
magnitude of internal electric fields in the
MOSFET, while the dimensions are scaled
down by a factor of S.
• the Poisson equation describing the
relationship between charge densities and
electric fields dictates that the charge
densities must be increased by a factor of S in
order to maintain the field conditions.
Constant Field Scaling/voltage scaling
Constant Field Scaling/Full scaling
• The gate oxide capacitance per unit area, on
the other hand, is changed as follows.
Constant Field Scaling/Full scaling
• The aspect ratio WIL of the MOSFET will remain unchanged
under scaling. Consequently, the transconductance parameter
kn will also be scaled by a factor of S. Since all terminal
voltages are scaled down by the factor S as well, the linear-
mode drain current of the scaled MOSFET can now be found
as:
Constant Field Scaling/Full scaling
• Now consider the power dissipation of the MOSFET. Since the
drain current flows between the source and the drain
terminals, the instantaneous power dissipated by the device
(before scaling) can be found as:

Notice that full scaling reduces both the drain current and the
drain-to-source voltage by a factor of S; hence, the power
dissipation of the transistor will be reduced by the factor S*S .
Advantages Constant Field Scaling
• consider the gate oxide capacitance defined as Cg = WL COX,
Since the gate oxide capacitance C is scaled down by a factor
of S, we can predict that the transient characteristics, i.e., the
charge-up and charge-down times, of the scaled device will
improve accordingly
• the proportional reduction of all dimensions on-chip will lead
to a reduction of various parasitic capacitances and
resistances as well, contributing to the overall performance
improvement.
Disadvantages Constant Field Scaling
• While the full scaling strategy dictates that the power supply
voltage and all terminal voltages be scaled down
proportionally with the device dimensions, the scaling of
voltages may not be very practical in many cases. In particular,
the peripheral and interface circuitry may require certain
voltage levels for all input and output voltages, which in turn
would necessitate multiple power supply voltages and
complicated level shifter arrangements. For these reasons,
constant-voltage scaling is usually preferred over full scaling.
Constant Voltage scaling
• In constant-voltage scaling, all dimensions of
the MOSFET are reduced by a factor of S, as in
full scaling.
• The power supply voltage and the terminal
voltages, on the other hand, remain
unchanged.
• The doping densities must be increased by a
factor of s*s in order to preserve the charge-
field relations.
Constant Voltage scaling
Constant Voltage scaling
Under constant-voltage scaling, the changes indevice
characteristics are significantly different compared to
those in full scaling, as wewill demonstrate. The gate
oxide capacitance per unit area Cox is increased by a
factor ofS, which means that the transconductance
parameter is also increased by S. Since theterminal
voltages remain unchanged, the linear mode drain
current of the scaledMOSFET can be written as:
Constant Voltage scaling
• Also, the saturation-mode drain current will be
increased by a factor of S after constant voltage
scaling. This means that the drain current density
(current per unit area) is increased bya factor of
S3, which may cause serious reliability problems
for the MOS transistor.
Constant Voltage scaling
consider the power dissipation. Since the drain
current is increased by a factor of S while the
drain-to-source voltage remains unchanged,
the power dissipation of the MOSFET
increases by a factor of S.
Constant Voltage scaling
Finally, the power density (power dissipation per unit
area) is found to increase by a factor of S3 after
constant-voltage scaling, with possible adverse
effects on device reliability.
Advantages and Disadvantages of
Constant Voltage scaling
• Adv: constant-voltage scaling may be preferred over
full (constant-field)scaling in many practical cases
because of the external voltage-level constraints.
• Disadv:It must be recognized, however, that constant-
voltage scaling increases the drain current density
and the power density by a factor of S*S*S. This large
increase in current and power densities may eventually
cause serious reliability problems for the scaled
transistor, such as electromigration, hot-carrier
degradation, oxide breakdown, and electrical over-
stress
Reference
• Sung Mo Kang &YosufLeblebici, “CMOS Digital
Integrated Circuits: Analysis and Design”, Tata
McGraw-Hill, Third Edition.

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