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Chapter 5 - Internal Memory

This document summarizes different types of semiconductor memory, including RAM, ROM, and their variants. It discusses the key characteristics of dynamic RAM (DRAM) and static RAM (SRAM) such as volatility, memory cell operation, structure, speed, and use. The document also covers read-only memory types, DRAM organization techniques like interleaving and error correction, and advanced DRAM types including synchronous DRAM, double data rate SDRAM, and cache DRAM.

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298 views

Chapter 5 - Internal Memory

This document summarizes different types of semiconductor memory, including RAM, ROM, and their variants. It discusses the key characteristics of dynamic RAM (DRAM) and static RAM (SRAM) such as volatility, memory cell operation, structure, speed, and use. The document also covers read-only memory types, DRAM organization techniques like interleaving and error correction, and advanced DRAM types including synchronous DRAM, double data rate SDRAM, and cache DRAM.

Uploaded by

HPManchester
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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William Stallings

Computer Organization
and Architecture
8th Edition
Chapter 5
Internal Memory
Semiconductor Memory Types
Memory Type Category Erasure Write Mechanism Volatility
Random-access
memory (RAM)
Read-write memory Electrically, byte-level Electrically Volatile
Read-only
memory (ROM)
Read-only memory Not possible
Masks
Nonvolatile
Programmable
ROM (PROM)
Electrically
Erasable PROM
(EPROM)
Read-mostly memory
UV light, chip-level
Electrically Erasable
PROM (EEPROM)
Electrically, byte-level
Flash memory Electrically, block-level
Semiconductor Memory
RAM
Misnamed as all semiconductor memory is
random access
Read/Write
Volatile
Temporary storage
Static or dynamic
Memory Cell Operation
Dynamic RAM
Bits stored as charge in capacitors
Charges leak
Need refreshing even when powered
Simpler construction
Smaller per bit
Less expensive
Need refresh circuits
Slower
Main memory
Essentially analogue
Level of charge determines value
Dynamic RAM Structure
DRAM Operation
Address line active when bit read or written
Transistor switch closed (current flows)
Write
Voltage to bit line
High for 1 low for 0
Then signal address line
Transfers charge to capacitor
Read
Address line selected
transistor turns on
Charge from capacitor fed via bit line to sense amplifier
Compares with reference value to determine 0 or 1
Capacitor charge must be restored
Static RAM
Bits stored as on/off switches
No charges to leak
No refreshing needed when powered
More complex construction
Larger per bit
More expensive
Does not need refresh circuits
Faster
Cache
Digital
Uses flip-flops
Stating RAM Structure
Static RAM Operation
Transistor arrangement gives stable logic
state
State 1
C
1
high, C
2
low
T
1
T
4
off, T
2
T
3
on
State 0
C
2
high, C
1
low
T
2
T
3
off, T
1
T
4
on
Address line transistors T
5
T
6
is switch
Write apply value to B & compliment to
B
Read value is on line B

SRAM v DRAM
Both volatile
Power needed to preserve data
Dynamic cell
Simpler to build, smaller
More dense
Less expensive
Needs refresh
Larger memory units
Static
Faster
Cache

Read Only Memory (ROM)
Permanent storage
Nonvolatile
Microprogramming (see later)
Library subroutines
Systems programs (BIOS)
Function tables

Types of ROM
Written during manufacture
Very expensive for small runs
Programmable (once)
PROM
Needs special equipment to program
Read mostly
Erasable Programmable (EPROM)
Erased by UV
Electrically Erasable (EEPROM)
Takes much longer to write than read
Flash memory
Erase whole memory electrically
Organisation in detail
A 16Mbit chip can be organised as 1M of
16 bit words
A bit per chip system has 16 lots of 1Mbit
chip with bit 1 of each word in chip 1 and
so on
A 16Mbit chip can be organised as a 2048
x 2048 x 4bit array
Reduces number of address pins
Multiplex row address and column address
11 pins to address (2
11
=2048)
Adding one more pin doubles range of values so x4
capacity
Refreshing
Refresh circuit included on chip
Disable chip
Count through rows
Read & Write back
Takes time
Slows down apparent performance
Typical 16 Mb DRAM (4M x 4)
Packaging
256kByte Module
Organisation
1MByte Module Organisation
Interleaved Memory
Collection of DRAM chips
Grouped into memory bank
Banks independently service read or write
requests
K banks can service k requests
simultaneously
Error Correction
Hard Failure
Permanent defect
Soft Error
Random, non-destructive
No permanent damage to memory
Detected using Hamming error correcting
code
Error Correcting Code Function
Advanced DRAM Organization
Basic DRAM same since first RAM chips
Enhanced DRAM
Contains small SRAM as well
SRAM holds last line read (c.f. Cache!)
Cache DRAM
Larger SRAM component
Use as cache or serial buffer

Synchronous DRAM (SDRAM)
Access is synchronized with an external clock
Address is presented to RAM
RAM finds data (CPU waits in conventional
DRAM)
Since SDRAM moves data in time with system
clock, CPU knows when data will be ready
CPU does not have to wait, it can do something
else
Burst mode allows SDRAM to set up stream of
data and fire it out in block
DDR-SDRAM sends data twice per clock cycle
(leading & trailing edge)
SDRAM
SDRAM Read Timing
RAMBUS
Adopted by Intel for Pentium & Itanium
Main competitor to SDRAM
Vertical package all pins on one side
Data exchange over 28 wires < cm long
Bus addresses up to 320 RDRAM chips at
1.6Gbps
Asynchronous block protocol
480ns access time
Then 1.6 Gbps
RAMBUS Diagram
DDR SDRAM
SDRAM can only send data once per clock
Double-data-rate SDRAM can send data
twice per clock cycle
Rising edge and falling edge

DDR SDRAM
Read Timing
Simplified DRAM Read Timing
Cache DRAM
Mitsubishi
Integrates small SRAM cache (16 kb) onto
generic DRAM chip
Used as true cache
64-bit lines
Effective for ordinary random access
To support serial access of block of data
E.g. refresh bit-mapped screen
CDRAM can prefetch data from DRAM into SRAM
buffer
Subsequent accesses solely to SRAM
Reading
The RAM Guide
RDRAM

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