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CMOS Logic Gates Overview

The document discusses CMOS logic circuits such as inverters, NOR gates, and NAND gates. It describes their circuit designs using n-type and p-type MOSFET transistors arranged in complementary configurations. Specifically, it explains how a 2-input NOR gate is constructed using two p-channel transistors in series and two n-channel transistors in parallel. A 2-input NAND gate uses two p-channel transistors in parallel and two n-channel transistors in series. Buffered NAND and NOR gates add inverters to the output for more consistent signal behavior.

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Kumar Amit Verma
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0% found this document useful (0 votes)
836 views23 pages

CMOS Logic Gates Overview

The document discusses CMOS logic circuits such as inverters, NOR gates, and NAND gates. It describes their circuit designs using n-type and p-type MOSFET transistors arranged in complementary configurations. Specifically, it explains how a 2-input NOR gate is constructed using two p-channel transistors in series and two n-channel transistors in parallel. A 2-input NAND gate uses two p-channel transistors in parallel and two n-channel transistors in series. Buffered NAND and NOR gates add inverters to the output for more consistent signal behavior.

Uploaded by

Kumar Amit Verma
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd

CMOS Logic Circuits

Inverter 2 Input NOR 2 Input NAND Other functions

The CMOS Inverter


Vdd = 5V

Tpu (pMOS)
Vin

Vout

Tpd (nMOS)

DC Operation
Voltage Transfer Characteristics (VTC)

Plot of output voltage as a function of the input voltage


V(y)
f V(y)=V(x)

V(x)

V(y)

VOH = f (VIL)

VM VOL = f (VIH) VIL

Switching Threshold

VIH

V(x)

Mapping Logic Levels to the Voltage Domain

The regions of acceptable high and low voltages are delimited by VIH and VIL that represent the points on the VTC curve where the gain = -1

"1"

VOH

V(y) VOH Slope = -1

VIH
Undefined Region VIL "0" VOL

Slope = -1 VOL VIL VIH V(x)

Fan-In and Fan-Out

Fan-out number of load gates connected to the output of the driving gate

gates with large fan-out are slower


N

Fan-in the number of inputs to the gate

gates with large fan-in are bigger and slower

The Ideal Inverter

The ideal gate should have


infinite gain in the transition region a gate threshold located in the middle of the logic swing high and low noise margins equal to half the swing input and output impedances of infinity and zero, resp.
Vout Ri = Ro = 0 g=-

Fanout =
NMH = NML = VDD/2 Vin

CMOS integrated circuits are built around using two kinds of Field Effect Transistors (FET), n-type & p-type.
n-FET
gate

CMOS Logic Gates


p-FET

the gate input controls whether current can flow between the other two terminals or not.

Logic gates are constructed by combining transistors in complementary arrangements.


NAND A NOR transmission gate B A

inverter

(AB)
B

(A+B )
TG

Electronic gates are physical devices X Y Z that take time to operate. Response to instantaneous change at X X is gradual decrease in voltage at Y Y and similar gradual increase at Z. Z Voltage at Y must drop below logic threshold level to be seen as a 0. This effect can be viewed as delay in propagation of logic values.
tPLH denotes low-to-high delay tPHL denotes high-to-low delay

Circuit Delays in CMOS Circuits

tpd= max{tPLH, tPHL} relative values of tPLH and tPHL depend on relative strength of pull-up and pull-down transistors in inverters values vary with operating temperature and manufacturing processes

Closer Look at CMOS Circuit Delays


X Y

equivalent circuit when X is low Y Z

When X goes high, pull-up of first inverter turns off and pull-down turns on.
equivalent circuit when X is high X Y Z

Decrease of voltage at Y requires transfer of charge from capacitor to ground. wires and transistor gates act like capacitors time for transfer depends on size of capacitance and on resistance of pull-down transistor pull-up & pull-down transistors can have different on-state resistance values Use of two parallel inverters between X and Y can give faster logic transitions.

Circuit: The CMOS Inverter


VDD

Vin CL

Vout

CMOS Inverter - Operation


Since the gate is essentially an open circuit it draws no current, and the output voltage will be equal to either ground or to the power supply voltage, depending on which transistor is conducting. When input A is grounded (logic 0), the N-channel MOSFET is unbiased, and therefore has no channel enhanced within itself. It is an open circuit, and therefore leaves the output line disconnected from ground. At the same time, the P-channel MOSFET is forward biased, so it has a channel enhanced within itself, connecting the output line to the +Vsupply. This pulls the output up to +V (logic 1). When input A is at +V (logic 1), the P-channel MOSFET is off and the N-channel MOSFET is on, thus pulling the output down to ground (logic 0). Thus, this circuit correctly performs logic inversion, and at the same time provides active pull-up and pull-down, according to the output state.

The CMOS Inverter (mask layout) & SPICE simulation


In

Out Time

In

0.25m typical delay 50ps

CMOS Inverter (Recall)

Inverter Layout
Using Microwind

CMOS 2-Input NOR +V

A
B

Y=A+B

CMOS 2-Input NOR - Operation


This basic CMOS inverter can be expanded into NOR and NAND structures by combining inverters in a partially series, partially parallel structure. A practical example of a CMOS 2input NOR gate is shown in the figure. In this circuit, if both inputs are low, both P-channel MOSFETs will be turned on, thus providing a connection to +V. Both Nchannel MOSFETs will be off, so there will be no ground connection. However, if either input goes high, that P-channel MOSFET will turn off and disconnect the output from +V, while that N-channel MOSFET will turn on, thus grounding the output. Note the two p-channel FETs in series.

CMOS 2-Input NAND


+V +V

A
B Y=AB

2-Input NAND
p A p B n out

If both inputs 1, both p-channel are off, both n-channel are on, out is negative; otherwise at least one p-channel is on and one n-channel off, and out is positive

CMOS 2-Input NAND - Operation


A two-input NAND gate: a logic 0 at either input will force the output to logic 1; both inputs at logic 1 will force the output to go to logic 0. Note the two n-channel FETs in series and the two p-channel FETs in parallel. The pull-up and pull-down resistances at the output are never the same, and can change significantly as the inputs change state, even if the output does not change logic states. The result is uneven and unpredictable rise and fall times for the output signal. This problem was addressed, and was solved with the buffered, or B-series CMOS gates.

CMOS 2-Input NAND: Buffered +V


+V

Y=AB

CMOS 2-Input NAND: Buffered


The technique here is to follow the actual NAND gate with a pair of inverters. Thus, the output will always be driven by a single transistor, either P-channel or N-channel. Since they are as closely matched as possible, the output resistance of the gate will always be the same, and signal behavior is therefore more predictable. Typically, the pchannel transistor is approximately twice as wide as the n-channel transistor, because of the difference in conductivity between electronics and holes.

Note that we have not gone into all of the details of CMOS gate construction here. For example, to avoid damage caused by static electricity, different manufacturers developed a number of input protection circuits, to prevent input voltages from becoming too high. However, these protection circuits do not affect the logical behavior of the gates, so we will not go into the details here. This is not strictly true for most CMOS devices for applications that are power-switched; special inputs are required for power-off isolation between circuits.

CMOS 2-Input XOR

Layout of 2 Input XOR Using Microwind

CMOS mask set for Boolean function F=A.B + C.D

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