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Submitted By-Submitted To - Darshana Paliwal (1656) Dr. Shiv Om Meena Prachi Mahar

This document describes the operation and characteristics of a charge amplifier used to measure signals from semiconductor radiation detectors. 1) Charge amplifiers are used to amplify weak charge pulses from detectors into voltage pulses. They integrate the charge using a feedback capacitor and convert it to a voltage output. 2) Key characteristics of charge amplifiers include high gain, low noise, excellent integration linearity, fast rise time, and temperature stability. 3) Noise in charge amplifiers comes from three main sources - thermal noise from the first stage FET, shot noise from gate currents and detector dark currents, and thermal noise from the feedback resistor. Total noise is calculated from these components.

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95 views11 pages

Submitted By-Submitted To - Darshana Paliwal (1656) Dr. Shiv Om Meena Prachi Mahar

This document describes the operation and characteristics of a charge amplifier used to measure signals from semiconductor radiation detectors. 1) Charge amplifiers are used to amplify weak charge pulses from detectors into voltage pulses. They integrate the charge using a feedback capacitor and convert it to a voltage output. 2) Key characteristics of charge amplifiers include high gain, low noise, excellent integration linearity, fast rise time, and temperature stability. 3) Noise in charge amplifiers comes from three main sources - thermal noise from the first stage FET, shot noise from gate currents and detector dark currents, and thermal noise from the feedback resistor. Total noise is calculated from these components.

Uploaded by

DARSHANA PALIWAL
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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Submitted by- Submitted to-

Darshana Paliwal(1656) Dr. Shiv Om Meena


Prachi Mahar(16)
GENERAL DESCRIPTION
 When semiconductor detector like Si is used for
measurement of soft x-rays and low to high energy
gamma rays, output signal is weak charge pulse .
 It has a pulse of width of several tens of
nanoseconds.
 As the detector element is itself a capacitive having
high impedance, therefore performance of
preamplifier must taken in consideration.
 In such application , operational amplifier using
feedback capacitance are commonly used.
 Due to high impedance , they integrate weak
charge pulse and convert them into voltage pulses
for amplification then provide low input
impedance output.
 This type of amplifier is called “charge amplifier”.
 First stage of charge amplifier is usually a low noise
FET and its open loop gain is set so high that
amplification is not influenced by detector
capacitance.
Principle of operation
 When soft X-rays or gamma rays
strike for example Si
semiconductor detector , signal
charge pulse Qs are generated,
with an amplitude acc. to particle
energy.
 The signal charge pulses Qs are
integrated to feedback
capacitance Cf and then output as
voltage pulses eout(t).
 At this point , since feedback
resistance Rf for direct current is
connected in parallel to the
feedback capacitance Cf , the
output becomes voltage pulse that
slowly charge with the time
constant determined by Cf*Rf.
Characteristic
 In general,following of the characteristic of charge
amplifier is required for detection of the soft x-rays
and low to high gamma rays.
1. High gain
2. Low noise
3. Excellent integration linearity
4. High speed-rise time
5. High temperature stability
Noise
 Figure shows noise equivalent circuit of charge amplifier.
Noise in the circuit comes from three major sources-
1. Thermal noise of first stage FET
it is given by (en1)-

K=Boltzmann constant
T=temperature
Gm=mutual conductance of fisrt stage FET
2. Shot noise caused by gate current of first stage FET and dark current of
detector.
it is given by-
q= elementary charge
IG= gate leaked current of first stage FET
ID=dark current of FET
3.Thermal noise due to feedback resistance:-
Thermal noise(en2) due to feedback resistance Rf is-

From the above three equation , total noise is given by-

 In the above equation , first component is constant over the


entire range of frequency.
 It is amplified by the noise gain(1+Cin/Cf) which is
determined by input capacitance Cf.
 The second term is constant regardless of capacitance Cin
but decrease with incresing frequency.
Noise spectrum:-

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