Power Electronics

Prof. Shete Omkar M.

SRCOE, Pune
Department of Electrical Engineering
University of Pune
1
2
Thyristors
Most important type of power
semiconductor device.
Have the highest power handling
capability.they have a rating of 5000V /
6000A with switching frequencies ranging
from 1KHz to 20KHz.
3
Is inherently a slow switching device
compared to BJT or MOSFET.
Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.
4
SCR


Symbol of
Silicon Controlled Rectifier
5
Structure
}
}
}
}
Gate Cathode
J
3
J
2
J
1
Anode
10 cm
17 -3
10 -5 x 10 cm
13 14 -3
10 cm
17 -3
10 cm
19 -3
10 cm
19 -3
10 cm
19 -3
n
+
n
+
p
-
n

p
p
+
10 m
30-100 m
50-1000 m
30-50 m
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Device Operation



Simplified model of a
thyristor
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Two Transistor Model of SCR



8
9
( )
( )
The general transistor equations are,
1
1
C B CBO
C E CBO
E C B
B E CBO
I I I
I I I
I I I
I I I
| |
o
o
= + +
= +
= +
=
10
( ) ( )
1 1
1 1
1 1
1
1
Considering PNP transistor
of the equivalent circuit,
, , ,
,
1 1
E A C C
CBO CBO B B
B A CBO
I I I I
I I I I
I I I
o o
o
= = =
= =
=
11
( ) ( )
2 2 2
2 2
2 2
2
2
Considering NPN transistor
of the equivalent circuit,
, ,
2
C C B B E K A G
C k CBO
C A G CBO
I I I I I I I I
I I I
I I I I
o
o
= = = = +
= +
= + +
12
( )
2 1
2 1 2
1 2
From the equivalent circuit,
we see that
1
C B
g CBO CBO
A
I I
I I I
I
o
o o
=
+ +
=
+
13
( )
1 2
1 2
Case 1: When 0
1
g
CBO CBO
A
I
I I
I
o o
=
+
=
+
( )
2 1 2
1 2
Case 2: When 0
1
G
g CBO CBO
A
I
I I I
I
o
o o
=
+ +
=
+
14
V-I
Characteristics
15
Effects of gate current
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Turn-on
Characteristics
on d r
t t t = +
17
Turn-off
Characteristic
s
Anode current
begins to
decrease
t
C
t
q
t
t
Commutation
di
dt
Recovery Recombination
t
1
t
2
t
3
t
4
t
5
t
rr
t
gr
t
q
t
c
V
AK
I
A
t
q
=device off time
t
c
=circuit off time
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dv/dt
Triggering
( )
2
2 2
2
2 2
2
2
j
j j j
j dV
j
j
dq d
i C V
dt dt
C
dC
V
dt dt
= =
= +
19
( )
2
2 2
2 2 2
2
2
j j j
j j j
j
dq d
i C V
dt dt
C dV dC
V
dt dt
= =
= +
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Methods of Thyristor Turn-on
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
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Thyristor Ratings
First
Subscript
Second
Subscript
Third
Subscript
D off state W working M Peak Value
T ON state R Repetitive
F Forward S Surge or
non-repetitive
R Reverse
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Voltage Ratings
DWM DRM DSM
RWM RRM RSM
T
V V V
V V V
dv
V
dt
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Current Ratings
Taverage TRMS L
H
I I I
di
I
dt
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Gate Specification
gt gt
gD RR
thjc
I V
V Q
R
Diodes
Diode Product Range

Phase Control Thyristors
Fast switching Thyristors
28
Thyristor Types
Phase-control Thyristors (SCRs).
Fast-switching Thyristors (SCRs).
Gate-turn-off Thyristors (GTOs).
Bidirectional triode Thyristors (TRIACs).
Reverse-conducting Thyristors (RCTs).
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Static induction Thyristors (SITHs).
Light-activated silicon-controlled rectifiers
(LASCRs).
FET controlled Thyristors (FET-CTHs).
MOS controlled Thyristors (MCTs).

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Phase Control Thyristor
These are converter thyristors.
The turn-off time t
q
is in the order of 50 to
100sec.
Used for low switching frequency.
Commutation is natural commutation
On state voltage drop is 1.15V for a 600V
device.
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They use amplifying gate thyristor.
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Fast Switching Thyristors
Also called inverter thyristors.
Used for high speed switching
applications.
Turn-off time t
q
in the range of 5 to
50sec.
On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
High dv/dt and high di/dt rating.
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Bidirectional Triode
Thyristors (TRIAC)
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Triac Characteristics
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Gate Turn-off Thyristors
Turned on by applying positive gate
signal.
Turned off by applying negative gate
signal.
On state voltage is 3.4V for 550A, 1200V
GTO.
Controllable peak on-state current I
TGQ
is
the peak value of on-state current which
can be turned-off by gate control.
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Advantages over SCRs
Elimination of commutating components.
Reduction in acoustic & electromagnetic
noise due to elimination of chokes.
Faster turn-off, therefore can be used for
higher switching frequencies.
Improved efficiency of converters.

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Advantages over BJTs
Higher voltage blocking capabilities.
High on-state gain.
High ratio of peak surge current to
average current.
A pulsed gate signal of short duration only
is required.
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Disadvantages of GTOs
On-state voltage drop is more.
Due to multi cathode structure higher gate
current is required.
Gate drive circuit losses are more.
Reverse blocking capability is less than its
forward blocking capability.
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Reverse Conducting
Thyristors
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Anti-parallel diode connected across SCR
on the same silicon chip.
This diode clamps the reverse blocking
voltage to 1 or 2V.
RCT also called Asymmetrical Thyristor
(ASCR).
Limited applications.
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Static Induction Thyristors
Turned-on by applying positive gate
voltage.
Turned-off by applying negative gate
voltage.
Minority carrier device.
Low on-state resistance & low voltage
drop.
Fast switching speeds & high dv/dt & high
di/dt capabilities.
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Switching time in order of 1 to 6 sec.
The rating can go upto 2500V / 500A.
Process sensitive.
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Light-Activated Silicon
Controlled Rectifiers
Turned-on by direct light radiation on
silicon wafer.
Gate structure is sensitive for triggering
from practical light sources.
Used in high voltage and high current
applications. Example: HVDC transmission,
Static reactive power compensation.
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Offers complete electrical isolation
between light triggering source & power
circuit.
Rating could be has high as 4KV / 1500A.
di/dt rating is 250A / sec.
dv/dt rating is 2000V / sec.

45
FET Controlled
Thyristors
Combines a
MOSFET & a
thyristor in parallel
as shown.
High switching
speeds & high di/dt
& dv/dt.
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Turned on like conventional thyristors.
Cannot be turned off by gate control.
Application of these are where optical
firing is to be used.
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MOS-Controlled
Thyristor
New device that has become commercially
available.
Basically a thyristor with two MOSFETs
built in the gate structure.
One MOSFET for turning ON the MCT and
the other to turn OFF the MCT.
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Structure
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Equivalent Circuit
ON-FET
OFF-FET
Anode
Gate (G)
Cathode
D
n
+
n
n
n
p
p
+
Q2
Q1
p
-
n
+
p
-
M1
S
D
S
M2
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Features
Low on-state losses & large current
capabilities.
Low switching losses.
High switching speeds achieved due to
fast turn-on & turn-off.
Low reverse blocking capability.

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Gate controlled possible if current is less
than peak controllable current.
Gate pulse width not critical for smaller
device currents.
Gate pulse width critical for turn-off for
larger currents.
MOSFET
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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Semiconductor Cross-section of
IGBT
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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
IGBT
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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Advantages of IGBT
Combines the advantages of BJT & MOSFET
High input impedance like MOSFET
Voltage controlled device like MOSFET
Simple gate drive, Lower switching loss
Low on state conduction power loss like BJT
Higher current capability & higher switching
speed than a BJT. ( Switching speed lower than
MOSFET)


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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Applications of IGBT
ac and dc motor controls.
General purpose inverters.
Uninterrupted Power Supply (UPS).
Welding Equipments.
Numerical control, Cutting tools.
Robotics & Induction heating.
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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
Devices
SITH = Static Induction Thyristor
GTO = Gate Turn Off Thyristor
MOS = Metal Oxide Semiconductor
MCT = MOS Controlled Thyristor
MTO = MOS Turn Off Thyristor
ETO = Emitter Turn Off Thyristor
IGCT = Insulated Gate Controlled Thyristor
TRIAC = Triode Thyristor
LASCR = Light Activated SCR
Devices..
NPN BJT = NPN Bipolar Junction
Transistor
IGBT = Insulated Gate Bipolar Junction
Transistor
N-Channel MOSFET = N-Channel Metal
Oxide Silicon Field Effect Transistor
SIT = Static Induction Transistor
RCT = Reverse Conducting Thyristor
GATT = Gate Assisted Turn Off Thyristor
Power Semiconductor Devices,
their Symbols & Characteristics

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DEVICE SYMBOLS &
CHARACTERISTICS
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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
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Comparison between different
commonly used Thyristors
Line Commutated Thyristors available up to
6000V, 4500A.
Ex: Converter grade (line commutated) SCR.
V / I rating: 5KV / 5000A
Max. Frequency: 60Hz.
Switching time: 100 to 400sec.
On state resistance: 0.45mO.
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Example of Inverter Grade
Thyristor Ratings
V / I rating: 4500V / 3000A.
Max. Frequency: 20KHz.
Switching time: 20 to 100sec.
On state resistance: 0.5mO.
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Example of Triac Ratings
Used in heat / light control, ac motor
control circuit
V / I rating: 1200V / 300A.
Max. Frequency: 400Hz.
Switching time: 200 to 400sec.
On state resistance: 3.6mO.
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Example of Power Transistor
Ratings
PT ratings go up to 1200V / 400A.
PT normally operated as a switch in CE
config.
Max. Frequency: 400Hz.
Switching time: 200 to 400sec.
On state resistance: 3.6mO.
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Example of Power MOSFET
Ratings
Used in high speed power converters like
inverters & choppers.
Ratings up to 1000V / 100A.
Example: MOSFET 800V / 7.5A rating.
Max. Frequency: 100KHz.
Switching time: 1.6sec.
On state resistance: 1.2mO.
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Example of IGBT Ratings
Used in high voltage / current & high frequency
switching power applications (Inverters, SMPS).
Example: IGBT 2500V / 2400A.
Max. Frequency: 20KHz.
Switching time: 5 to sec.
On state resistance: 2.3mO.
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IGM w
IG
r p
o
n
s
x
q
y
z
1
3
4Load line
m
VG
VGD
FIGURE 18.2 Typical gate characteristics of an SCR.

Photo-SCR coupled isolator
Short pulse
Long pulse
Pulse train generator
Pulse train with timer
and AND gate
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Gate Triggering Methods
- Efficient & reliable method for turning on
SCR.
Types
R - Triggering.
RC - Triggering.
UJT - Triggering.

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R-Triggering






Resistance firing circuit
LOAD
v
O
a
b
i
R
1
R
2
D
R V
g
V
T
v =V sin t
S m
e
77
RC Triggering







RC half-wave trigger circuit
LOAD
v
O
R
C
V
T
v =V sin t
S m
e
D
2
V
C
+
-
D
1
Gate triggering characteristics
Gate protection circuit
Gate input characteristics
High temperature due to:
Snubber
Trajectory comparision
with and without capacitor
Turn off snubber circuit