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Diesel Locomotive Works, Varansi Made by Suryakant Mishra Shubham Maurya Nishant Nain Arun Meena

This document provides an overview of semiconductor materials and properties. It defines semiconductors as having intermediate resistivity between conductors and insulators. Silicon is discussed as the most common semiconductor material. Silicon can be doped with other elements like phosphorus or boron to create an excess or deficiency of electrons or holes, making the material an N-type or P-type semiconductor. The document outlines key semiconductor concepts like intrinsic and extrinsic carriers, band diagrams, mobility, diffusion and drift current. Generation and recombination of electron-hole pairs via various mechanisms is also summarized.

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Suryakant Mishra
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34 views

Diesel Locomotive Works, Varansi Made by Suryakant Mishra Shubham Maurya Nishant Nain Arun Meena

This document provides an overview of semiconductor materials and properties. It defines semiconductors as having intermediate resistivity between conductors and insulators. Silicon is discussed as the most common semiconductor material. Silicon can be doped with other elements like phosphorus or boron to create an excess or deficiency of electrons or holes, making the material an N-type or P-type semiconductor. The document outlines key semiconductor concepts like intrinsic and extrinsic carriers, band diagrams, mobility, diffusion and drift current. Generation and recombination of electron-hole pairs via various mechanisms is also summarized.

Uploaded by

Suryakant Mishra
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Lecture 1

Diesel Locomotive Works,Varansi


Made By
Suryakant Mishra
Shubham Maurya
Nishant Nain
Arun Meena

What is a Semiconductor?
Low resistivity => conductor
High resistivity => insulator
Intermediate resistivity =>
semiconductor
conductivity lies between that of conductors
and insulators
generally crystalline in structure for IC devices
In recent years, however, non-crystalline
semiconductors have become commercially very
important

polycrystalline amorphous crystalline

Silicon
Atomic density: 5 x 1022 atoms/cm3
Si has four valence electrons. Therefore, it
can form covalent bonds with four of its
nearest neighbors.
When temperature goes up, electrons can
become free to move about the Si lattice.

Electronic Properties of Si

Silicon is a semiconductor material.


Pure Si has a relatively high electrical resistivity at room temperature.

There are 2 types of mobile charge-carriers in Si:


Conduction electrons are negatively charged;
Holes are positively charged.

The concentration (#/cm3) of conduction electrons &


holes in a semiconductor can be modulated in
several ways:
1.
2.
3.
4.

by adding special impurity atoms ( dopants )


by applying an electric field
by changing the temperature
by irradiation

Semiconductor Basics
Thermal Equilibrium electron concentration in
intrinsic semiconductor is dependent on
temperature ,more temperature more electrons
move from valence band to conduction band.
The band-gap energy Eg is the amount of energy
needed to remove an electron from a covalent bond.
As band gap reduces more electrons can move to
conduction band generating more electron hole pair.

Doping (N type)
Si can be doped with other elements to
change its electrical properties.
For example, if Si is doped with
phosphorus (P), each P atom can
contribute a conduction electron, so that
Notation:than
the Si lattice has more electrons
n = conduction electron
holes, i.e. it becomes N type:
concentration

Doping (P type)
If Si is doped with Boron (B), each B atom
can contribute a hole, so that the Si lattice
has more holes than electrons, i.e. it
Notation:
becomes P type:
p = hole concentration

Summary of Charge Carriers

Terminology
donor: impurity atom that increases n
acceptor: impurity atom that increases p
N-type material: contains more electrons than
holes
P-type material: contains more holes than
electrons
majority carrier: the most abundant carrier
minority carrier: the least abundant carrier
intrinsic semiconductor: n = p = ni
extrinsic semiconductor: doped
semiconductor

Band Energy diagram of n type and p type


Semiconductor
For p type

For n type

In terms of intrinsic carrier concentration


thermal equilibrium electron and hole
concentration

Equation
always holds for a
semiconductor.
In thermal equilibrium semiconductor

For an extrinsic semiconductor


N-type material
material
n = Nd
p=ni2 /n

P-type
p=N a
n=n i2 /p

There are two components of current drift


and diffusion current.
Drift current
Mobility is a function of temperature and
doping concentration.

Mobility effects
Phonon Scattering : It is scattering of
electrons by colliding with atoms as
temperature increases scattering
increases so mobility decreases.
Impurity Scattering: As temperature
increases then time spent by electrons
around charged particle decreases which
reduces Scattering.

Diffusion : like in fluid ,flow from region of


higher concentration to a region of lower
concentration.

Diffusion
Current
Density:
proportional to charge gradient.

Dn is electron diffusion coefficient


Total current density

It

is

The Einstein Relation :


Semiconductor in equilibrium : In
equilibrium rate of electron hole pair
generated and recombination rate is
same.

Excess electron hole pair generation:


It occurs in three ways : Photo

Photo generation: Light of energy


greater than
band gap energy excites
electron and create excess charge.
Phonon Generation: With rise in
temperature lattice vibrates increases,
covalent bond breaks and electron hole
pair is generated.
Impact ionization: Under electric field
charge particles gets accelerated and
collides and create electron hole pair.
Recombination may occur in three
ways: Radiative ,Schockley-Read-Hall and
Auger Recombination.

Radiative Recombination: Occurs in


direct semiconductor like GaAs. Electrons
from conduction band falls into valence
band by radiating energy.
Schockley-Read-Hall Recombination:
Occurs in impure semiconductor when
there is level between valence and
conduction band ,so recombination can
occur by moving from conduction to
impurity level to valence band.
Auger Recombination: It occurs in highly
doped material .It involves three particles
, an electron hole pair combine instead of

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